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Open AccessFeature PaperArticle

A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel

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Brillnics Japan Inc., 6-21-12 Minami-Oi, Shinagawa-ku, Tokyo 140-0013; Japan
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Brillnics Inc., Guangming 6th Rd., Zhubei City, Hsinchu County 302, Taiwan
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Author to whom correspondence should be addressed.
This paper is the expanded version of our published paper: Mori, K.; Otaka, T.; Isozaki, T.; Yasuda, N.; Akutsu, T.; Miyauchi, K.; Tsai, A.; Sawai, Y.; Tanaka, S.; Takayanagi, I.; et al. Back Side Illuminated High Dynamic Range 4.0 μm Voltage Domain Global Shutter Pixel with Multiple Gain Readout. In Proceedings of the 2019 International Image Sensor Workshop, Snowbird, UT, USA, 23–27 June 2019.
Sensors 2020, 20(2), 486; https://doi.org/10.3390/s20020486
Received: 31 October 2019 / Revised: 10 December 2019 / Accepted: 13 January 2020 / Published: 15 January 2020
A backside-illuminated complementary metal-oxide-semiconductor (CMOS) image sensor with 4.0 μm voltage domain global shutter (GS) pixels has been fabricated in a 45 nm/65 nm stacked CMOS process as a proof-of-concept vehicle. The pixel components for the photon-to-voltage conversion are formed on the top substrate (the first layer). Each voltage signal from the first layer pixel is stored in the sample-and-hold capacitors on the bottom substrate (the second layer) via micro-bump interconnection to achieve a voltage domain GS function. The two sets of voltage domain storage capacitor per pixel enable a multiple gain readout to realize single exposure high dynamic range (SEHDR) in the GS operation. As a result, an 80dB SEHDR GS operation without rolling shutter distortions and motion artifacts has been achieved. Additionally, less than −140dB parasitic light sensitivity, small noise floor, high sensitivity and good angular response have been achieved.
Keywords: CMOS image sensor; voltage domain global shutter; stacked sensor; back side illumination; high dynamic range; single exposure; multiple gain readout; high full well capacity; low noise; multiple exposure CMOS image sensor; voltage domain global shutter; stacked sensor; back side illumination; high dynamic range; single exposure; multiple gain readout; high full well capacity; low noise; multiple exposure
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Miyauchi, K.; Mori, K.; Otaka, T.; Isozaki, T.; Yasuda, N.; Tsai, A.; Sawai, Y.; Owada, H.; Takayanagi, I.; Nakamura, J. A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors 2020, 20, 486.

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