Lebedev, A.A.; Kozlovski, V.V.; Davydovskaya, K.S.; Kuzmin, R.A.; Levinshtein, M.E.; Strel’chuk, A.M.
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide. Materials 2022, 15, 8637.
https://doi.org/10.3390/ma15238637
AMA Style
Lebedev AA, Kozlovski VV, Davydovskaya KS, Kuzmin RA, Levinshtein ME, Strel’chuk AM.
Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide. Materials. 2022; 15(23):8637.
https://doi.org/10.3390/ma15238637
Chicago/Turabian Style
Lebedev, Alexander A., Vitali V. Kozlovski, Klavdia S. Davydovskaya, Roman A. Kuzmin, Mikhail E. Levinshtein, and Anatolii M. Strel’chuk.
2022. "Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide" Materials 15, no. 23: 8637.
https://doi.org/10.3390/ma15238637
APA Style
Lebedev, A. A., Kozlovski, V. V., Davydovskaya, K. S., Kuzmin, R. A., Levinshtein, M. E., & Strel’chuk, A. M.
(2022). Features of the Carrier Concentration Determination during Irradiation of Wide-Gap Semiconductors: The Case Study of Silicon Carbide. Materials, 15(23), 8637.
https://doi.org/10.3390/ma15238637