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Journal: Materials, 2023
Volume: 16
Number: 4381
4381
Article: Carrier Trap Density Reduction at SiO₂/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres
Authors: by Ernest Brzozowski, Maciej Kaminski, Andrzej Taube, Oskar Sadowski, Krystian Krol and Marek Guziewicz
Link: https://www.mdpi.com/1996-1944/16/12/4381

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