Order Article Reprints

Miyauchi K, Mori K, Otaka T, Isozaki T, Yasuda N, Tsai A, Sawai Y, Owada H, Takayanagi I, Nakamura J. A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors. 2020; 20(2):486. https://doi.org/10.3390/s20020486

Miyauchi, Ken, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, and Junichi Nakamura. 2020. "A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel" Sensors 20, no. 2: 486. https://doi.org/10.3390/s20020486

Miyauchi, K., Mori, K., Otaka, T., Isozaki, T., Yasuda, N., Tsai, A., Sawai, Y., Owada, H., Takayanagi, I., & Nakamura, J. (2020). A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors, 20(2), 486. https://doi.org/10.3390/s20020486