Search Results (849)

Zinc oxide (ZnO) is currently one of the most significant wide-bandgap semiconductor materials, attracting extensive research across diverse fields including materials science, chemistry, physics, medicine, electronics, and power engineering. Its exceptional properties, such as high optical transparency, high electron mobility, chemical stability, and compatibility with low-cost fabrication techniques, have established ZnO as a versatile material with immense application potential. A critical application for ZnO is its role as a transparent conducting oxide (TCO) in modern optoelectronic and photovoltaic devices, as well as in sensors, transparent electronics, and spintronics. To meet the requirements of these advanced applications, precise control over the structural, optical, and electrical properties of ZnO thin films is essential. This is effectively achieved through the selection of specific synthesis methods and intentional modification techniques, such as doping. This review provides a comprehensive overview of the synthesis and modification of ZnO thin films, with a particular focus on how various dopants influence their fundamental characteristics. The work discusses a range of deposition techniques, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), sol–gel methods, spray pyrolysis, and other solution-based approaches. The novelty of this review lies in its comparative analysis of different doping strategies combined with various thin-film deposition techniques, highlighting how specific synthesis routes influence dopant incorporation and ultimately determine functional properties. Furthermore, recent advances in tailoring ZnO thin films are summarized, alongside the identification of key challenges and future research directions. Ultimately, this work aims to provide researchers with a systematic perspective on the synthesis–structure–property relationships in doped ZnO thin films to support the development of optimized materials for next-generation electronic and optoelectronic devices. This review, thus, serves as a comprehensive reference for researchers and engineers seeking to optimize the functionality of ZnO-based thin films for emerging technological applications. Full article

In this study, the indium (In) composition in amorphous indium gallium zinc oxide (a-IGZO) thin films was systematically varied from 33% to 84% using a sol–gel process. Subsequently, aluminum/IGZO/aluminum (Al/IGZO/Al) metal–semiconductor–metal (MSM) UV photodetectors were fabricated to investigate the influence of composition on the structural, optical, and photoelectric properties. The results indicate that all films maintain an amorphous structure despite the increasing In content, while the ratio of oxygen vacancies, O_vac/(M-O + O_vac), rises from 36% to 52%. Concurrently, the optical bandgap decreases from 2.92 eV to 2.32 eV. Under a bias of 20 V, the dark current increases from 2.11 × 10⁻⁹ A to 1.90 × 10⁻⁵ A as the In content rises. When illuminated by a 360 nm LED with a power density of 8.6 mW/cm², the device with 60% In exhibits a photocurrent-to-dark-current ratio of approximately 10⁴, a responsivity of 19.45 A/W, and a specific detectivity of 8.19 × 10¹² Jones. The response time and recovery time of this device are 39.8 s and 577.4 s, respectively. These findings reveal a competitive relationship between enhanced optical absorption and defect generation induced by In composition, providing valuable guidance for the performance optimization of a-IGZO UV photodetectors through compositional engineering. Full article

The study of wide-bandgap nanomaterials has gained considerable attention in recent years, especially in the case of semiconductor oxides that exhibit full or partial optical transparency in fundamental research and technological applications. These include optoelectronic devices, gas sensors and photovoltaic cells, among others. The activation or adjustment of optical and structural properties, especially the bandgap and the parameters of unit cell lattice, can be achieved by varying the dopant concentration during the synthesis of semiconductor thin films in these applications. In this context, copper oxide has emerged as a valuable material, owing to its thoroughly analyzed structural behavior and its broad potential across multiple technological fields. The present work focuses on the synthesis of zinc-doped copper oxide (Zn_xCu_1−xO) thin films on silicon and quartz substrates through ultrasonic spray pyrolysis. The effects of varying the zinc doping concentration (0.0, 5.0, 10.0 and 20.0 at. %) on the morphological, structural, and optical characteristics of the Zn_xCu_1−xO films were analyzed. Scanning electron microscopy (SEM) analysis indicated a gradual increase in nanoparticle size, rising from 221 nm for CuO to approximately 322 nm for the Zn_0.2Cu_0.8O samples as the zinc content increased. Structural characterization via X-ray diffraction (XRD) confirmed a monoclinic crystal arrangement belonging to the $C_{2h}^6$ (c2/c) space group. As the percentage of zinc increased, the XRD peaks shifted to lower angles, consequently increasing the volume and crystal lattice parameters of the Zn_xCu_1−xO structure; this finding was additionally supported by a redshift observed in the Raman analysis. The transmittance spectra of the films showed low transmittance between 40 and 44%. The optical bandgap of the Zn_xCu_1−xO thin films was estimated from the transmittance data by applying the Tauc plot method. A decrease in the band gap was observed at higher doping concentrations. It can be confirmed that no secondary phases are observed at a doping level of 20.0 at. % of zinc, indicating good solubility of zinc in CuO. The analysis and discussion of these findings are included throughout this work to elucidate the controversies noted in the literature. Full article

X-ray techniques provide powerful, non-destructive tools for structural characterization in semiconductor manufacturing and advanced packaging. Their strong penetration capability and sensitivity to multiple contrast mechanisms enable the investigation of lattice structure, strain, defects, interfaces, and elemental distribution across a wide range of length scales. As semiconductor devices evolve toward three-dimensional architectures and heterogeneous integration, there is an increasing demand for characterization approaches capable of probing complex, buried, and multi-scale structures in a consistent manner. In this review, we present a systematic overview of X-ray characterization techniques for advanced semiconductor systems, including diffraction-based methods, small-angle scattering, computed tomography, X-ray fluorescence, and spectroscopic approaches. These techniques are discussed in terms of the type of structural, morphological, and compositional information they provide, their applicable length scales, and their strengths and limitations in addressing key challenges such as thin films, high-aspect-ratio structures, buried interfaces, and full wafers. Particular attention is given to the complementary nature of different X-ray modalities and their roles in addressing practical metrology problems. The limitations associated with resolution, model dependence, and data interpretation are also outlined. Finally, emerging opportunities in laboratory X-ray sources, synchrotron-based methods, and integrated characterization strategies are briefly discussed. This review aims to provide a unified perspective for understanding and integrating X-ray techniques, offering insights into their roles in addressing the growing complexity of next-generation semiconductor devices. Full article

Perylene bisimide derivatives are typical n-type semiconductors as well as redox-active materials. However, it has been difficult to produce thin films by solution processes because of their low solubilities in organic solvents. Perylene bisimide derivatives bearing oligosiloxane moieties exhibit columnar phases over wide temperature ranges, including room temperature and high solubilities in organic solvents. The columnar phases are stabilized by nanosegregation between crystal-like one-dimensional π-stacks and liquid-like mantle consisting of oligosiloxane moieties. The electron mobility at room temperature exceeded 0.1 cm²V⁻¹s⁻¹ in the ordered columnar phases of perylene bisimide derivatives bearing four disiloxane chains. Uniaxially aligned thin films of the perylene bisimide derivatives bearing oligosiloxane moieties could be produced by a spin-coating method. The spin-coated films of the perylene bisimide derivatives bearing cyclotetrasiloxane rings could be insolubilized via in situ ring-opening polymerization by the exposure of the thin films to trifluoromethanesulfonic acid vapors. Uniaxially aligned thin films of perylene bisimide derivatives bearing an ethylene oxide chain as well as cyclotetrasiloxane rings could be doped in an aqueous solution of sodium dithionate, resulting in an anisotropic electrical conductivity. Polymerized thin films of perylene bisimide derivatives bearing a crown ether ring exhibited electrochromism in electrolyte solutions. These compounds formed 1:1 complexes with lithium triflate, exhibiting columnar phases at room temperature. The nanostructures of the complexes were stabilized by the electrostatic interaction between cationic crown-metal units and triflate anions. Full article

In the current work, the microstructural evolution and CO₂ sensing performance of tungsten trioxide (WO₃) thin films synthesized by reactive DC magnetron sputtering are investigated. Three specific thicknesses of 42, 66, and 131 nm were obtained and annealed at 500 °C, resulting in a stable monoclinic P2₁/n phase with a strong (200) preferred orientation. Gas sensing tests toward 10,000 ppm of CO₂ revealed that the 42 nm film achieves the highest sensitivity (92%) at an optimal operating temperature of 300 °C. Rietveld refinement and texture analysis (texture index, J) demonstrate that the superior performance of the thinnest film is driven by a synergy between its high surface porosity, a grain size comparable to the Debye length, and a high density of active sites on the (200) plane. While all films exhibit n-type semiconductor behavior, increasing thickness leads to microstructural densification and reduced texture, which hinders gas diffusion and operational stability. These findings establish thickness control as a critical parameter for engineering high-performance WO₃-based CO₂ sensors. Full article

Over the past two decades, organic semiconductors have attracted significant research interest due to their advantageous features, including low-cost fabrication, lightweight properties, and portability, for photonic device applications. In this study, nickel sulfide doped with cobalt $(\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o})$ nanocomposites were successfully synthesized via a wet-chemical processing technique and used as a dopant in the active layer of thin-film organic solar cells (TFOSCs). The poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) blend was used as the active layer in this investigation. The devices were fabricated with $\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o}$ nanocomposites at 1 wt%, 2 wt%, and 3 wt% in the active layer to determine the optimal dopant concentration. However, the experimental evidence clearly showed that the solar cell’s performance depends on the concentration of the $\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o}$ nanocomposites. As a result, the highest power conversion efficiency (PCE) recorded in this experimental work was 6.11% at a 1% doping concentration, compared with 2.48% for the pristine reference device under AM 1.5G illumination (100 mW/cm²) in ambient conditions. The optical and electrical properties of the active layers are found to be strongly influenced by the inclusion of $\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o}$ nanocomposites in the medium. However, the device doped with 1 wt% $\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o}$ nanocomposite exhibits the highest absorption intensity, consistent with the better performance observed in this study, which can be attributed to the localized surface plasmon resonance (LSPR) effect. The optical and morphological characteristics of the synthesized $\mathrm{N}\mathrm{i}\mathrm{S}/\mathrm{C}\mathrm{o}$ nanocomposites were comprehensively analyzed using high-resolution transmission electron microscopy (HRTEM), high-resolution scanning electron microscopy (HRSEM), and additional complementary techniques. Full article

In the current paper, the nonlinear absorption characteristics and laser modulation performance of the ternary anisotropic semiconductor material ZrGeTe₄ were successfully explored. The recovery time of the ZrGeTe₄-PVA thin film was measured to be 5.74 ps by the pump–probe technology. By employing ZrGeTe₄ as a saturable absorber, a passive mode-locked Yb-doped fiber laser was demonstrated for the first time. In the 1 µm mode-locked operation, the central wavelength was 1031.29 nm, the pulse repetition rate was 24.85 MHz, and the pulse width was 786.3 ps. In an Er-doped fiber laser operating at a wavelength of 1561.10 nm, the pulse width was as short as 1.26 ps with a repetition rate of 4.38 MHz. The results show that ZrGeTe₄ has excellent broadband nonlinear optical characteristics. Full article

Semiconductor quantum dots (QDs) are attractive materials for light-emitting devices, and the photoluminescence (PL) from QDs can be enhanced near a metal surface due to surface plasmon (SP) resonance. To integrate QDs into metal structures, QD/poly(methyl methacrylate) (PMMA) composite thin films are generally used. However, it has been reported that QDs tend to aggregate in the PMMA matrix. In this study, we fabricated two types of QD/polymer composite thin films with different degrees of QD aggregation by additionally using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-MA), which is known to prevent QD aggregation. Furthermore, these two types of films were fabricated on Ag films, with the distance between the Ag films and the QDs controlled by Al₂O₃ spacer layers, and the PL enhancement was compared between the two film types. Finally, we reveal that QD aggregation in the polymer matrix significantly affects the PL enhancement. Although the aggregation trends differed between PMMA and PMMA-co-MA, the results suggest a possible increase in the internal quantum efficiency (IQE) in both film types. Full article

Developing reliable processing routes for semiconductor thin films is essential for advancing photodetection technologies. The amine-thiol solvent system, in comparison with other liquid-phase synthesis methods, does not necessitate stepwise ion-exchange reactions. It is capable of obtaining the target semiconductor thin film by directly dissolving bulk powder followed by subsequent annealing. Although PbO can be dissolved in this solvent as a raw material to obtain PbS thin films, the structural evolution, optical properties, and photodetection performance of the films obtained via this solvent system still require further exploration. This solvent system was employed to prepare PbS thin films, and a comprehensive investigation was carried out on the evolution of their structure, morphology, and optical properties during preheating and annealing treatments. During preheating, the films exhibit directional ordering within the organic matrix, which converts into phase-pure PbS upon annealing. Based on the optimized films, interdigitated photodetectors and hybrid devices integrated with graphene transistors are fabricated. The resulting devices exhibit strong photoresponse and operational stability, demonstrating the viability of amine-thiol-processed PbS films for photodetection applications. Full article

Metal–organic chemical vapor deposition (MOCVD) is a crystal growth technique used to achieve high-purity thin films, especially III–V materials, for fabricating semiconductor devices. It allows for thickness tunability, controlled doping, and composition of epilayers. This review focuses on the principle of MOCVD, its historical background, and its applications in III–V semiconductor devices such as solar cells, high electron mobility transistors (HEMTs), light-emitting diodes (LEDs), laser diodes (LDs), and photonic integrated circuits (PICs). This review highlights the recent developments in MOCVD aimed at improving its efficiency, performance, and sustainability. Finally, we emphasize emerging trends and challenges in MOCVD process innovation, reactor design, and material integration that are poised to drive the development of next-generation optoelectronic, photonic, and quantum technologies. Together, these findings underscore MOCVD’s pivotal role in enabling high-performance devices and sustaining leadership in post-Moore semiconductor technologies. Full article

As semiconductor devices continue to scale down and integrate more densely, the atomic-level planarization of metal interconnects and dielectric layers is critical. Consequently, the development of chemical mechanical planarization (CMP) materials must address both high polishing performance and environmental sustainability. In this study, γ-Fe₂O₃@SiO₂ core–shell abrasive particles were designed to overcome the performance and recyclability limitations of conventional SiO₂ abrasives. The γ-Fe₂O₃ core enables an efficient magnetic separation from spent slurry, while the tunable SiO₂ shell enhances the dispersion stability and modulates the polishing characteristics. When applied to the CMP of tungsten (W) thin films, the optimized γ-Fe₂O₃@SiO₂ abrasives achieved a higher removal rate and lower surface roughness than commercial SiO₂-based slurries. Notably, the abrasives maintained a high performance even after 10 reuse cycles through simple magnetic recovery. This demonstrates a highly efficient and sustainable design strategy for next-generation CMP materials. Full article

This study investigates the deposition of silicon nitride (SiN) thin films for advanced semiconductor applications, with a specific focus on overcoming thermal challenges in plasma-enhanced atomic layer deposition (PE-ALD) at an elevated temperature of 550 °C. At such high temperatures, a critical obstacle is wafer warpage induced by thermal and mechanical stress, which increases localized thermal contact resistance and degrades film uniformity. To address this, a wafer chucking function was integrated into a monopolar electrostatic chuck (ESC) heater. The ESC secures the wafer to the heater surface, effectively mitigating warpage and ensuring a uniform temperature distribution. Chucking performance was verified by monitoring lift-up motor torque variations and plasma parameters, such as self-bias voltage (Vdc) and peak-to-peak voltage (Vpp), confirming the formation of stable electrostatic coupling. A comparative analysis was conducted between SiN films deposited with and without a chucking voltage of +1000 V. Statistical evaluation across repeated experimental runs (n = 3) confirmed that ESC chucking significantly enhanced spatial uniformity without altering the fundamental PE-ALD growth mechanism. Notably, the application of ESC chucking suppressed the localized temperature drop at the wafer periphery, reducing the in-wafer temperature gradient from 7~8 °C to 2~3 °C. This thermal stability resulted in improved thickness uniformity (variation < 1 Å) and an increase in film density from 2.83 to 2.94 g/cm³. Furthermore, the physical contact between the wafer and the heater effectively eliminated backside deposition to near-zero levels. Pattern evaluation revealed an exceptional step coverage of 99% in high-aspect-ratio (20:1) structures. These results suggest that ESC-assisted PE-ALD provides a robust and reproducible method for high-quality SiN deposition by minimizing thermally induced film variations. Full article

Deposition of amorphous boron (a-B) onto Si substrates via chemical decomposition of B₂H₆ molecules produces a-B/Si, heterojunctions which are the core parts of photodetectors used in vacuum ultraviolet (VUV) and potentially in extreme ultraviolet (EUV) lithography. However, fundamental questions regarding the limit on the thickness of the deposited a-B thin films and the intrinsic electronic nature of the B atoms adjacent to the Si substrate remain unanswered. Here we investigated the local structural and electronic properties of atomic-thin a-B layers at the Si{001} substrates using ab initio molecular dynamics (AIMD) techniques. The investigation revealed a rich variety of local chemical bonding and consequently interfacial electronic properties. For thin a-B layer(s)/Si systems, most of the a-B atoms at the interface formed (-B-Si-B-Si-) chains on the Si{001} surface. These B atoms were found to occupy the positions of the missing Si atoms and were bonded to the surficial Si atoms. The surficial Si atoms predominantly have two B neighbors. Localized defect states at the Fermi level for the interfacial Si and B atoms were found in the pseudo-gap. These states have a major influence on the electrical properties of the device. The predicted minimum thickness of the a-B films is about 1 to 2 nm, a useful metric for the manufacturing of a-B/Si devices. The information obtained here further helps us to understand the working mechanisms of a-B/Si interfaces for photon detection and constructing new core devices for potential applications in the field of metal/semiconductor heterojunctions for photon detection, photovoltaics, Schottky diodes and semiconductor devices. Full article

Extreme ultraviolet (EUV) pellicles must exhibit high optical transmittance, thermal, and mechanical stability to withstand the demands of semiconductor fabrication. ZrSi₂ has attracted attention as a pellicle material due to its excellent optical characteristics. The thickness of ZrSi₂ films is being reduced to enhance EUV transmittance (EUVT). Since the mechanical strength of nanoscale thin films can be influenced by grain-size effects described by either the Hall–Petch or inverse Hall–Petch relationship, grain-size control becomes critical. In this study, ZrSi₂/SiN_x free-standing membranes with different ZrSi₂ grain sizes were fabricated by sputter deposition followed by annealing at 425–600 °C. Grazing incidence X-ray diffraction analysis confirmed that the ZrSi₂ thin films retained their orthorhombic structure up to 600 °C. Scanning transmission electron microscopy showed a gradual increase in grain size with increasing annealing temperature. EUVT remained almost unchanged regardless of the ZrSi₂ grain size. In contrast, the ultimate tensile strength increased with grain size up to 64 nm and decreased with further grain growth. These results indicate that although the optical properties of ZrSi₂-based EUV pellicles are grain-size independent, their mechanical strength can be optimized through microstructural engineering, consistent with the Hall–Petch relationship. Full article