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Journal: Materials, 2018
Volume: 11
Number: 43
43
Article: Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
Authors: by Kai-Huang Chen, Tsung-Ming Tsai, Chien-Min Cheng, Shou-Jen Huang, Kuan-Chang Chang, Shu-Ping Liang and Tai-Fa Young
Link: https://www.mdpi.com/1996-1944/11/1/43

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