Search Results (42)

Polarization management is a key technique in integrated photonic circuits. In this paper, a low loss and compact TE-pass polarizer based on lithium niobate on insulator (LNOI) platform is presented. By utilizing subwavelength grating (SWG) metamaterials and inverse design algorithm, the TE₀ mode propagates through the SWG region with minimal loss, while the TM₀ mode is efficiently coupled out and suppressed through shape-optimized algorithm, thereby achieving an expanded bandwidth of the polarization extinction ratio (PER). With a footprint of 66 μm, the polarizer exhibits low insertion loss (IL) < 0.174 dB and a PER > 10 dB over 176 nm (1465–1641 nm), reaching 33.2 dB at 1550 nm. Furthermore, the proposed polarizer demonstrates superior overall performance, along with promising potential for polarization management and mode conversion in high-performance LNOI-based integrated photonic systems. Full article

Lithium niobate (LiNbO₃, LN) is a multifunctional material with broad applicability in photonic and electronic devices. Recent advances in lithium niobate on insulator (LNOI) technology have significantly enhanced the integration density and miniaturization potential of LN-based platforms. Among the various fabrication techniques available, pulsed laser deposition (PLD) presents a cost-effective and versatile alternative to crystalline ion slicing (CIS), particularly advantageous for achieving high doping concentrations. However, a persistent challenge in PLD-grown lithium niobate film is cracking, primarily induced by the substantial thermal stress resulting from the mismatch in thermal expansion coefficients between LN and the substrate. In this study, we implemented a series of process modifications to address the cracking issue and successfully achieved crack-free LN films by introducing a lithium-deficient phase. This approach enabled the successful fabrication of highly Fe³⁺-doped LN films with a high electrical conductivity of 9.95 × 10⁻⁵ S/m while also exhibiting characteristic polarization switching behavior. These results demonstrate that PLD enables the fabrication of highly doped, structurally robust LN films and holds significant potential for the development of advanced electronic and optoelectronic devices. Full article

We investigate the influence of non-vertical sidewall angles on the band structure characteristics of thin-film lithium niobate (LN) photonic crystals (PhCs), considering both suspended LN membranes and LN on insulator (LNOI) configurations. Utilizing the gap-to-midgap ratio as a figure-of-merit, we observe a 34% reduction for a suspended LN PhC with 60° sidewall angles compared to the one with vertical sidewalls and a more substantial 73% reduction for LNOI PhCs with 70° sidewall angles. We address this challenge through the optimization of geometrical parameters of PhC unit cells with non-vertical sidewalls, taking fabrication feasibility into account. Our work provides a design guideline for the development of realistic LN PhC devices for future large-scale LN photonic circuits. Full article

To enhance the end-face coupling efficiency of lithium niobate on insulator (LNOI) chips, in conjunction with current device fabrication processes, a stepped spot size converter (SSC) based on a special outer envelope profile has been proposed and investigated. This stepped SSC can reduce the coupling loss between the LNOI waveguide and a normal single-mode optical fiber. First, the output waveguide of a mode converter was proposed and simulated, in which the mode field had the biggest overlapping integral factor with a single-mode fiber (MDF ≈ 9.8 μm). Then, a stepped LNOI waveguide, the basic structure of the mode converter, with three kinds of outer envelope profile, was proposed and analyzed. Through analysis of the impacts of different envelope profiles on mode spot conversion efficiency, the relationship between envelope profile and propagation efficiency was obtained. Additionally, the rule of LNOI stair height variation tendency and the pattern of mode spot conversion efficiency for the multi-step mode spot converter in LNOI were obtained. Ultimately, a stepped SSC with a COS-shaped envelope curve was adopted. When this stepped SSC is coupled to single-mode fiber with a mode-field diameter of 9.8 μm, the coupling efficiency of the TE mode was 95.35% at the wavelength of 1550 nm. Full article

With the ever-growing demand for high-speed optical communications, microwave photonics, and quantum key distribution systems, compact electro-optic (EO) modulators with high extinction ratios, large bandwidth, and high tuning efficiency are urgently pursued. However, most integrated lithium–niobate (LN) modulators cannot achieve these high performances simultaneously. In this paper, we propose an improved theoretical model of a chip-scale electro-optic (EO) microring modulator (EO-MRM) based on X-cut lithium–niobate-on-insulator (LNOI) with a hybrid architecture consisting of a 180-degree Euler bend in the coupling region, double-layer metal electrode structure, and ground–signal–signal–ground (G-S-S-G) electrode configuration, which can realize highly comprehensive performance and a compact footprint. After parameter optimization, the designed EO-MRM exhibited an extinction ratio of 38 dB. Compared to the structure without Euler bends, the increase was 35 dB. It also had a modulation bandwidth of 29 GHz and a tunability of 8.24 pm/V when the straight waveguide length was 100 μm. At the same time, the proposed device footprint was 1.92 × 10⁴ μm². The proposed MRM model provides an efficient solution to high-speed optical communication systems and microwave photonics, which is helpful for the fabrication of high-performance and multifunctional photonic integrated devices. Full article

The integration of a photodetector that converts optical signals into electrical signals is essential for scalable integrated lithium niobate photonics. Two-dimensional materials provide a potential high-efficiency on-chip detection capability. Here, we demonstrate an efficient on-chip photodetector based on a few layers of MoTe₂ on a thin film lithium niobate waveguide and integrate it with a microresonator operating in an optical telecommunication band. The lithium-niobate-on-insulator waveguides and micro-ring resonator are fabricated using the femtosecond laser photolithography-assisted chemical–mechanical etching method. The lithium niobate waveguide-integrated MoTe₂ presents an absorption coefficient of 72% and a transmission loss of 0.27 dB µm⁻¹ at 1550 nm. The on-chip photodetector exhibits a responsivity of 1 mA W⁻¹ at a bias voltage of 20 V, a low dark current of 1.6 nA, and a photo–dark current ratio of 10⁸ W⁻¹. Due to effective waveguide coupling and interaction with MoTe₂, the generated photocurrent is approximately 160 times higher than that of free-space light irradiation. Furthermore, we demonstrate a wavelength-selective photonic device by integrating the photodetector and micro-ring resonator with a quality factor of 10⁴ on the same chip, suggesting potential applications in the field of on-chip spectrometers and biosensors. Full article

Microwave photonics (MWP) applications often require a high optical input power (>100 mW) to achieve an optimal signal-to-noise ratio (SNR). However, conventional silicon spot-size converters (SSCs) are susceptible to high optical power due to the two-photon absorption (TPA) effect. To overcome this, we introduce a silicon nitride (SiN) SSC fabricated on a silicon-on-insulator (SOI) substrate. When coupled to a tapered fiber with a 4.5 μm mode field diameter (MFD), the device exhibits low coupling losses of <0.9 dB for TE modes and <1.4 dB for TM modes at relatively low optical input power. Even at a 1W input power, the additional loss is minimal, at approximately 0.1 dB. The versatility of the SSC is further demonstrated by its ability to efficiently couple to fibers with MFDs of 2.5 μm and 6.5 μm, maintaining coupling losses below 1.5 dB for both polarizations over the entire C-band. This adaptability to different mode diameters makes the SiN SSC a promising candidate for future electro-optic chiplets that integrate heterogeneous materials such as III-V for gain and lithium niobate for modulation with the SiN-on-SOI for all other functions using advanced packaging techniques. Full article

LNOI devices have emerged as prominent contributors to photonic integrated circuits (PICs), benefiting from their outstanding performance in electro-optics, acousto-optics, nonlinear optics, etc. Due to the physical properties and current etching technologies of LiNbO₃, slanted sidewalls are typically formed in LNOI waveguides, causing polarization-related mode hybridization and crosstalk. Despite the low losses achieved with fabrication advancements in LNOI, such mode hybridization and crosstalk still significantly limit the device performance by introducing polarization-related losses. In this paper, we propose a vertically etched LNOI construction. By improving the geometrical symmetry in the waveguides, vertical sidewalls could adequately mitigate mode hybridization in common waveguide cross sections. Taking tapers and bends as representatives of PIC components, we then conducted theoretical modeling and simulations, which showed that vertical etching effectively exempts devices from polarization-related mode crosstalk. This not only improves the polarization purity and input mode transmittance but also enables lower polarization-related losses within more compact structures. As a demonstration of fabrication feasibility, we innovatively proposed a two-step fabrication technique, and successfully fabricated waveguides with vertical sidewalls. Such vertical etching technology facilitates the development of next-generation high-speed modulators, nonlinear optical devices, and other advanced photonic devices with lower losses and a smaller footprint, driving further innovations in both academic research and industrial applications. Full article

With the rapid development of optical communication and quantum information, the demand for efficient and broadband nonlinear frequency conversion has increased. At present, most single-frequency conversion processes in lithium niobate on insulator (LNOI) waveguides suffer from lateral leakage without proper design, leading to an additional increase in propagation loss. Achieving broadband frequency conversion also encounters this problem in that there are no relevant works that have solved this yet. In this paper, we theoretically propose an efficient and flat broadband second harmonic generation (SHG) in silicon nitride loaded apodized chirped periodically poled LNOI waveguides. By using a bound states in the continuum (BICs) mechanism to reduce the propagation loss and utilizing the characteristic that the BICs are insensitive to wavelength, an ultra-low-loss wave band of 80 nm is realized. Then, by employing an apodized chirped design, a flat broadband SHG is achieved. The normalized conversion efficiency (NCE) is approximately 222%W⁻¹cm⁻², and the bandwidth is about 100 nm. Moreover, the presented waveguides are simple and can be fabricated without direct etching of lithium niobate, exhibiting excellent fabrication tolerance. Our work may open a new avenue for exploring low-loss and flat broadband nonlinear frequency conversion on various on-chip integrated photonic platforms. Full article

The key components of a polarization-independent electro-optic (EO) interferometer, including the beam splitter, mode converter, and directional coupler, are designed based on a lithium niobate (LN) platform on an integrated insulator to ensure high extinction ratios. By elaborately designing the geometric structure of the multimode interference (MMI) coupler, beam splitting of equal proportions and directional coupling of higher-order modes are realized. The most prominent characteristic of the proposed interferometer is polarization insensitivity, which is realized by converting TM polarization into TE polarization using a mode converter, providing conditions for the study of light with different polarizations. At 1550 nm, the visibility of the interferometer is 97.59% and 98.16% for TE and TM, respectively, demonstrating the high performance of the proposed LN polarization-independent interferometer. Full article

Periodically poled lithium niobate on insulator (PPLNOI) offers an admirably promising platform for the advancement of nonlinear photonic integrated circuits (PICs). In this context, domain inversion engineering emerges as a key process to achieve efficient nonlinear conversion. However, periodic poling processing of thin-film lithium niobate has only been realized on the chip level, which significantly limits its applications in large-scale nonlinear photonic systems that necessitate the integration of multiple nonlinear components on a single chip with uniform performances. Here, we demonstrate a wafer-scale periodic poling technique on a 4-inch LNOI wafer with high fidelity. The reversal lengths span from 0.5 to 10.17 mm, encompassing an area of ~1 cm² with periods ranging from 4.38 to 5.51 μm. Efficient poling was achieved with a single manipulation, benefiting from the targeted grouped electrode pads and adaptable comb line widths in our experiment. As a result, domain inversion is ultimately implemented across the entire wafer with a 100% success rate and 98% high-quality rate on average, showcasing high throughput and stability, which is fundamentally scalable and highly cost-effective in contrast to traditional size-restricted chiplet-level poling. Our study holds significant promise to dramatically promote ultra-high performance to a broad spectrum of applications, including optical communications, photonic neural networks, and quantum photonics. Full article

Recently, thin-film lithium niobate electro-optical modulators have developed rapidly and have become the core solution for the next generation of electro-optical problems. Compared with bulk lithium niobate modulators, these modulators not only retain the advantages of lithium niobate materials, such as low loss, high extinction ratio, high linear response and high optical power handling capabilities, but can also effectively improve some performance parameters, such as the voltage bandwidth performance of the modulator. Unfortunately, the extremely small electrode gap of thin-film lithium niobate EO (electro-optic) modulators causes metal absorption, resulting in higher microwave losses. The electro-optical performance of the modulator, thus, deteriorates at high frequencies. We designed traveling-wave electrodes with microstructures to overcome this limitation and achieve a 3 dB electro-optical bandwidth of 51.2 GHz. At the same time, we maintain low on-chip losses of <2 dB and a high extinction ratio of 15 dB. It is important to note that the devices we manufactured were metal-encapsulated and passed a series of reliability tests. The success of this modulator module marks a key step in the commercialization and application of thin-film lithium niobate modulation devices. Full article

Quantum transducers are key components for hybrid quantum networks, enabling the transfer of quantum states between microwave and optical photons. In the quantum community, many efforts have focused on creating and verifying the entanglement between microwave and optical fields in systems that typically operate at temperatures in the millikelvin range. Our goal is to develop an integrated microwave optical entanglement device based on a lithium niobate whispering gallery mode resonator (WGMR). To investigate the feasibility of developing such an integrated device, first, a passive photonic integrated circuit (PIC) was designed, fabricated, and characterized. The PIC was developed on a thin-film lithium niobate (TFLN) on an insulator platform, and it includes eight ring resonators and four asymmetric Mach–Zehnder interferometers. This paper presents the design and operational principles of the integrated device for microwave–optical entanglement, as well as the results of the characterization of the passive PIC. Full article

In this study, one-dimensional grating coupler on single-crystal lithium niobate thin film (lithium niobate on insulator, LNOI) that also served as a polarization splitter was designed. The coupler could separate both orthogonal polarization states into two opposite directions while coupled light from a standard single-mode fiber to a waveguide on LNOI at the same time. Using segmented and apodized designing, the peak coupling efficiencies (CEs) around telecommunication wavelength 1550 nm for fundamental TE and TM modes of −2.82 dB and −2.83 dB, respectively, were achieved. The CEs could be optimized to −1.97 dB and −1.8 dB when a metal layer was added below the silicon dioxide layer. Full article

A simple microwave photonic, reconfigurable, instantaneous frequency measurement system based on low-voltage thin-film lithium niobate on an insulator phase modulator is put forward and experimentally demonstrated. Changing the wavelength of the optical carrier can realize the flexibility of the frequency measurement range and accuracy, showing that during the ranges of 0–10 GHz, 3–15 GHz, and 12–18 GHz, the average measurement errors are 26.9 MHz, 44.57 MHz, and 13.6 MHz, respectively, thanks to the stacked integrated learning models. Moreover, this system is still able to respond to microwave signals of as low as −30 dBm with the frequency measurement error of 62.06 MHz, as that low half-wave voltage for the phase modulator effectively improves the sensitivity of the system. The general-purpose, miniaturized, reconfigurable, instantaneous frequency measurement modules have unlimited potential in areas such as radar detection and early warning reception. Full article