Lo Nigro, R.; Fiorenza, P.; Greco, G.; Schilirò, E.; Roccaforte, F.
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. Materials 2022, 15, 830.
https://doi.org/10.3390/ma15030830
AMA Style
Lo Nigro R, Fiorenza P, Greco G, Schilirò E, Roccaforte F.
Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. Materials. 2022; 15(3):830.
https://doi.org/10.3390/ma15030830
Chicago/Turabian Style
Lo Nigro, Raffaella, Patrick Fiorenza, Giuseppe Greco, Emanuela Schilirò, and Fabrizio Roccaforte.
2022. "Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices" Materials 15, no. 3: 830.
https://doi.org/10.3390/ma15030830
APA Style
Lo Nigro, R., Fiorenza, P., Greco, G., Schilirò, E., & Roccaforte, F.
(2022). Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices. Materials, 15(3), 830.
https://doi.org/10.3390/ma15030830