Miyauchi, K.; Mori, K.; Otaka, T.; Isozaki, T.; Yasuda, N.; Tsai, A.; Sawai, Y.; Owada, H.; Takayanagi, I.; Nakamura, J.
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors 2020, 20, 486.
https://doi.org/10.3390/s20020486
AMA Style
Miyauchi K, Mori K, Otaka T, Isozaki T, Yasuda N, Tsai A, Sawai Y, Owada H, Takayanagi I, Nakamura J.
A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors. 2020; 20(2):486.
https://doi.org/10.3390/s20020486
Chicago/Turabian Style
Miyauchi, Ken, Kazuya Mori, Toshinori Otaka, Toshiyuki Isozaki, Naoto Yasuda, Alex Tsai, Yusuke Sawai, Hideki Owada, Isao Takayanagi, and Junichi Nakamura.
2020. "A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel" Sensors 20, no. 2: 486.
https://doi.org/10.3390/s20020486
APA Style
Miyauchi, K., Mori, K., Otaka, T., Isozaki, T., Yasuda, N., Tsai, A., Sawai, Y., Owada, H., Takayanagi, I., & Nakamura, J.
(2020). A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel. Sensors, 20(2), 486.
https://doi.org/10.3390/s20020486