Search Results (34)

Mg-doped gallium oxide films were prepared on single crystal sapphire substrates through radio frequency magnetron sputtering technology, and then AlN films of different thicknesses were deposited on them as passivation layers. Finally, Pt interdigitated electrodes were prepared through mask plate and ion sputtering technology to make metal–insulator–semiconductor–insulator–metal (MISIM) photodetectors. The influence of the AlN passivation layer on the optical properties and photodetection performance of the device was investigated using UV-Vis (ultraviolet-visible absorption spectroscopy) spectrophotometer and a Keith 4200 semiconductor tester. The device’s performance was significantly enhanced. Among them, the MISIM-structured device achieves a responsivity of 2.17 A/W, an external quantum efficiency (EQE) of 1100%, a specific detectivity (D*) of 1.09 × 10¹² Jones, and a photo-to-dark current ratio (PDCR) of 2200. The results show that different thicknesses of AlN passivation layers have an effect on the detection performance of Mg-doped β-Ga₂O₃ films in the UV detection of the solar-blind UV region. The AlN’s thickness has little effect on the bandgap when it is 3 nm and 5 nm, and the bandgap increases at 10 nm. The transmittance of the film increases with the increase in AlN thickness and decreases when the AlN’s thickness increases to 10 nm. The photocurrent exhibits a non-monotonic dependence on AlN thickness at 10 V, and the dark current gradually decreases. The thickness of the AlN passivation layer also has a significant impact on the response characteristics of the detector, and the response characteristics of the device are best when the thickness of the AlN passivation layer is 5 nm. The responsiveness, detection rate, and external quantum efficiency of the device first increase and then decrease with the thickness of the AlN layer, and comprehensive performance is best when the thickness of the AlN passivation layer is 5 nm. The reason is that the AlN layer plays a passivating role on the surface of Ga₂O₃ films, reducing surface defects and inhibiting its capture of photogenerated carriers, while the appropriate thickness of the AlN layer increases the barrier height at the semiconductor interface, forming a built-in electric field and improving the response speed. Finally, the AlN layer inhibits the adsorption and desorption processes between the photogenerated electron–hole pair and O₂, thereby retaining more photogenerated non-equilibrium carriers, which also helps enhance photoelectric detection performance. Full article

Perovskite solar cells (PSCs) leverage the exceptional photoelectric properties of perovskite materials, yet interfacial energy level mismatches limit carrier extraction efficiency. In this work, energy level alignment was exploited to reduce the charge transport barrier, which can be conducive to the transmission of photo-generated carriers and reduce the probability of electron–hole recombination. We designed a dual-transition perovskite solar cell (PSC) with the structure of FTO/TiO₂/Nb₂O₅/CH₃NH₃PbI₃/MoO₃/Spiro-OMeTAD/Au by finite element analysis methods. Compared with the pristine device (FTO/TiO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Au), the open-circuit voltage of the optimized cell increases from 0.98 V to 1.06 V. Furthermore, the design of a circular platform light-trapping structure makes up for the light loss caused by the transition at the interface. The short-circuit current density of the optimized device increases from 19.81 mA/cm² to 20.36 mA/cm², and the champion device’s power conversion efficiency (PCE) reaches 17.83%, which is an 18.47% improvement over the planar device. This model provides new insight for the optimization of perovskite devices. Full article

With the intensification of global climate change, buildings in hot climate zones face increasing challenges related to high energy consumption and thermal comfort. Building integrated photovoltaic (BIPV) façades, which combine power generation and energy saving potential, require further optimization in their climate-adaptive design. Most existing studies primarily focus on the photoelectric conversion efficiency of PV modules, yet there is a lack of systematic analysis of the coupled effects of temperature, humidity, and solar radiation intensity on PV performance. Moreover, the current literature rarely addresses the regional material degradation patterns, integrated cooling solutions, or intelligent control systems suitable for hot and humid climates. There is also a lack of practical, climate specific design guidelines that connect theoretical technologies with real world applications. This paper systematically reviews BIPV façade design strategies following a climate zoning framework, summarizing research progress from 2019 to 2025 in the areas of material innovation, thermal management, light regulation strategies, and parametric design. A climate responsive strategy is proposed to address the distinct challenges of humid hot and dry hot climates. Finally, this study discusses the barriers and challenges of BIPV system applications in hot climates and highlights future research directions. Unlike previous reviews, this paper offers a multi-dimensional synthesis that integrates climatic classification, material suitability, passive and active cooling strategies, and intelligent optimization technologies. It further provides regionally differentiated recommendations for façade design and outlines a unified framework to guide future research and practical deployment of BIPV systems in hot climates. Full article

Extended shortwave infrared (eSWIR) detectors operating at high temperatures are widely utilized in planetary science. A high-performance eSWIR based on pBin InAs/GaSb/AlSb type-II superlattice (T2SL) grown on a GaSb substrate is demonstrated. It achieves the optimization of the device’s optoelectronic performance by adjusting the p-type doping concentration in the AlAs_0.1Sb_0.9/GaSb barrier. Experimental and TCAD simulation results demonstrate that both the device’s dark current and responsivity grow as the doping concentration rises. Here, the bulk dark current density and bulk differential resistance area are extracted to calculate the bulk detectivity for evaluating the photoelectric performance of the device. When the barrier concentration is 5 × 10¹⁶ cm⁻³, the bulk detectivity is 2.1 × 10¹¹ cm·Hz^1/2/W, which is 256% higher than the concentration of 1.5 × 10¹⁸ cm⁻³. Moreover, at 300 K (−10 mV), the 100% cutoff wavelength of the device is 1.9 μm, the dark current density is 9.48 × 10⁻⁶ A/cm², and the peak specific detectivity is 7.59 × 10¹⁰ cm·Hz^1/2/W (at 1.6 μm). An eSWIR focal plane array (FPA) detector with a 320 × 256 array scale was fabricated for this purpose. It demonstrates a remarkably low blind pixel rate of 0.02% and exhibits an excellent imaging quality at room temperature, indicating its vast potential for applications in infrared imaging. Full article

Two-dimensional materials have emerged as core components for next-generation optoelectronic devices due to their quantum confinement effects and tunable electronic properties. Indium selenide (InSe) demonstrates breakthrough photoelectric performance, with its remarkable light-responsive characteristics spanning from visible to near-infrared regions, offering application potential in high-speed imaging, optical communication, and biosensing. This study investigates the doping characteristics of InSe using first-principles calculations, focusing on the doping and adsorption behaviors of Argentum (Ag) and Bismuth (Bi) atoms in InSe and their effects on its electronic structure. The research reveals that Ag atoms preferentially adsorb at interlayer vacancies with a binding energy of −2.19 eV, forming polar covalent bonds. This reduces the band gap from the intrinsic 1.51 eV to 0.29–1.16 eV and induces an indirect-to-direct band gap transition. Bi atoms doped at the center of three Se atoms exhibit a binding energy of −2.06 eV, narrowing the band gap to 0.19 eV through strong ionic bonding, while inducing metallic transition at inter-In sites. The introduced intermediate energy levels significantly reduce electron transition barriers (by up to 60%) and enhance carrier separation efficiency. This study links doping sites, electronic structures, and photoelectric properties through computational simulations, offering a theoretical framework for designing high-performance InSe-based photodetectors. It opens new avenues for narrow-bandgap near-infrared detection and carrier transport optimization. Full article

The photocatalytic N₂ fixation reaction still faces high N₂ activation energy barriers and inefficient electron transfer efficiency, limiting the overall ammonia yield of semiconductors. This communication reports on the construction of an organic/inorganic g-C₃N₄/oxygen vacancy-enriched TiO₂ (g-C₃N₄/TiO₂-OV) composite system via the annealing treatment in an H₂/Ar mixed atmosphere for enhanced photocatalytic N₂ fixation activity. After illumination for 4 h, g-C₃N₄/TiO₂-OV with 1 wt% g-C₃N₄ loading demonstrates the optimal ammonia yield of 31.6 μmol L⁻¹. This study demonstrates the existence of oxygen vacancies on the TiO₂ surface through EPR while also investigating the carrier separation and transport efficiency of the material using photoelectric characterization. The experimental results indicate that the introduction of OVs into TiO₂ serves as Lewis acid sites, facilitating N₂ adsorption. Moreover, the lower onset potential and higher current density of g-C₃N₄/TiO₂-OV composites indicate that the construction of the heterojunction composite significantly decreases the interfacial charge recombination and N₂ activation energy barrier, effectively improving the ammonia yield towards N₂ photo-reduction. This work emphasizes the importance of rational tailoring of TiO₂-based photocatalysts in the field of N₂ fixation. Full article

Vertical-cavity surface emitting lasers in UVA band (UVA VCSELs) operating at a central wavelength of 395 nm are designed by employing PICS3D(2021) software. The simulation results indicate that the thickness of the InGaN quantum well and GaN barrier layers affect the emission efficiency of UVA VCSELs greatly, suggesting an optimal thicknesses of 2.2 nm for the well layer and 2.7 nm for the barrier layer. Additionally, an overall consideration of threshold current, series resistance, photoelectric conversion efficiency, and optical output power results in the optimized thickness of the ITO current spreading layer, ~20 nm. Furthermore, by employing a five-pair Al_0.15Ga_0.85N/GaN multi-quantum barrier electron blocking layer (EBL) instead of a single Al_0.2Ga_0.8N EBL, the device shows a ~51% enhancement in the optical output power and a ~48% reduction in the threshold current. The number of distributed Bragg reflector (DBR) pairs also plays crucial roles in the device’s photoelectric performance. The device designed in this study demonstrates a minimum lasing threshold of 1.16 mA and achieves a maximum wall plug efficiency of approximately 5%, outperforming other similar studies. Full article

The single-layer MoS₂ is a highly sought-after semiconductor material in the field of photoelectric performance due to its exceptional electron mobility and narrow bandgap. However, its photocatalytic efficiency is hindered by the rapid recombination rate of internal photogenerated electron–hole pairs. Currently, the construction of heterojunctions has been demonstrated to effectively mitigate the recombination rate of photogenerated electron–hole pairs. Therefore, this paper employs the first principles method to calculate and analyze the four heterojunctions formed by MoS₂/WSe₂, MoS₂/MoSe₂, MoS₂/AlN, and MoS₂/ZnO. The study demonstrates that the four heterojunctions exhibit structural stability. The construction of heterojunctions, as compared to a monolayer MoS₂, leads to a reduction in the band gap, thereby lowering the electron transition barrier and enhancing the light absorption capacity of the materials. The four systems exhibit II-type heterojunction. Therefore, the construction of heterojunctions can effectively enhance the optical properties of these systems. By forming heterojunctions MoS₂/WSe₂ and MoS₂/MoSe₂, the absorption coefficient in the visible light region is significantly increased, resulting in a greater ability to respond to light compared to that of MoS₂/ZnO and MoS₂/AlN. Consequently, MoS₂-based heterojunctions incorporating chalcogenide components WSe₂ and MoSe₂, respectively, exhibit superior catalytic activity compared to MoS₂ heterojunctions incorporating non-chalcogenide components ZnO and AlN, respectively. The absorption spectrum analysis reveals that MoS₂/MoSe₂ exhibits the highest light responsivity among all investigated systems, indicating its superior photoelectric performance. Full article

Titanium dioxide (TiO₂) photocatalysts, characterized by exceptional photocatalytic activity, high photoelectric conversion efficiency, and economic viability, have found widespread application in recent years for azo dye degradation. However, inherent constraints, such as the material’s limited visible light absorption stemming from its bandgap and the swift recombination of charge carriers, have impeded its broader application potential. Encouragingly, these barriers can be mitigated through the modification of TiO₂. In this review, the common synthesis methods of TiO₂ are reviewed, and the research progress of TiO₂ modification technology at home and abroad is discussed in detail, including precious metal deposition, transition metal doping, rare earth metal doping, composite semiconductors, and composite polymers. These modification techniques effectively enhance the absorption capacity of TiO₂ in the visible region and reduce the recombination rate of carriers and electrons, thus significantly improving its photocatalytic performance. Finally, this paper looks forward to the future development direction of TiO₂ photocatalytic materials, including the exploration of new modified materials, in-depth mechanism research, and performance optimization in practical applications, to provide useful references for further research and application of TiO₂ photocatalytic materials. Full article

Metal halide perovskite (MHP) detectors are highly esteemed for their outstanding photoelectric properties and versatility in applications. However, they are unfortunately prone to degradation, which constitutes a significant barrier to their sustained performance. This review meticulously delves into the causes leading to their instability, predominantly attributable to factors such as humidity, temperature, and electric fields and, notably, to various radiation factors such as X-rays, γ-rays, electron beams, and proton beams. Furthermore, it outlines recent advancements in strategies aimed at mitigating these detrimental effects, emphasizing breakthroughs in composition engineering, heterostructure construction, and encapsulation methodologies. At last, this review underscores the needs for future improvements in theoretical studies, material design, and standard testing protocols. In the pursuit of optimizing the chemical stability of MHP detectors, collaborative efforts are in an imperative need. In this way, broad industrial applications of MHP detectors could be achieved. Full article

We present a straightforward and cost-effective method for the fabrication of flexible photodetectors, utilizing tetragonal phase VO₂ (A) nanorod (NR) networks. The devices exhibit exceptional photosensitivity, reproducibility, and stability in ambient conditions. With a 2.0 V bias voltage, the device demonstrates a photocurrent switching gain of 1982% and 282% under irradiation with light at wavelengths of 532 nm and 980 nm, respectively. The devices show a fast photoelectric response with rise times of 1.8 s and 1.9 s and decay times of 1.2 s and 1.7 s for light at wavelengths of 532 nm and 980 nm, respectively. In addition, the device demonstrates exceptional flexibility across large-angle bending and maintains excellent mechanical stability, even after undergoing numerous extreme bending cycles. We discuss the electron transport process within the nanorod networks, and propose a mechanism for the modulation of the barrier height induced by light. These characteristics reveal that the fabricated devices hold the potential to serve as a high-performance flexible photodetector. Full article

This paper introduces a novel approach to addressing the challenge of accurately timing short distance runs, a critical aspect in the assessment of athletic performance. Electronic photoelectric barriers, although recognized for their dependability and accuracy, have remained largely inaccessible to non-professional athletes and smaller sport clubs due to their high costs. A comprehensive review of existing timing systems reveals that claimed accuracies beyond 30 ms lack experimental validation across most available systems. To bridge this gap, a mobile, camera-based timing system is proposed, capitalizing on consumer-grade electronics and smartphones to provide an affordable and easily accessible alternative. By leveraging readily available hardware components, the construction of the proposed system is detailed, ensuring its cost-effectiveness and simplicity. Experiments involving track and field athletes demonstrate the proficiency of the proposed system in accurately timing short distance sprints. Comparative assessments against a professional photoelectric cells timing system reveal a remarkable accuracy of 62 ms, firmly establishing the reliability and effectiveness of the proposed system. This finding places the camera-based approach on par with existing commercial systems, thereby offering non-professional athletes and smaller sport clubs an affordable means to achieve accurate timing. In an effort to foster further research and development, open access to the device’s schematics and software is provided. This accessibility encourages collaboration and innovation in the pursuit of enhanced performance assessment tools for athletes. Full article

Following the successful experimental synthesis of single-layer metallic 1T-TaS₂ and semiconducting 2H-MoS₂, 2H-WSe₂, we perform a first-principles study to investigate the electronic and interfacial features of metal/semiconductor 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures (vdWHs) contact. We show that 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ form n-type Schottky contact (n-ShC type) and p-type Schottky contact (p-ShC type) with ultralow Schottky barrier height (SBH), respectively. This indicates that 1T-TaS₂ can be considered as an effective metal contact with high charge injection efficiency for 2H-MoS₂, 2H-WSe₂ semiconductors. In addition, the electronic structure and interfacial properties of 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures can be transformed from n-type to p-type Schottky contact through the effect of layer spacing and the electric field. At the same time, the transition from Schottky contact to Ohmic contact can also occur by relying on the electric field and different interlayer spacing. Our results may provide a new approach for photoelectric application design based on metal/semiconductor 1T-TaS₂/2H-MoS₂ and 1T-TaS₂/2H-WSe₂ van der Waals heterostructures. Full article

Organic-inorganic halide perovskite solar cells (PSCs) have attracted much attention in recent years due to their simple manufacturing process, low cost, and high efficiency. So far, all efficient organic-inorganic halide PSCs are mainly made of polycrystalline perovskite films. There are transmission barriers and high-density defects on the surface, interface, and grain boundary of the films. Among them, the deep-level traps caused by specific charged defects are the main non-radiative recombination centers, which is the most important factor in limiting the photoelectric conversion efficiency of PSCs devices to the Shockley-Queisser (S-Q) theoretical efficiency limit. Therefore, it is imperative to select appropriate passivation materials and passivation strategies to effectively eliminate defects in perovskite films to improve their photovoltaic performance and stability. There are various passivation strategies for different components of PSCs, including interface engineering, additive engineering, antisolvent engineering, dopant engineering, etc. In this review, we summarize a large number of defect passivation work to illustrate the latest progress of different types of passivators in regulating the morphology, grain boundary, grain size, charge recombination, and defect density of states of perovskite films. In addition, we discuss the inherent defects of key materials in carrier transporting layers and the corresponding passivation strategies to further optimize PSCs components. Finally, some perspectives on the opportunities and challenges of PSCs in future development are highlighted. Full article

All-inorganic perovskite solar cells are attractive photovoltaic devices because of their excellent optoelectronic performance and thermal stability. Unfortunately, the currently used efficient inorganic perovskite materials can spontaneously transform into undesirable phases without light-absorption properties. Studies have been carried out to stabilize all-inorganic perovskite by mixing low-dimensional perovskite. Compared with organic two-dimensional (2D) perovskite, inorganic 2D Cs₂PbI₂Cl₂ shows superior thermal stability. Our group has successfully fabricated 2D/3D mixed-dimensional Cs₂PbI₂Cl₂/CsPbI_2.5Br_0.5 films with increasing phase stability. The high boiling point of dimethyl sulfoxide (DMSO) makes it a preferred solvent in the preparation of Cs₂PbI₂Cl₂/CsPbI_2.5Br_0.5 inorganic perovskite. When the perovskite films are prepared by the one-step solution method, it is difficult to evaporate the residual solvent molecules from the prefabricated films, resulting in films with rough surface morphology and high defect density. This study used the rapid precipitation method to control the formation of perovskite by treating it with methanol/isopropanol (MT/IPA) mixed solvent to produce densely packed, smooth, and high-crystallized perovskite films. The bulk defects and the carrier transport barrier of the interface were effectively reduced, which decreased the recombination of the carriers in the device. As a result, this effectively improved photoelectric performance. Through treatment with MT/IPA, the photoelectric conversion efficiency (PCE) of solar cells prepared in the N₂ atmosphere increased from 13.44% to 14.10%, and the PCE of the device prepared in the air increased from 3.52% to 8.91%. Full article