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Journal: MaterialsVolume: 16Number: 4381
Article: Carrier Trap Density Reduction at SiO2/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres
  • Authors:
  • Ernest Brzozowski1,
  • Maciej Kaminski1,2 and
  • Andrzej Taube1
  • et al.
Link: https://www.mdpi.com/1996-1944/16/12/4381

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