Article Versions Notes

Lebedev AA, Kozlovski VV, Davydovskaya KS, Kuzmin RA, Levinshtein ME, Strel’chuk AM. Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide. Materials. 2022; 15(23):8637. https://doi.org/10.3390/ma15238637

Lebedev, Alexander A., Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, and Anatolii M. Strel’chuk. 2022. "Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide" Materials 15, no. 23: 8637. https://doi.org/10.3390/ma15238637

Lebedev, A. A., Kozlovski, V. V., Davydovskaya, K. S., Kuzmin, R. A., Levinshtein, M. E., & Strel’chuk, A. M. (2022). Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide. Materials, 15(23), 8637. https://doi.org/10.3390/ma15238637