Glemža, J.; Palenskis, V.; Geižutis, A.; Čechavičius, B.; Butkutė, R.; Pralgauskaitė, S.; Matukas, J.
Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes. Materials 2019, 12, 673.
https://doi.org/10.3390/ma12040673
AMA Style
Glemža J, Palenskis V, Geižutis A, Čechavičius B, Butkutė R, Pralgauskaitė S, Matukas J.
Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes. Materials. 2019; 12(4):673.
https://doi.org/10.3390/ma12040673
Chicago/Turabian Style
Glemža, Justinas, Vilius Palenskis, Andrejus Geižutis, Bronislovas Čechavičius, Renata Butkutė, Sandra Pralgauskaitė, and Jonas Matukas.
2019. "Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes" Materials 12, no. 4: 673.
https://doi.org/10.3390/ma12040673
APA Style
Glemža, J., Palenskis, V., Geižutis, A., Čechavičius, B., Butkutė, R., Pralgauskaitė, S., & Matukas, J.
(2019). Low-Frequency Noise Investigation of 1.09 μm GaAsBi Laser Diodes. Materials, 12(4), 673.
https://doi.org/10.3390/ma12040673