High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi3
Max-Planck-Institut für Chemische Physik fester Stoffe, Nöthnitzer Straße 40, 01187 Dresden, Germany
Author to whom correspondence should be addressed.
Received: 30 November 2018 / Revised: 22 December 2018 / Accepted: 26 December 2018 / Published: 4 January 2019
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is obtained at pressures between 12(2) and 15(2) GPa and temperatures from 800(80) and 1050(105) K applied for one to five hours before quenching. The new trisilicide crystallizes in the space group I 2m
(no. 121) and adopts a unique atomic arrangement which is a distorted variant of the CaGe3
type. At ambient pressure and 570(5) K, the compound decomposes in an exothermal reaction into (hP3
and two amorphous silicon-rich phases. Chemical bonding analysis reveals covalent bonding in the silicon partial structure and polar multicenter interactions between the silicon layers and the barium atoms. The temperature dependence of electrical resistivity and magnetic susceptibility measurements indicate metallic behavior.
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Hübner, J.-M.; Akselrud, L.; Schnelle, W.; Burkhardt, U.; Bobnar, M.; Prots, Y.; Grin, Y.; Schwarz, U. High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi3. Materials 2019, 12, 145.
Hübner J-M, Akselrud L, Schnelle W, Burkhardt U, Bobnar M, Prots Y, Grin Y, Schwarz U. High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi3. Materials. 2019; 12(1):145.
Hübner, Julia-Maria; Akselrud, Lev; Schnelle, Walter; Burkhardt, Ulrich; Bobnar, Matej; Prots, Yurii; Grin, Yuri; Schwarz, Ulrich. 2019. "High-Pressure Synthesis and Chemical Bonding of Barium Trisilicide BaSi3." Materials 12, no. 1: 145.
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