Heo, S.; Choi, S.; Lee, S.; Cho, Y.; Bae, J.-H.; Kang, I.-M.; Kim, K.; Lee, W.-Y.; Jang, J.
Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives. Materials 2024, 17, 5252.
https://doi.org/10.3390/ma17215252
AMA Style
Heo S, Choi S, Lee S, Cho Y, Bae J-H, Kang I-M, Kim K, Lee W-Y, Jang J.
Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives. Materials. 2024; 17(21):5252.
https://doi.org/10.3390/ma17215252
Chicago/Turabian Style
Heo, Seongwon, Soohyun Choi, Sangwoo Lee, Yoonjin Cho, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Won-Yong Lee, and Jaewon Jang.
2024. "Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives" Materials 17, no. 21: 5252.
https://doi.org/10.3390/ma17215252
APA Style
Heo, S., Choi, S., Lee, S., Cho, Y., Bae, J.-H., Kang, I.-M., Kim, K., Lee, W.-Y., & Jang, J.
(2024). Improving the Nonvolatile Memory Characteristics of Sol–Gel-Processed Y2O3 RRAM Devices Using Mono-Ethanolamine Additives. Materials, 17(21), 5252.
https://doi.org/10.3390/ma17215252