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Open AccessArticle

Giant Zero-Drift Electronic Behaviors in Methylammonium Lead Halide Perovskite Diodes by Doping Iodine Ions

1
School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi’an 710071, China
2
Department of Microelectronic Science and Engineering, Ningbo University, Ningbo 315211, China
*
Authors to whom correspondence should be addressed.
Materials 2018, 11(9), 1606; https://doi.org/10.3390/ma11091606
Received: 6 August 2018 / Revised: 30 August 2018 / Accepted: 31 August 2018 / Published: 4 September 2018
(This article belongs to the Section Energy Materials)
Methylammonium lead halide perovskites have attracted extensive attention for optoelectronic applications. Carrier transport in perovskites is obscured by vacancy-mediated ion migration, resulting in anomalous electronic behavior and deteriorated reliability of the devices. In this communication, we demonstrate that ion migration can be significantly enhanced by doping additional mobile I- ions into the perovskite bulk. Ionic confinement structures of vertical metal oxide semiconductor (MOS) and lateral metal semiconductor metal (MSM) diodes designed to decouple ion-migration/accumulation and electronic transport are fabricated and characterized. Measurement conditions (electric-field history, scan rate and sweep frequency) are shown to affect the electronic transport in perovskite films, through a mechanism involving ion migration and accumulation at the block interfaces. Prominent zero-point drifts of dark current-voltage curves in both vertical and lateral diode are presented, and further varied with the perovskite film containingthe different iodine-lead atomic ratio. The doped perovskite has a large ion current at grain boundaries, offering a large ion hysteresis loopand zero drift value. The results confirmthat the intrinsic behavior of perovskite film is responsible for the hysteresisof the optoelectronic devices, but also paves the way for potential applications in many types of devices including memristors and solid electrolyte batteries by doping the native species (I ions) in perovskite film. View Full-Text
Keywords: Methylammonium lead halide perovskite; iodine doped; zero-point drift Methylammonium lead halide perovskite; iodine doped; zero-point drift
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MDPI and ACS Style

Pang, T.; Jia, R.; Wang, Y.; Sun, K.; Hu, Z.; Zhu, Y.; Luan, S.; Zhang, Y. Giant Zero-Drift Electronic Behaviors in Methylammonium Lead Halide Perovskite Diodes by Doping Iodine Ions. Materials 2018, 11, 1606.

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