Spera, M.; Greco, G.; Corso, D.; Di Franco, S.; Severino, A.; Messina, A.A.; Giannazzo, F.; Roccaforte, F.
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings. Materials 2019, 12, 3468.
https://doi.org/10.3390/ma12213468
AMA Style
Spera M, Greco G, Corso D, Di Franco S, Severino A, Messina AA, Giannazzo F, Roccaforte F.
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings. Materials. 2019; 12(21):3468.
https://doi.org/10.3390/ma12213468
Chicago/Turabian Style
Spera, Monia, Giuseppe Greco, Domenico Corso, Salvatore Di Franco, Andrea Severino, Angelo Alberto Messina, Filippo Giannazzo, and Fabrizio Roccaforte.
2019. "Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings" Materials 12, no. 21: 3468.
https://doi.org/10.3390/ma12213468
APA Style
Spera, M., Greco, G., Corso, D., Di Franco, S., Severino, A., Messina, A. A., Giannazzo, F., & Roccaforte, F.
(2019). Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings. Materials, 12(21), 3468.
https://doi.org/10.3390/ma12213468