Sensing Properties of Oxidized Nanostructured Silicon Surface on Vaporized Molecules
Laboratory for Molecular Physics and Synthesis of New Materials, Ruđer Bošković Institute, Bijenička 54, 10000 Zagreb, Croatia
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Sensors 2019, 19(1), 119; https://doi.org/10.3390/s19010119
Received: 29 November 2018
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Revised: 23 December 2018
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Accepted: 28 December 2018
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Published: 1 January 2019
(This article belongs to the Special Issue Nanostructured Surfaces in Sensing Systems)
Porous silicon has been intensely studied for the past several decades and its applications were found in photovoltaics, biomedicine, and sensors. An important aspect for sensing devices is their long–term stability. One of the more prominent changes that occur with porous silicon as it is exposed to atmosphere is oxidation. In this work we study the influence of oxidation on the sensing properties of porous silicon. Porous silicon layers were prepared by electrochemical etching and oxidized in a tube furnace. We observed that electrical resistance of oxidized samples rises in response to the increasing ambient concentration of organic vapours and ammonia gas. Furthermore, we note the sensitivity is dependent on the oxygen treatment of the porous layer. This indicates that porous silicon has a potential use in sensing of organic vapours and ammonia gas when covered with an oxide layer.
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MDPI and ACS Style
Baran, N.; Gebavi, H.; Mikac, L.; Ristić, D.; Gotić, M.; Syed, K.A.; Ivanda, M. Sensing Properties of Oxidized Nanostructured Silicon Surface on Vaporized Molecules. Sensors 2019, 19, 119. https://doi.org/10.3390/s19010119
AMA Style
Baran N, Gebavi H, Mikac L, Ristić D, Gotić M, Syed KA, Ivanda M. Sensing Properties of Oxidized Nanostructured Silicon Surface on Vaporized Molecules. Sensors. 2019; 19(1):119. https://doi.org/10.3390/s19010119
Chicago/Turabian StyleBaran, Nikola, Hrvoje Gebavi, Lara Mikac, Davor Ristić, Marijan Gotić, Kamran A. Syed, and Mile Ivanda. 2019. "Sensing Properties of Oxidized Nanostructured Silicon Surface on Vaporized Molecules" Sensors 19, no. 1: 119. https://doi.org/10.3390/s19010119
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