He, S.; Wang, Y.; Chen, G.; Wang, J.; Li, Q.; Zhang, Q.; Wang, R.; Zhang, M.; Wang, W.; Wang, H.
Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. Materials 2022, 15, 5082.
https://doi.org/10.3390/ma15145082
AMA Style
He S, Wang Y, Chen G, Wang J, Li Q, Zhang Q, Wang R, Zhang M, Wang W, Wang H.
Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. Materials. 2022; 15(14):5082.
https://doi.org/10.3390/ma15145082
Chicago/Turabian Style
He, Shi, Yanfeng Wang, Genqiang Chen, Juan Wang, Qi Li, Qianwen Zhang, Ruozheng Wang, Minghui Zhang, Wei Wang, and Hongxing Wang.
2022. "Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn" Materials 15, no. 14: 5082.
https://doi.org/10.3390/ma15145082
APA Style
He, S., Wang, Y., Chen, G., Wang, J., Li, Q., Zhang, Q., Wang, R., Zhang, M., Wang, W., & Wang, H.
(2022). Normally-off Hydrogen-Terminated Diamond Field-Effect Transistor with SnOx Dielectric Layer Formed by Thermal Oxidation of Sn. Materials, 15(14), 5082.
https://doi.org/10.3390/ma15145082