Zhu, S.; Liu, T.; Fan, J.; Salemi, A.; White, M.H.; Sheridan, D.; Agarwal, A.K.
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching. Materials 2022, 15, 6690.
https://doi.org/10.3390/ma15196690
AMA Style
Zhu S, Liu T, Fan J, Salemi A, White MH, Sheridan D, Agarwal AK.
A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching. Materials. 2022; 15(19):6690.
https://doi.org/10.3390/ma15196690
Chicago/Turabian Style
Zhu, Shengnan, Tianshi Liu, Junchong Fan, Arash Salemi, Marvin H. White, David Sheridan, and Anant K. Agarwal.
2022. "A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching" Materials 15, no. 19: 6690.
https://doi.org/10.3390/ma15196690
APA Style
Zhu, S., Liu, T., Fan, J., Salemi, A., White, M. H., Sheridan, D., & Agarwal, A. K.
(2022). A New Cell Topology for 4H-SiC Planar Power MOSFETs for High-Frequency Switching. Materials, 15(19), 6690.
https://doi.org/10.3390/ma15196690