Search Results (540)

Intermediate-band photovoltaics promise single-junction efficiencies that exceed the Shockley and Queisser limit, yet viable material platforms and device geometries remain under debate. Here, we perform comprehensive two-dimensional device-scale simulations using Silvaco Atlas TCAD to analyze p-i-n In_0.20Ga_0.80N solar cells in which the intermediate band is supplied by In_0.35Ga_0.65N quantum dots located inside the intrinsic layer. Quantum-dot diameters from 1 nm to 10 nm and areal densities up to 116 dots per period are evaluated under AM 1.5G, one-sun illumination at 300 K. The baseline pn junction achieves a simulated power-conversion efficiency of 33.9%. The incorporation of a single 1 nm quantum-dot layer dramatically increases efficiency to 48.1%, driven by a 35% enhancement in short-circuit current density while maintaining open-circuit voltage stability. Further increases in dot density continue to boost current but with diminishing benefit; the highest efficiency recorded, 49.4% at 116 dots, is only 1.4 percentage points above the 40-dot configuration. The improvements originate from two-step sub-band-gap absorption mediated by the quantum dots and from enhanced carrier collection in a widened depletion region. These results define a practical design window centred on approximately 1 nm dots and about 40 dots per period, balancing substantial efficiency gains with manageable structural complexity and providing concrete targets for epitaxial implementation. Full article

High-frequency (h. f.) harmonic distortion (HD) of advanced SiGe heterojunction bipolar transistor (HBT)-based power cells (PwCs), featuring optimized metallization interconnections between individual HBTs, was investigated. Single tone input power (P_in) excitations at 1, 2, 5, and 10 GHz frequencies were employed. The output power (P_out) of the fundamental tone and its harmonics were analyzed in both the frequency and time domains. A rapid increase in the third harmonic of P_out was observed at input powers exceeding −8 dBm for a fundamental frequency of 10 GHz in two different PwC technologies. This increase in the third harmonic was analyzed in terms of nonlinear current waveforms, the nonlinearity of the HBT p-n junction diffusion capacitances, substrate current behavior versus P_in, and avalanche multiplication current. To assess the RF power performance of the PwCs, scalar and vectorial load-pull (LP) measurements were conducted and analyzed. Under matched conditions, the SiGe PwCs demonstrated good linearity, particularly at high frequencies. The key power performance of the PwCs was measured and simulated as follows: input power 1 dB compression point (P_{in_1dB}) of −3 dBm, transducer power gain (G_T) of 15 dB, and power added efficiency (PAE) of 50% at 30 GHz. All measured data were corroborated with simulations using the compact model HiCuM L2. Full article

Aiming at the problems of low withstand voltage and poor RF performance of traditional HEMT devices, a new AlGaN/GaN high electron mobility transistor device with a π-gate (NπGS HEMT) is designed in this paper. The new structure incorporates a π-gate design along with a PN-junction field plate and an AlGaN back-barrier layer. The device is modeled and simulated in Silvaco TCAD 2015 software and compared with traditional t-gate HEMT devices. The results show that the NπGS HEMT has a significant improvement in various characteristics. The new structure has a higher peak transconductance of 336 mS·mm⁻¹, which is 13% higher than that of the traditional HEMT structure. In terms of output characteristics, the new structure has a higher saturation drain current of 0.188 A/mm. The new structure improves the RF performance of the device with a higher maximum cutoff frequency of about 839 GHz. The device also has a better performance in terms of voltage withstand, exhibiting a higher breakdown voltage of 1817 V. These results show that the proposed new structure could be useful for future research on high voltage withstand and high RF HEMT devices. Full article

Background: Periodontitis is a chronic inflammatory disease influenced by host aging, yet the specific effects of aging on disease susceptibility remain unclear. Objective: This study aimed to evaluate whether aging increases susceptibility to Porphyromonas gingivalis (P. gingivalis)-induced periodontitis in a murine model. We formulated the null hypothesis that age does not affect susceptibility to periodontal bone loss. Methods: Young (8 weeks) and aged (78 weeks) male C57BL/6 mice were randomly assigned into four groups: young control, young infected, old control, and old infected (n = 8 per group, except for old control, where n = 7). Experimental periodontitis was induced by oral application of P. gingivalis suspended in 5% carboxymethylcellulose (CMC), administered every other day, for a total of three applications. Alveolar bone loss was assessed 39 days after the last inoculation using histomorphometric measurement of buccal distance from the cemento-enamel junction to the alveolar bone crest (CEJ–ABC distance) and micro-computed tomography (μCT) at mesial and distal interdental sites. Bonferroni’s correction was applied to the Mann–Whitney U Test to determine statistical significance. A p-value of less than 0.05 was considered statistically significant. Results: Morphometric analysis showed significantly greater buccal bone loss in infected mice versus controls in both age groups (young: 0.193 mm vs. 0.100 mm, p < 0.01; old: 0.262 mm vs. 0.181 mm, p < 0.01). μCT analysis revealed that interdental bone loss was significant only in aged infected mice (mesial: 0.155 mm vs. 0.120 mm, p < 0.05; distal: 0.185 mm vs. 0.100 mm, p < 0.01), and not significant in young infected mice. Conclusions: Aging significantly exacerbates P. gingivalis-induced alveolar bone loss, particularly in interdental regions. These results allowed us to reject the null hypothesis. This study validates a clinically relevant murine model for analyzing age-related periodontitis and provides a foundation for investigating underlying molecular mechanisms and potential therapeutic interventions. Full article

Laser ranging technology holds a key position in the military, aerospace, and industrial fields due to its high precision and non-contact measurement characteristics. As a core component, the performance of the photon detector directly determines the ranging accuracy and range. This paper systematically reviews the technological development of photonic detectors for laser ranging, with a focus on analyzing the working principles and performance differences of traditional photodiodes [PN (P-N junction photodiode), PIN (P-intrinsic-N photodiode), and APD (avalanche photodiode)] (such as the high-frequency response characteristics of PIN and the internal gain mechanism of APD), as well as their applications in short- and medium-range scenarios. Additionally, this paper discusses the unique advantages of special structures such as transmitting junction-type and Schottky-type detectors in applications like ultraviolet light detection. This article focuses on photon counting technology, reviewing the technological evolution of photomultiplier tubes (PMTs), single-photon avalanche diodes (SPADs), and superconducting nanowire single-photon detectors (SNSPDs). PMT achieves single-photon detection based on the external photoelectric effect but is limited by volume and anti-interference capability. SPAD achieves sub-decimeter accuracy in 100 km lidars through Geiger mode avalanche doubling, but it faces challenges in dark counting and temperature control. SNSPD, relying on the characteristics of superconducting materials, achieves a detection efficiency of 95% and a dark count rate of less than 1 cps in the 1550 nm band. It has been successfully applied in cutting-edge fields such as 3000 km satellite ranging (with an accuracy of 8 mm) and has broken through the near-infrared bottleneck. This study compares the differences among various detectors in core indicators such as ranging error and spectral response, and looks forward to the future technical paths aimed at improving the resolution of photon numbers and expanding the full-spectrum detection capabilities. It points out that the new generation of detectors represented by SNSPD, through material and process innovations, is promoting laser ranging to leap towards longer distances, higher precision, and wider spectral bands. It has significant application potential in fields such as space debris monitoring. Full article

Novel diluted magnetic semiconductors derived from BaZn₂As₂ are of considerable importance owing to their elevated Curie temperature of 260 K, the diversity of magnetic states they exhibit, and their prospective applications in multilayer heterojunctions. However, the transition from the intrinsic semiconductor BaZn₂As₂ (BZA) to its doped compounds has not been extensively explored, especially in relation to the significant intermediate compound Ba(Zn,Mn)₂As₂ (BZMA). This study aims to address this gap by performing susceptibility and magnetization measurements, in addition to electronic transport analyses, on these compounds in their single crystal form. Key findings include the following: (1) carriers can significantly modulate the magnetism, transitioning from a non-magnetic BZA to a weak magnetic BZMA, and subsequently to a hard ferromagnet (Ba,K)(Zn,Mn)₂As₂ with potassium (K) doping to BZMA; (2) two distinct sets of metal-insulator transitions were identified, which can be elucidated by the involvement of carriers and the emergence of various magnetic states, respectively; and (3) BZMA exhibits colossal negative magnetoresistance, and by lanthanum (La) doping, a potential n-type (Ba,La)(Zn,Mn)₂As₂ single crystal was synthesized, demonstrating promising prospects for p-n junction applications. This study enhances our understanding of the magnetic interactions and evolutions among these compounds, particularly in the low-doping regime, thereby providing a comprehensive physical framework that complements previous findings related to the high-doping region. Full article

Kesterite (CZTS/CZTSSe) thin-film solar cells are considered an eco-friendly, earth-abundant, and low-cost photovoltaic technology that can fulfill our future energy needs. Due to its outstanding properties including tunable bandgap and high absorption coefficient, the power conversion efficiency (PCE) has reached over 14%. However, toxic cadmium sulfide (CdS) is commonly used as an n-type buffer layer in kesterite thin-film solar cells (KTFSCs) to form a better p–n junction with the p-type CZTS/CZTSSe absorber. In addition to its toxicity, the CdS buffer layer shows parasitic absorption at low wavelengths (400–500 nm) owing to its low bandgap (2.4 eV). For the last few years, several efforts have been made to substitute CdS with an eco-friendly, Cd-free, cost-effective buffer layer with alternative large-bandgap materials such as ZnSnO, Zn (O, S), In₂Se₃, ZnS, ZnMgO, and TiO₂, which showed significant advances. Herein, we summarize the key findings of the research community using a Cd-free buffer layer in KTFSCs to provide a current scenario for future work motivating researchers to design new materials and strategies to achieve higher performance. Full article

In this study, borophene and nickel phthalocyanine (NiPc): borophene nanocomposites were prepared using the sonication method. The NiPc: borophene nanocomposite was uniformly obtained as a 10–80 nm-sized spherically shaped particle. Electrical conductivities (s) were measured as 3 × 10⁻¹³ Scm⁻¹ and 9.5 × 10⁻⁹ Scm⁻¹ for NiPc and the NiPc: borophene nanocomposite, respectively. The SEM image showed that borophene was homogeneously distributed in the NiPc matrix and increased the charge transport pathways. This is the main reason for a 10⁶-fold increase in electrical conductivity. An indium tin oxide (ITO)/NiPc: borophene nanocomposite-based thermoelectric generator (TEG) was prepared and characterized. The Seebeck coefficients (S) were calculated to be 5 μVK⁻¹ and 30 μVK⁻¹ for NiPc and the NiPc: borophene nanocomposite, respectively. A positive Seebeck coefficient value for the NiPc: borophene showed the p-type nature of the nanocomposite. The power factors (PF = sS2) were calculated as 7.5 × 10⁻¹⁶ μW m⁻¹ K⁻² and 8.6 × 10⁻¹⁰ μW m⁻¹ K⁻² for NiPc and the NiPc: borophene nanocomposite, respectively. Compositing NiPc with borophene increased the power factor by ~10⁶-fold. It has been concluded that the electrical conductivity and Seebeck coefficient of the NiPc: borophene material increases due to energy band convergence because of combining p-type NiPc with p-type borophene. Therefore, the NiPc: borophene nanocomposite is a promising material for TEG. Full article

Osteoarthritis (OA) is the most prevalent degenerative joint disorder worldwide, causing significant declines in quality of life. The osteochondral junction (OCJ), a critical structural interface between deep cartilage and subchondral bone, plays an essential role in OA progression but is challenging to assess using conventional magnetic resonance imaging (MRI) due to its short T2 relaxation times. This study aimed to evaluate the utility of ultrashort echo time (UTE) MRI biomarkers, including macromolecular fraction (MMF), magnetization transfer ratio (MTR), and T2*, for in vivo quantification of OCJ changes in knee OA for the first time. Forty-five patients (mean age: 53.8 ± 17.0 years, 50% female) were imaged using 3D UTE-MRI sequences on a 3T clinical MRI scanner. Patients were stratified into two OA groups based on radiographic Kellgren–Lawrence (KL) scores: normal/subtle (KL = 0–1) (n = 21) and mild to moderate (KL = 2–3) (n = 24). Quantitative analysis revealed significantly lower MMF (15.8  ±  1.4% vs. 13.6 ± 1.2%, p < 0.001) and MTR (42.5 ± 2.5% vs. 38.2  ±  2.3%, p < 0.001) in the higher KL 2–3 group, alongside a higher trend in T2* values (19.7  ±  2.6 ms vs. 21.6  ±  3.8 ms, p = 0.06). Moreover, MMF and MTR were significantly negatively correlated with KL grades (r = −0.66 and −0.59; p < 0.001, respectively), while T2* showed a weaker positive correlation (r = 0.26, p = 0.08). Receiver operating characteristic (ROC) analysis demonstrated superior diagnostic accuracy for MMF (AUC = 0.88) and MTR (AUC = 0.86) compared to T2* (AUC = 0.64). These findings highlight UTE-MT techniques (i.e., MMF and MTR) as promising imaging tools for detecting OCJ degeneration in knee OA, with potential implications for earlier and more accurate diagnosis and disease monitoring. Full article

Compared to the traditional flip-chip bonded focal plane array, in high-density vertically integrated photodiode (HDVIP) focal plane technology, the thickness of the mercury cadmium telluride (MCT or Hg_1−xCd_xTe) layer serves as a more critical parameter. This parameter not only influences the efficiency of photon energy absorption but also defines the pn junction area, thereby affecting the magnitude of the dark current. Furthermore, it significantly impacts the manufacturability of via-hole etching and formation processes. This paper investigated the photonic crystal resonances and coherent perfect absorption (CPA) effect of a thin MCT layer in HDVIP by using COMSOL Multiphysics^® 4.3b and optimized the structure of the loop-hole photodiode device. The CPA, which is formed by this structure, achieves high absorption of illumination in a very thin MCT film. It is demonstrated that an absorption rate of infrared radiation of more than 95% with a wavelength during the 8 µm–10 µm range can be achieved in Hg_1−xCd_xTe (x = 0.225) with a thickness of only 1.5 µm–3 µm. The benefit of thinner MCT film is that it decreases the dark current of pn junction and reduces the technical difficulty of etching and metallization of the loop-hole photodiode. Full article

4H-silicon carbide (4H-SiC) is a cornerstone for next-generation optoelectronic and power devices owing to its unparalleled thermal, electrical, and optical properties. However, its chemical inertness and low dopant diffusivity for most dopants have historically impeded effective doping. This study unveils a transformative laser-assisted boron doping technique for n-type 4H-SiC, employing a pulsed Nd:YAG laser (λ = 1064 nm) with a liquid-phase boron precursor. By leveraging a heat-transfer model to optimize laser process parameters, we achieved dopant incorporation while preserving the crystalline integrity of the substrate. A novel optical characterization framework was developed to probe laser-induced alterations in the optical constants—refraction index ($\mathrm{n}$) and attenuation index ($\mathrm{k}$)—across the MIDIR spectrum (λ = 3–5 µm). The optical properties pre- and post-laser doping were measured using Fourier-transform infrared spectrometry, and the corresponding complex refraction indices were extracted by solving a coupled system of nonlinear equations derived from single- and multi-layer absorption models. These models accounted for the angular dependence in the incident beam, enabling a more accurate determination of $\mathrm{n}$ and $\mathrm{k}$ values than conventional normal-incidence methods. Our findings indicate the formation of a boron-acceptor energy level at 0.29 eV above the 4H-SiC valence band, which corresponds to λ = 4.3 µm. This impurity level modulated the optical response of 4H-SiC, revealing a reduction in the refraction index from 2.857 (as-received) to 2.485 (doped) at λ = 4.3 µm. Structural characterization using Raman spectroscopy confirmed the retention of crystalline integrity post-doping, while secondary ion mass spectrometry exhibited a peak boron concentration of 1.29 × 10¹⁹ cm⁻³ and a junction depth of 450 nm. The laser-fabricated p–n junction diode demonstrated a reverse-breakdown voltage of 1668 V. These results validate the efficacy of laser doping in enabling MIDIR tunability through optical modulation and functional device fabrication in 4H-SiC. The absorption models and doping methodology together offer a comprehensive platform for paving the way for transformative advances in optoelectronics and infrared materials engineering. Full article

Photothermal catalytic CO₂ conversion into chemicals that provide added value represents a promising strategy for sustainable energy utilization, yet the development of highly efficient, stable, and selective catalysts remains a significant challenge. Herein, we report a rationally designed p-n junction heterostructure, T-CZ-PBA (SC), synthesized via controlled pyrolysis of high crystalline Prussian blue analogues (PBA) precursor, which integrates CuCo alloy, ZnO, N-doped carbon (NC), and Zn^II-Co^IIIPBA into a synergistic architecture. This unique configuration offers dual functional advantages: (1) the abundant heterointerfaces provide highly active sites for enhanced CO₂ and H₂ adsorption/activation, and (2) the engineered energy band structure optimizes charge separation and transport efficiency. The optimized T-C₃Z₁-PBA (SC) achieves exceptional photothermal catalytic performance, demonstrating a CO₂ conversion rate of 126.0 mmol gcat⁻¹ h⁻¹ with 98.8% CO selectivity under 350 °C light irradiation, while maintaining robust stability over 50 h of continuous operation. In situ diffuse reflectance infrared Fourier transform spectroscopy (in situ DRIFTS) investigations have identified COOH* as a critical reaction intermediate and elucidated that photoexcitation accelerates charge carrier dynamics, thereby substantially promoting the conversion of key intermediates (CO₂* and CO*) and overall reaction kinetics. This research provides insights for engineering high-performance heterostructured catalysts by controlling interfacial and electronic structures. Full article

The objective of the proposed work was to investigate the electrical performance of a 250 µm-thick 4H-SiC p-n junction detector after irradiation with DT neutrons (14.1 MeV energy) at high temperature (500 °C). The results showed that the current–voltage (I-V) characteristics of the unirradiated SiC detector were ideal, with an ideality factor close to 1.5. A high electron mobility (µ_n) and built-in voltage (V_bi) were also observed. Additionally, the leakage current remained very low in the temperature range of 298–523 K. High-temperature irradiation caused a deviation from ideal behaviour, leading to an increase in the ideality factor, decreases in the µ_n and V_bi values, and a significant rise in the leakage current. Studying the capacitance–voltage (C-V) characteristics, it was observed that neutron irradiation induced reductions in both Al-doped (p⁺-type) and N-doped (n⁻-type) 4H-SiC carrier concentrations. A comprehensive investigation of the deep defect states and impurities was carried out using deep-level transient spectroscopy (DLTS) in the temperature range of 85–750 K. In particular, high-temperature neutron irradiation influenced the behaviours of both the Z_1/2 and EH_6/7 traps, which were related to carbon interstitials, silicon vacancies, or anti-site pairs. Full article

Aflatoxin B1 (AFB1) and Ochratoxin A (OTA) are two of the most potent mycotoxins, recognized for their severe toxicity. In recent years, the consumption of bioactive substances has proven to be a valuable ally in combating their harmful effects on human health. For this purpose, this study evaluates the protective effects of fermented whey (FW) and pumpkin (P), as functional ingredients in bread, on duodenum tissue against sub-chronic toxicity induced by AFB1 and OTA. Nine groups of male and female Wistar rats (n = 5 per sex/group) were exposed to different combinations of AFB1, OTA, FW, and P for 28 days. The gene expression of apoptotic and antioxidant markers, including p53, Bax, Hmox1, NF-κB, and occludin, was measured by quantitative real-time PCR (RT-qPCR). AFB1 + OTA exposure led to an increased expression of p53 and NF-κB, with the downregulation of Bax and Hmox1. Occludin expression, which supports tight junction integrity, remained largely unaffected. Supplementation with FW and FW + P modulated gene expression favorably, offering protection against AFB1 and OTA toxicity. These bioactive components effectively mitigated oxidative stress and apoptosis in duodenal tissue. Notably, the results indicate that the protective effects of FW and P are not sex-dependent. These findings highlight the potential of FW and P as functional ingredients in combating the toxic effects of AFB1 and OTA in vivo. Full article

This study proposes an innovative design strategy for molybdenum disulfide (MoS₂) optoelectronic devices based on three-dimensional folded configurations. A “Z”-shaped folded MoS₂ device was fabricated through mechanical exfoliation combined with a pre-strain technique on elastic substrates. Experimental investigations reveal that the geometric folding deformation induces novel photocurrent response zones near folded regions beyond the Schottky junction area via band structure reconstruction, achieving triple polarity switching (negative–positive–negative–positive) of photocurrent. This breakthrough overcomes the single-polarity separation mechanism limitation in conventional planar devices. Scanning photocurrent microscopy demonstrates a 40-fold enhancement in photocurrent intensity at folded regions compared to flat areas, attributed to the optimization of carrier separation efficiency through a pn junction-like built-in electric field induced by the three-dimensional configuration. Voltage-modulation experiments show that negative bias (−150 mV) expands positive response regions, while +200 mV bias induces a global negative response, revealing a dynamic synergy between folding deformation and electric field regulation. Theoretical analysis identifies that the band bending and built-in electric field in folded regions constitutes the physical origin of multiple polarity reversals. This work establishes a design paradigm integrating “geometric deformation-band engineering” for regulating optoelectronic properties of two-dimensional materials, demonstrating significant application potential in programmable photoelectric sensing and neuromorphic devices. Full article