Next Article in Journal
Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms
Next Article in Special Issue
Two B-C-O Compounds: Structural, Mechanical Anisotropy and Electronic Properties under Pressure
Previous Article in Journal
A Rapid One-Step Process for Fabrication of Biomimetic Superhydrophobic Surfaces by Pulse Electrodeposition
Previous Article in Special Issue
On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes
Open AccessReview

A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
*
Author to whom correspondence should be addressed.
Materials 2017, 10(11), 1233; https://doi.org/10.3390/ma10111233
Received: 1 October 2017 / Revised: 22 October 2017 / Accepted: 24 October 2017 / Published: 26 October 2017
(This article belongs to the Special Issue Wide Bandgap Semiconductors: Growth, Properties and Applications)
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed. View Full-Text
Keywords: light-emitting diodes (LEDs); efficiency droop; GaN; InGaN; multiple quantum wells (MQWs); carrier lifetime light-emitting diodes (LEDs); efficiency droop; GaN; InGaN; multiple quantum wells (MQWs); carrier lifetime
Show Figures

Figure 1

MDPI and ACS Style

Wang, L.; Jin, J.; Mi, C.; Hao, Z.; Luo, Y.; Sun, C.; Han, Y.; Xiong, B.; Wang, J.; Li, H. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes. Materials 2017, 10, 1233.

Show more citation formats Show less citations formats
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Article Access Map by Country/Region

1
Back to TopTop