Search Results (177)

Grain boundaries are among the most influential structural features that control the charge transport in polycrystalline organic semiconductors. Acting as both charge trapping sites and electrostatic barriers, they disrupt molecular packing and introduce energetic disorder, thereby limiting carrier mobility, increasing threshold voltage, and degrading the stability of organic thin-film transistors (OTFTs). This review presents a detailed discussion of grain boundary formation, their impact on charge transport, and experimental strategies for engineering their structure and distribution across several high-mobility small-molecule semiconductors, including pentacene, TIPS pentacene, diF-TES-ADT, and rubrene. We explore grain boundary engineering approaches through solvent design, polymer additives, and external alignment methods that modulate crystallization dynamics and domain morphology. Then various case studies are discussed to demonstrate that optimized processing can yield larger, well-aligned grains with reduced boundary effects, leading to great mobility enhancements and improved device stability. By offering insights from structural characterization, device physics, and materials processing, this review outlines key directions for grain boundary control, which is essential for advancing the performance and stability of organic electronic devices. Full article

Printing techniques have been instrumental in developing flexible and stretchable electronics, including organic light-emitting diode displays, organic thin film transistor arrays, electronic skins, organic electrochemical transistors for biosensors and neuromorphic computing, as well as flexible solar cells with low-cost processes such as inkjet printing, ultrasonic nozzle, roll-to-roll coating. The rise of additive manufacturing provides even more opportunities to print electronics in automated and customizable ways. In this work, we will review the current technologies of printing electronics (including printed batteries, supercapacitors, fuel cells, and sensors), especially with 3D printing. In this age of ongoing AI revolution, the application of AI algorithms is discussed in terms of combining them with 3D printing and electronics printing for a future with automated optimization, sustainable design, and customizable and scalable manufacturing. Full article

Lignocellulosic biomass, a rich and underutilized source of lignin, presents considerable potential for advancing sustainable electronic materials. This review explores the lignin’s role in organic transistor-based devices, considering its integration into various components. It highlights lignin’s structural and chemical characteristics that influence its performance in such devices, along with key factors affecting its processability, interfacial behavior, and compatibility with existing organic electronic materials. By outlining current research directions and emerging applications, this work aims to provide a foundation for further exploration of lignin-based thin films in next-generation, green organic electronics. Full article

The advancement of portable high-definition organic light-emitting diode (OLED) displays necessitates thin film transistors (TFTs) with low power consumption and high pixel density. Amorphous indium gallium zinc oxide (a-IGZO) TFTs are promising candidates to meet these requirements. However, conventional silicon dioxide gate insulators provide limited channel modulation due to their low dielectric constant, while alternative high-k dielectrics often suffer from high leakage currents and poor surface quality. Plasma-enhanced atomic layer deposition (PEALD) enables the atomic-level control of film thickness, resulting in high-quality films with superior conformality and uniformity. In this work, a systematic investigation was conducted on the properties of HfO₂ films and the electrical characteristics of a-IGZO TFTs with different HfO₂ thicknesses. A Vth of −0.9 V, μ_sat of 6.76 cm²/Vs, SS of 0.084 V/decade, and I_on/I_off of 1.35 × 10⁹ are obtained for IGZO TFTs with 40 nm HfO₂. It is believed that the IGZO TFTs based on a HfO₂ gate insulating layer and prepared by PEALD can improve electrical performance. Full article

Optimizing charge transport in organic semiconductors is crucial for advancing next-generation optoelectronic devices. The performance of organic field-effect transistors (OFETs) is significantly influenced by the alignment of films in the channel direction and the quality of the dielectric surface, which should be uniform, smooth, and free of charge-trapping defects. Our study reports the enhancement of OFET performance using large-area, uniform, and oriented thin films of regioregular poly[3-hexylthiophene] (RR-P3HT), prepared via the Floating Film Transfer Method (FTM) on octadecyltrichlorosilane (OTS) passivated SiO₂ surfaces. SiO₂ surfaces inherently possess dangling bonds that act as charge traps, but these can be effectively passivated through optimized surface treatments. OTS treatment has improved the optical anisotropy of thin films and the surface wettability of SiO₂. Notably, using octadecene as a solvent during OTS passivation, as opposed to toluene, resulted in a significant enhancement of charge carrier transport. Specifically, passivation with OTS-F (10 mM OTS in octadecene at 100 °C for 48 h) led to a >150 times increase in mobility and a reduction in threshold voltage compared to OTS-A (5 mM OTS in toluene for 12 h at room temperature). Under optimal conditions, these FTM-processed RR-P3HT films achieved the best device performance, with a saturated mobility (μ_sat) of 0.18 cm²V⁻¹s⁻¹. Full article

This work explores the dispersed heterojunction of tris-(8-hydroxyquinoline) aluminum (AlQ₃) and 8-hydroxyquinoline zinc (ZnQ₂) with tetracyanoquinodimethane (TCNQ) and 2,6-diaminoanthraquinone (DAAq). Thin films of these organic semiconductors were deposited and analyzed, with their structures calculated with the B3PW91/6-31G** method. The optimized structure for AlQ₃-TCNQ, AlQ₃-DAAq, is achieved by means of three hydrogen bonds, whereas for ZnQ₂-DAAq, two hydrogen interactions are predicted. These structures were recalculated including the GD3 dispersion term. A stable ordering was also achieved for AlQ₃-TCNQ-GD3, AlQ₃-DAAq-GD3, and ZnQ₂-DAAq-GD3 with four and two hydrogen contacts for the former and the two latter, respectively. Infrared (IR) and UV-visible spectroscopy confirmed these theoretical predictions, in addition to obtaining the optical band gap for the films. The optical band gap values ranged between 1.62 and 2.97 eV (theoretical) and between 2.46 and 2.87 eV (experimental). Additional optical parameters and electrical behavior were obtained, which indicates the potential of the films to be used as organic semiconductors. All three films showed transmittance above 76%, which also broadens the range of applications in electrodes, transparent transistors, or photovoltaic cells. Devices fabricated using these materials displayed ohmic electrical behavior, with peak current values between 2 × 10⁻³ and 6 × 10⁻³ A. Full article

The growing burden of degenerative, cardiovascular, neurodegenerative, and cancerous diseases necessitates innovative approaches to improve our pathophysiological understanding and ability to modulate biological processes. Organic bioelectronics has emerged as a powerful tool in this pursuit, offering a unique ability to interact with biology due to the mixed ionic–electronic conduction and tissue-mimetic mechanical properties of conducting polymers (CPs). These materials enable seamless integration with biological systems across different levels of complexity, from monolayers to complex 3D models, microfluidic chips, and even clinical applications. CPs can be processed into diverse formats, including thin films, hydrogels, 3D scaffolds, and electrospun fibers, allowing the fabrication of advanced bioelectronic devices such as multi-electrode arrays, transistors (EGOFETs, OECTs), ion pumps, and photoactuators. This review examines the integration of CP-based bioelectronics in vivo and in in vitro microphysiological systems, focusing on their ability to monitor key biological events, including electrical activity, metabolic changes, and biomarker concentrations, as well as their potential for electrical, mechanical, and chemical stimulation. We highlight the versatility and biocompatibility of CPs and their role in advancing personalized medicine and regenerative therapies and discuss future directions for organic bioelectronics to bridge the gap between biological systems and electronic technologies. Full article

The continuous growth of energy-efficient electronic devices and compact systems has motivated researchers to develop TFTs based on p-type semiconductors. This review examines the developments in p-type thin-film transistors (TFTs) processed using solution methods to achieve integration with complementary metal–oxide–semiconductor technology. Improving organic p-type materials is critical for achieving advanced mobility and stability characteristics with suitable process integration. Scientists study these materials for use in wearable devices which display mechanical strength when fitted onto a curve. This review presents an exclusive discussion about the wide spectrum of applications which involve flexible displays and sensors, together with upcoming technologies such as artificial skin and flexible integrated circuits. The article examines present material challenges, along with device reliability and large-scale production methods, to give a thorough analysis of solution-processed p-type TFTs toward their broad implementation in upcoming electronic devices. By summarizing the developments and most recent studies in the field, this review aims to provide useful information regarding current research into and future trends of p-type TFTs. Full article

Pixel circuits are key components of flat panel displays, including liquid crystal displays (LCDs), organic light-emitting diode displays (OLEDs), and micro light-emitting diode displays (micro-LEDs). Depending on the active layer material of the thin film transistor (TFT), pixel circuits are categorised into amorphous silicon (a-Si) technology, low-temperature polycrystalline silicon (LTPS) technology, metal oxide (MO) technology, and low-temperature polycrystalline silicon and oxide (LTPO) technology. In this review, we outline the fundamental display principles and four major TFT technologies, covering conventional single-gated TFTs to novel two-gated TFTs. We focus on novel pixel circuits for three glass-based display technologies with additional mention of pixel circuits for silicon-based OLED and silicon-based micro-LED. Full article

Organic semiconductor materials are interesting due to their application in various organic electronics devices. [1]benzothieno[3,2-b][1]benzothiophene (BTBT) is a widely used building block for the creation of such materials. In this work, three novel solution-processable regioisomeric derivatives of BTBT—2,7-bis(3-octylthiophene-2-yl)BTBT (1), 2,7-bis(4-octylthiophene-2-yl)BTBT (2), and 2,7-bis(5-octylthiophene-2-yl)BTBT (3)—were synthesized and investigated. Their optoelectronic properties were characterized experimentally by ultraviolet–visible and fluorescence spectroscopy, time-resolved fluorimetry, and cyclic voltammetry and studied theoretically by Time-Dependent Density Functional Theory calculations. Their thermal properties were investigated by a thermogravimetric analysis, differential scanning calorimetry, polarizing optical microscopy, and in situ small-/wide-angle X-ray scattering measurements. It was shown that the introduction of alkyl substituents at different positions (3, 4, or 5) of thiophene moieties attached to a BTBT fragment significantly influences the optoelectronic properties, thermal stability, and phase behavior of the materials. Thin films of each compound were obtained by drop-casting, spin-coating and doctor blade techniques and used as active layers for organic field-effect transistors. All the OFETs exhibited p-channel characteristics under ambient conditions, while compound 3 showed the best electrical performance with a charge carrier mobility up to 1.1 cm²·V⁻¹s⁻¹ and current on/off ratio above 10⁷. Full article

The morphological characteristics of organic semiconductors significantly impact their performance in many applications of organic electronics. A list of challenges such as dendritic crystal formation, thermal cracks, grain boundaries, and mobility variations must be addressed to optimize their efficiency and stability. This paper provides an in-depth overview of how different polymer additives (conjugated, semicrystalline, and amorphous polymers) influence the crystallization, morphology and mobility of some well-studied organic semiconductors. Conjugated polymers enhance molecular alignment and crystallinity, leading to distinct crystalline structures and improved charge transport properties. Semicrystalline polymers offer in-situ crystallization control, which improves film morphology and increases crystallinity and mobility. Amorphous polymers help minimize misalignment and promote parallel orientation of organic crystals, which is critical for effective charge transport. Special attention is given to polystyrene (PS) as a representative additive in this review, which highlights the significant effects of its molecular weight (Mw) on film morphology and charge transport properties. In particular, low-Mw PS (less than 20k) typically results in smaller, more uniform crystals, and enhances both charge transport and interface quality. Medium-Mw PS (20k to 250k) balances film stability and crystallinity, with moderate improvements in both crystal size and mobility. High-Mw PS (greater than 250k) promotes larger crystalline domains, better long-range order, and more pronounced improvement in charge transport, although it may introduce challenges such as increased phase separation and reduced solubility. This comprehensive analysis underscores the decisive role of polymer additives in optimizing the morphology of organic semiconductors and maximizing their charge transport for next-generation organic electronic applications. Full article

Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm²/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture. Full article

This paper demonstrates the use of organic thin-film transistors (OTFTs) to drive active digital mini light-emitting diode (mini-LED) backlights, aiming to achieve exceptional display performance. Our findings reveal that OTFTs can effectively power mini-LED backlights, reaching brightness levels exceeding 100,000 nits. This approach not only enhances image quality but also improves energy efficiency. OTFTs offer a flexible and lightweight alternative to conventional silicon-based transistors, enabling innovative and versatile display designs. The integration of mini-LED technology with OTFTs produces displays with superior contrast ratios, enhanced color brightness, and lower power consumption. This technological advancement is poised to revolutionize high-dynamic-range (HDR) displays, including those in televisions, smartphones, and wearable devices, where the demand for high brightness and energy efficiency is paramount. Full article

This paper reviews the recent development of organic–inorganic hybrid dielectric materials for application as gate dielectrics in thin-film transistors (TFTs). These hybrid materials consist of the blending of high-k inorganic dielectrics with polymers, and their resulting properties depend on the amount and type of interactions between the organic and inorganic phases. The resulting amorphous networks, characterized by crosslinked organic and inorganic phases, can be tailored for specific applications, including gate dielectrics in TFTs. As dielectric materials, they offer a synergistic combination of high dielectric constants, low leakage currents, and mechanical flexibility, crucial for next-generation flexible electronics. Furthermore, organic–inorganic hybrid materials are easily processed in solution, allowing for low-temperature deposition compatible with flexible substrates. Various configurations of these hybrid gate dielectrics, such as bilayer structures and polymer nanocomposites, are discussed, with an emphasis on their potential to enhance device performance. Despite the significant advancements, challenges remain in optimizing the performance and stability of these hybrid materials. This review summarizes recent progress and highlights the advantages and emerging applications of low-temperature, solution-processed hybrid dielectrics, with a focus on their integration into flexible, stretchable, and wearable electronic devices. Full article

In active-matrix organic light-emitting diode (AMOLED) displays, conventional pixel circuits that compensate for the non-uniformity of the threshold voltage (V_T) of low-temperature polycrystalline silicon thin-film transistors (TFTs) can hardly compensate for variations in other TFT parameters, such as carrier mobility (μ₀), subthreshold swing (SS) and the various effects of parasitic capacitance. In recent high-resolution AMOLED displays, as the current required for OLED pixel driving decreases, the current error rate (CER) caused by the non-uniform TFT parameters increases. In this study, we analyzed the influence of each TFT parameter on the CER using SPICE simulation. Based on our analysis, the origin of the increased CER can be classified into two categories: the charging capability of driving TFT and the capacitive coupling effect of the switching TFT. The SS of the driving TFT and the parasitic capacitance of the switching TFT are major factors that affect the CER in terms of the charging capability and capacitive coupling effect, respectively. Our analysis results can be summarized as follows: The SS value of the driving TFT should be high, and its variation should be small to minimize the CER. The variation in the parasitic capacitance of the switching TFT possibly occurs due to long-term bias conditions, as well as process non-uniformity. Therefore, the stability of TFT should also be confirmed for the prevention of anomalous CER caused by long-term bias stress. Full article