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Journal: MaterialsVolume: 17Number: 3343
Article: Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
- Authors:
- Nerijus Armakavicius1,2,*,
- Philipp Kühne1,2 and
- Alexis Papamichail1,2
- et al.
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