Huang, Z.; Yan, W.; Li, Z.; Dong, H.; Yang, F.; Wang, X.
High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas. Sensors 2022, 22, 933.
https://doi.org/10.3390/s22030933
AMA Style
Huang Z, Yan W, Li Z, Dong H, Yang F, Wang X.
High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas. Sensors. 2022; 22(3):933.
https://doi.org/10.3390/s22030933
Chicago/Turabian Style
Huang, Zhen, Wei Yan, Zhaofeng Li, Hui Dong, Fuhua Yang, and Xiaodong Wang.
2022. "High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas" Sensors 22, no. 3: 933.
https://doi.org/10.3390/s22030933
APA Style
Huang, Z., Yan, W., Li, Z., Dong, H., Yang, F., & Wang, X.
(2022). High-Responsivity, Low-Leakage Current, Ultra-Fast Terahertz Detectors Based on a GaN High-Electron-Mobility Transistor with Integrated Bowtie Antennas. Sensors, 22(3), 933.
https://doi.org/10.3390/s22030933