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Journal: Materials, 2018
Volume: 11
Number: 43
Article:
Schottky Emission Distance and Barrier Height Properties of Bipolar Switching Gd:SiOx RRAM Devices under Different Oxygen Concentration Environments
Authors:
by
Kai-Huang Chen, Tsung-Ming Tsai, Chien-Min Cheng, Shou-Jen Huang, Kuan-Chang Chang, Shu-Ping Liang and Tai-Fa Young
Link:
https://www.mdpi.com/1996-1944/11/1/43
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