Next Article in Journal / Special Issue
Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits
Previous Article in Journal
Nanohardness and Residual Stress in TiN Coatings
Previous Article in Special Issue
Magnetic Nanoparticles Embedded in a Silicon Matrix
Article Menu

Export Article

Open AccessArticle
Materials 2011, 4(5), 941-951;

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

Institut für Solarenergie Forschung Hameln (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
Current address: Department of Physics, University of Konstanz, Jacob-Burckhardt-Strasse 29, 78464 Konstanz, Germany.
Author to whom correspondence should be addressed.
Received: 20 April 2011 / Accepted: 19 May 2011 / Published: 23 May 2011
(This article belongs to the Special Issue Porous Materials 2011)
Full-Text   |   PDF [331 KB, uploaded 23 May 2011]   |  


We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etching process uses an aqueous HF-rich HF/HNO3 solution. The porosity increases with increasing doping concentration of the Si substrate wafer and with increasing porous layer thickness. In contrast to the electrochemically etched double layers, the porosity profile of the stain etched substrates is highest at the original wafer surface and lowest at the interface between the porous layer and the Si bulk. The epitaxy process is adapted to the high porosity at the surface with regard to the reorganization of the porous layer. View Full-Text
Keywords: layer transfer process; porous silicon; stain etching layer transfer process; porous silicon; stain etching

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Share & Cite This Article

MDPI and ACS Style

Terheiden, B.; Hensen, J.; Wolf, A.; Horbelt, R.; Plagwitz, H.; Brendel, R. Layer Transfer from Chemically Etched 150 mm Porous Si Substrates. Materials 2011, 4, 941-951.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top