Mols, Y.; Vais, A.; Yadav, S.; Witters, L.; Vondkar, K.; Alcotte, R.; Baryshnikova, M.; Boccardi, G.; Waldron, N.; Parvais, B.;
et al. Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate. Materials 2021, 14, 5682.
https://doi.org/10.3390/ma14195682
AMA Style
Mols Y, Vais A, Yadav S, Witters L, Vondkar K, Alcotte R, Baryshnikova M, Boccardi G, Waldron N, Parvais B,
et al. Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate. Materials. 2021; 14(19):5682.
https://doi.org/10.3390/ma14195682
Chicago/Turabian Style
Mols, Yves, Abhitosh Vais, Sachin Yadav, Liesbeth Witters, Komal Vondkar, Reynald Alcotte, Marina Baryshnikova, Guillaume Boccardi, Niamh Waldron, Bertrand Parvais,
and et al. 2021. "Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate" Materials 14, no. 19: 5682.
https://doi.org/10.3390/ma14195682
APA Style
Mols, Y., Vais, A., Yadav, S., Witters, L., Vondkar, K., Alcotte, R., Baryshnikova, M., Boccardi, G., Waldron, N., Parvais, B., Collaert, N., Langer, R., & Kunert, B.
(2021). Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate. Materials, 14(19), 5682.
https://doi.org/10.3390/ma14195682