Search Results (29)

Recent advancements in hybrid photonic integrated circuits (PICs) for wireless communications are reviewed, with a focus on innovations developed at Fraunhofer HHI. This work leverages hybrid integration technology, which combines indium phosphide (InP) active elements, silicon nitride (Si₃N₄) low-loss waveguides, and high-efficient thermal-optical tunable polymers with micro-optical functions to achieve fully integrated wireless transceivers. Key contributions include (1) On-chip optical injection locking for generating phase-locked optical beat notes at 45 GHz, enabled by cascaded InP phase modulators and hybrid InP/polymer tunable lasers with a 3.8 GHz locking range. (2) Waveguide-integrated THz emitters and receivers, featuring photoconductive antennas (PCAs) with a 22× improved photoresponse compared to top-illuminated designs, alongside scalable 1 × 4 PIN-PD and PCA arrays for enhanced power and directivity. (3) Beam steering at 300 GHz using a polymer-based optical phased array (OPA) integrated with an InP antenna array, achieving continuous steering across 20° and a 10.6 dB increase in output power. (4) Demonstration of fully integrated hybrid wireless transceiver PICs combining InP, Si₃N₄, and polymer material platforms, validated through key component characterization, on-chip optical frequency comb generation, and coherent beat note generation at 45 GHz. These advancements result in compact form factors, reduced power consumption, and enhanced scalability, positioning PICs as an enabling technology for future high-speed wireless networks. Full article

Terahertz noise sources have important application prospects in noise figure measurements. In this paper, a 0.4 THz broadband terahertz noise source based on a photoconductive antenna is proposed. As a demonstration of feasibility, this terahertz noise source is generated by mixing three beams of Gaussian-shaped incoherent light. The resulting excess noise ratio (ENR) across different frequency bands is as follows: 20.9 dB, with a flatness of ±7.9 dB in the 75~110 GHz range; 19.3 dB, with a flatness of ±6.2 dB in the 110~170 GHz range; 20.6 dB, with a flatness of ±4.8 dB in the 170~260 GHz range; and 18.7 dB, with a flatness of ±4.3 dB in the 260~400 GHz range. These results demonstrate that the terahertz noise source based on photoconductive antennas that we proposed shows great potential in high-frequency bands and noise figure measurements. Full article

Recent advancements in novel fiber-coupled and portable terahertz (THz) spectroscopic imaging technology have accelerated applications in nondestructive testing (NDT). Although the polarization information of THz waves can play a critical role in material characterization, there are few demonstrations of polarization-resolved THz imaging as an NDT modality due to the deficiency of such polarimetric imaging devices. In this paper, we have inspected industrial carbon fiber composites using a portable and handheld imaging scanner in which the THz polarizations of two orthogonal channels are simultaneously captured by two photoconductive antennas. We observed significant polarimetric differences between the two-channel images of the same sample and the resulting THz Stokes vectors, which are attributed to the anisotropic conductivity of carbon fiber composites. Using both polarimetric channels, we can visualize the superficial and underlying interfaces of the first laminate. These results pave the way for the future applications of THz polarimetry to the assessment of coatings or surface quality on carbon fiber-reinforced substrates. Full article

This investigation explores the structural and electronic properties of low-temperature-grown (InAs)₄(GaAs)₃/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)₄(GaAs)₃ short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm²/V.s. The reason for the higher mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas. Full article

Transient terahertz time-domain spectroscopy (THz-TDS) imaging has emerged as a novel non-ionizing and noninvasive biomedical imaging modality, designed for the detection and characterization of a variety of tissue malignancies due to their high signal-to-noise ratio and submillimeter resolution. We report our design of a pair of aspheric focusing lenses using a commercially available lens-design software that resulted in about 200 × 200-μm² focal spot size corresponding to the 1-THz frequency. The lenses are made of high-density polyethylene (HDPE) obtained using a lathe fabrication and are integrated into a THz-TDS system that includes low-temperature GaAs photoconductive antennae as both a THz emitter and detector. The system is used to generate high-resolution, two-dimensional (2D) images of formalin-fixed, paraffin-embedded murine pancreas tissue blocks. The performance of these focusing lenses is compared to the older system based on a pair of short-focal-length, hemispherical polytetrafluoroethylene (Teflon^TM) lenses and is characterized using THz-domain measurements, resulting in 2D maps of the tissue refractive index and absorption coefficient as imaging markers. For a quantitative evaluation of the lens effect on the image resolution, we formulated a lateral resolution parameter, R₂₀₈₀, defined as the distance required for a 20–80% transition of the imaging marker from the bare paraffin region to the tissue region in the same image frame. The R₂₀₈₀ parameter clearly demonstrates the advantage of the HDPE lenses over Teflon^TM lenses. The lens-design approach presented here can be successfully implemented in other THz-TDS setups with known THz emitter and detector specifications. Full article

Over the past decade, metasurfaces (MTSs) have emerged as a highly promising platform for the development of next-generation, miniaturized, planar devices across a wide spectrum of microwave frequencies. Among their various applications, the concept of MTS-based antennas, particularly those that are based on surface wave excitation, represents a groundbreaking advancement with significant implications for communication technologies. However, existing literature primarily focuses on MTS configurations printed on traditional substrates, largely overlooking the potential benefits of employing photosensitive substrates. This paper endeavors to pioneer this novel path. We present a specialized design of a modulated MTS printed on a silicon substrate, which acts as a photosensitive Ka-band surface wave antenna. Remarkably, the gain of this antenna can be time-modulated, achieving a variance of up to 15 dB, under low-power (below 1 W/cm²) optical illumination at a wavelength of 971 nm. This innovative approach positions the antenna as a direct transducer, capable of converting an optically modulated signal into a microwave-modulated radiated signal, thus offering a new dimension in antenna technology and functionality. Full article

The low-temperature-grown InGaAs (LT-InGaAs) photoconductive antenna has received great attention for the development of highly compact and integrated cheap THz sources. However, the performance of the LT-InGaAs photoconductive antenna is limited by its low resistivity and mobility. The generated radiated power is much weaker compared to the low-temperature-grown GaAs-based photoconductive antennas. This is mainly caused by the low abundance of excess As in LT-InGaAs with the conventional growth mode, which inevitably gives rise to the formation of As precipitate and alloy scattering after annealing. In this paper, the migration-enhanced molecular beam epitaxy technique is developed to grow high-quality (InAs)_m/(GaAs)_n short-period superlattices with a sharp interface instead of InGaAs on InP substrate. The improved electron mobility and resistivity at room temperature (RT) are found to be 843 cm²/(V·s) and 1648 ohm/sq, respectively, for the (InAs)_m/(GaAs)_n short-period superlattice. The band-edge photo-excited carrier lifetime is determined to be ~1.2 ps at RT. The calculated photocurrent intensity, obtained by solving the Maxwell wave equation and the coupled drift–diffusion/Poisson equation using the finite element method, is in good agreement with previously reported results. This work may provide a new approach for the material growth towards high-performance THz photoconductive antennas with high radiation power. Full article

Continuous-wave tunable photonics-based THz sources present limited output power due to the restricted input optical power accepted by photomixers, along with reduced radiation resulting from low paraxial field amplitude. Here, we investigate multipolar antenna designs to increase the available continuous-wave THz output power by incorporating more photomixers. For this purpose, the spatial structures of the optical and THz E-fields are designed to enhance THz power and radiation in the far field. Simulations of 2 to 4 dipole antennas are conducted, demonstrating an improvement in antenna gain compared to standard dipole antennas. This is in addition to a potential increase in THz power and radiation for photomixing applications. Such work also paves the way for functionalizing the spatial structure of THz light for advanced applications. Full article

The novel design of a terahertz large aperture photoconductive antenna (LAPCA) is reported. It features a longitudinal orientation of the bias electric field within the photoconductive substrate, and has the advantage of a small interelectrode gap, resulting in a higher field for the same applied voltage. The proposed LAPCA configuration has been tested with a nitrogen-doped (∼10 ppm) synthetic monocrystalline diamond, which is a promising material for high-intensity and high-power terahertz sources. Two antennas with different high-voltage electrode realizations were assembled, pumped by a 400 nm femtosecond laser, and tested for THz emitter function. The experimental data are found to be in good correlation with the numerical simulation results. The performance of antennas with the conventional transverse E-field configuration and the novel longitudinal configuration is compared and discussed. Full article

InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall effect measurement and a photoresponse test. The experimental results demonstrate that the sample grown at 257.5~260 °C exhibits the highest resistivity (1290 Ω × cm) and lowest carrier concentration (3.18 × 10¹⁴ cm⁻³), along with the highest mobility (187.2 cm²/Vs). Furthermore, the highest photoresponse (1.21) relative to dark resistivity was obtained under 1500 nm excitation. The optimized growth parameter of InGaAs/InAlAs multilayered structures is of great significance for fabricating high-performance terahertz photoconductive semiconductor antennas. Full article

Charge-sensitive infrared photo-transistors (CSIP) are quantum detectors of mid-infrared radiation $(\lambda =4\mathrm{\mu }\mathrm{m}-14\mathrm{\mu }\mathrm{m})$ which have been reported to have outstanding figures of merit and sensitivities that allow single photon detection. The typical absorbing region of a CSIP consists of an Al_xGa_1-xAs quantum heterostructure, where a GaAs quantum well, where the absorption takes place, is followed by a triangular barrier with a graded x(Al) composition that connects the quantum well to a source-drain channel. Here, we report a CSIP designed to work for a 9.3 µm wavelength where the Al composition is kept constant and the triangular barrier is replaced by tunnel-coupled quantum wells. This design is thus conceptually closer to quantum cascade detectors (QCDs) which are an established technology for detection in the mid-infrared range. While previously reported structures use metal gratings in order to couple infrared radiation in the absorbing quantum well, here, we employ a 45° wedge facet coupling geometry that allows a simplified and reliable estimation of the incident photon flux Φ in the device. Remarkably, these detectors have an “auto-calibrated” nature, which enables the precise assessment of the photon flux Φ solely by measuring the electrical characteristics and from knowledge of the device geometry. We identify an operation regime where CSIP detectors can be directly compared to other unipolar quantum detectors such as quantum well infrared photodetectors (QWIPs) and QCDs and we estimate the corresponding detector figure of merit under cryogenic conditions. The maximum responsivity R = 720 A/W and a photoconductive gain G~2.7 × 10⁴ were measured, and were an order of magnitude larger than those for QCDs and quantum well infrared photodetectors (QWIPs). We also comment on the benefit of nano-antenna concepts to increase the efficiency of CSIP in the photon-counting regime. Full article

We demonstrate the use of a novel, integrated THz system to obtain time-domain signals for spectroscopy in the 0.1–1.4 THz range. The system employs THz generation in a photomixing antenna excited by a broadband amplified spontaneous emission (ASE) light source and THz detection with a photoconductive antenna by coherent cross-correlation sampling. We benchmark the performance of our system against a state-of-the-art femtosecond-based THz time-domain spectroscopy system in terms of mapping and imaging of the sheet conductivity of large-area graphene grown by chemical vapor deposition (CVD) and transferred to a PET polymer substrate. We propose to integrate the algorithm for the extraction of the sheet conductivity with the data acquisition, thereby enabling true in-line monitoring capability of the system for integration in graphene production facilities. Full article

It has been shown recently that a photoconductive antenna (PCA) based on a nitrogen-doped diamond can be effectively excited by the second harmonic of a Ti:sapphire laser (λ = 400 nm). The THz emission performance of the PCA can be significantly increased if a much stronger electric field is created between the close-located electrodes. To produce a homogeneous electric field over the entire excited diamond volume, the laser fabrication of deep-buried graphite electrodes inside the diamond crystal was proposed. Several electrodes consisting of the arrays of buried pillars connected by the surface graphite stripes were produced inside an HPHT diamond crystal using femtosecond and nanosecond laser pulses. Combining different pairs of the electrodes, a series of PCAs with various electrode interspaces was formed. The THz emission of the PCAs equipped with the buried electrodes was measured at different values of excitation fluence and bias voltage (DC and pulsed) and compared with the emission of the same diamond crystal when the bias voltage was applied to the surface electrodes on the opposite faces. All examined PCAs have demonstrated the square-law dependencies of the THz fluence on the field strength, while the saturation fluence fluctuated in the range of 1200–1600 µJ/cm². The THz emission performance was found to be approximately the same for the PCAs with the surface electrodes and with the buried electrodes spaced at a distance of 1.4–3.5 mm. However, it noticeably decreased when the distance between the buried electrodes was reduced to 0.5 mm. Full article

We discuss experimental and theoretical studies of the generation of the third terahertz (THz) frequency harmonic in thin films of Bi₂Se₃ and Bi_2-xSb_xTe_3-ySe_y (BSTS) topological insulators (TIs) and the generation of THz radiation in photoconductive antennas based on the TI films. The experimental results, supported by the developed kinetic theory of third harmonic generation, show that the frequency conversion in TIs is highly efficient because of the linear energy spectrum of the surface carriers and fast energy dissipation. In particular, the dependence of the third harmonic field on the pump field remains cubic up to the pump fields of 100 kV/cm. The generation of THz radiation in TI-based antennas is obtained and described for the pump, with the energy of photons corresponding to the electron transitions to higher conduction bands. Our findings open up possibilities for advancing TI-based films into THz photonics as efficient THz wave generators and frequency converters. Full article

This paper presents a novel system for generating and receiving quasi-continuous (QC) TeraHertz (THz) waves. A system design and theoretical foundation for QC-THz signal generation are presented. The proposed QC-THz system consists of commercially available photo-conductive antennas used for transmission and reception of THz waves and a custom-designed QC optical signal generator, which is based on a fast optical frequency sweep of a single telecom distributed-feedback laser diode and unbalanced optical fiber Michelson interferometer used for a high-frequency modulation. The theoretical model for the proposed system is presented and experimentally evaluated. The experimental results were compared to the state-of-the-art continuous-wave THz system. The comparison between the continuous-wave THz system and the proposed QC-THz system showed the ability to transmit and receive QC-THz waves up to 300 GHz. The upper-frequency limit is bounded by the length of the used Michelson interferometer. The presented design of THz signal generation has a potential for industrial application because it is cost-efficient and can be built using commercially available components. Full article