Search Results (45)

To meet the requirements for radar echo acquisition and feature extraction from stratified media and rough-surfaced targets, a vehicle was geometrically modelled in CAD. Monte Carlo techniques were applied to generate the rough interfaces at air–snow and snow–soil boundaries and over the vehicle surface. Soil complex permittivity was characterized with a four-component mixture model, while snow permittivity was described using a mixed-media dielectric model. The composite electromagnetic scattering from a rough-surfaced vehicle on snow-covered soil was then analyzed with the finite-difference time-domain (FDTD) method. Parametric studies examined how incident angle and frequency, vehicle orientation, vehicle surface root mean square (RMS) height, snow liquid water content and depth, and soil moisture influence the composite scattering coefficient. Results indicate that the coefficient oscillates with scattering angle, producing specular reflection lobes; it increases monotonically with larger incident angles, higher frequencies, greater vehicle RMS roughness, and higher snow liquid water content. By contrast, its dependence on snow thickness, vehicle orientation, and soil moisture is complex and shows no clear trend. Full article

Accurate solar background noise modeling in island-reef LiDAR surveys is hindered by anisotropic coastal reflectivity and dynamic light paths, which isotropic models fail to address. We propose BNR-B, a bidirectional reflectance distribution function (BRDF)-based noise model that integrates solar-receiver geometry with micro-facet scattering dynamics. Validated via single-photon LiDAR field tests on diverse coastal terrains at Jiajing Island, China, BNR-B reveals the following: (1) Solar zenith/azimuth angles non-uniformly modulate noise fields—higher solar zenith angles reduce noise intensity and homogenize spatial distribution; (2) surface reflectivity linearly correlates with noise rate (R² > 0.99), while roughness governs scattering directionality through micro-facet redistribution. BNR-B achieves 28.6% higher noise calculation accuracy than Lambertian models, with a relative phase error < 2% against empirical data. As the first BRDF-derived solar noise correction framework for coastal LiDAR, it addresses critical limitations of isotropic assumptions by resolving directional noise modulation. The model’s adaptability to marine–terrestrial interfaces enhances precision in coastal monitoring and submarine mapping, offering transformative potential for geospatial applications requiring photon-counting LiDAR in complex environments. Key innovations include dynamic coupling of geometric optics and surface scattering physics, enabling robust spatiotemporal noise quantification, critical for high-resolution terrain reconstruction. Full article

Graded-interfaces modeling unveils key features of high-power, high-efficiency quantum-cascade lasers (QCLs): direct resonant-tunneling injection from a prior-stage, low-energy state into the upper-laser (ul) level, over a wide (~50 nm) multiple-barrier region; and a new type of photon-induced carrier transport (PICT). Stage-level QCL operation primarily involves two steps: injection into the ul level and photon-assisted diagonal transition. Furthermore, under certain conditions, a prior-stage low-energy state, extending deep into the next stage, is the ul level, thus making such devices injectionless QCLs and leading to stronger PICT action due to quicker gain recovery. Thermalization within a miniband ensures population inversion between a state therein and a state in the next miniband. Using graded-interfaces modeling, step-tapered active-region (STA) QCLs possessing PICT action have been designed for carrier-leakage suppression. A preliminary 4.6 µm emitting STA design of a metal–organic chemical-vapor deposition (MOCVD)-grown QCL led to an experimental 19.1% front-facet, peak wall-plug efficiency (WPE). Pure, diffraction-limited beam operation is obtained at 1.3 W CW power. A low-leakage 4.7 µm emitting design provides a projected 24.5% WPE value, considering MOCVD-growth, graded-interface interface-roughness (IFR) parameters, and waveguide loss (α_w). The normalized leakage-current density, J_leak/J_th, is 17.5% vs. 28% for the record-WPE 4.9 µm emitting QCL. Then, when considering the IFR parameters and α_w values of optimized-crystal-growth QCLs, J_leak/J_th decreases to 13.5%, and the front-facet WPE value reaches 33%, thus approaching the ~41% fundamental limit. The potential of graded-interfaces modeling to become the design tool for achieving room-temperature operation of terahertz QCLs is discussed. Full article

The annealing process is one of the most common methods used to study the thermal stability of multilayers. To study the effect of the annealing process on the microstructural variation in NiV/B₄C multilayers, different annealing experiments were performed on NiV/B₄C multilayers with a d-spacing of 8 nm. This work provides a foundation for the fabrication of non-periodic NiV/B₄C multilayers. The NiV/B₄C multilayers were investigated by grazing-incidence X-ray reflectometry (GIXR), X-ray diffuse scattering (XRS), atomic force microscopy (AFM), X-ray diffraction (XRD), grazing-incidence small-angle X-ray scattering (GISAXS) and transmission electron microscopy (TEM). The temperature-dependent experiments showed that annealing at 70–290 °C slightly increased the period thickness and interface width. Annealing at higher temperatures resulted in significant structural changes and thickness ratio (Г = d_NiV/d) changes from 0.4 to 1/3 at 340 °C. The time-dependent results showed that the microstructural variations primarily occurred after 60 min. The XRD, XRS, GISAXS and TEM were further used to study microstructural changes. It was found that the NiV/B₄C multilayers exhibited a microcrystal structure after annealing, and that enhanced crystallinity and an increase in interface roughness were the main reasons for the microstructural changes. Full article

This study focuses on long concrete interfaces tested under cyclic actions, fastened with post-installed industrial steel screws. The overall behavior and the effect of roughness were investigated in three long interfaces, representative of connections between, e.g., a slab and a wall, a beam and a wall, etc. The results were compared with those of short interfaces tested by the authors in previous campaigns. It was observed that rough long interfaces activate their maximum resistance at small values of imposed shear slip. When roughness was reduced, the maximum resistance was also reduced, the corresponding shear slip was increased, and the overall behavior was stable. For large values of the shear slip, imposed at one end of the interface, the shear slips along it tended to be uniform, both in short and long interfaces. The limited embedment length of the screws led to their pronounced pullout. Finally, the asymmetry of resistance between the two loading directions that was observed in short interfaces was alleviated in the long ones, where also the scatter of the results was limited among duplicate specimens. Full article

This investigation explores the structural and electronic properties of low-temperature-grown (InAs)₄(GaAs)₃/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)₄(GaAs)₃ short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm²/V.s. The reason for the higher mobility of (InAs)₄(GaAs)₃/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas. Full article

The functionality and reliability of nanoscale multilayer devices and components are influenced by changes in stress and microstructure throughout fabrication, processing, and operation. NiV/B₄C multilayers with a d-spacing of 3 nm were prepared by magnetron sputtering, and two groups of annealing experiments were performed. The stress, microstructure, and interface changes in NiV/B₄C after annealing were investigated by grazing-incidence X-ray reflectometry (GIXR), grazing-incidence X-ray diffraction (GIXRD), X-ray diffuse scattering, and grazing-incidence small-angle X-ray scattering (GISAXS). The temperature dependence experiments revealed a gradual shift in the multilayer stress from compression to tension during annealing from 70 °C to 340 °C, with the stress approaching near-zero levels between 70 °C and 140 °C. The time-dependent experiments indicated that most of the stress changes occurred within the initial 10 min, which showed that prolonged annealing was unnecessary. Combining the X-ray diffraction and X-ray scattering measurements, it was found that the changes in the thickness, interface roughness, and lateral correlation length, primarily due to crystallization, drove the changes in stress and microstructure. Full article

The binary metal oxide mesoporous interfacial layers (bi-MO meso IF layer) templated by a graft copolymer are synthesized between a fluorine-doped tin oxide (FTO) substrate and nanocrystalline TiO₂ (nc-TiO₂). Amphiphilic graft copolymers, Poly(epichlorohydrin)-graft-poly(styrene), PECH-g-PS, were used as a structure-directing agent, and the fabricated bi-MO meso IF layer exhibits good interconnectivity and high porosity. Even if the amount of ZnO in bi-MO meso IF layer increased, it was confirmed that the morphology and porosity of the bi-MO meso IF layer were well-maintained. In addtion, the bi-MO meso IF layer coated onto FTO substrates shows higher transmittance compared with a pristine FTO substrate and dense-TiO₂/FTO, due to the reduced surface roughness of FTO. The overall conversion efficiency (η) of solid-state photovoltaic cells, dye-sensitized solar cells (DSSCs) fabricated with nc-TiO₂ layer/bi-MO meso IF layer TZ1 used as a photoanode, reaches 5.0% at 100 mW cm⁻², which is higher than that of DSSCs with an nc-TiO₂ layer/dense-TiO₂ layer (4.2%), resulting from enhanced light harvesting, good interconnectivity, and reduced interfacial resistance. The cell efficiency of the device did not change after 15 days, indicating that the bi-MO meso IF layer with solid-state electrolyte has improved electrode/electrolyte interface and electrochemical stability. Additionally, commercial scattering layer/nc-TiO₂ layer/bi-MO meso IF layer TZ1 photoanode-fabricated solid-state photovoltaic cells (DSSCs) achieved an overall conversion efficiency (η) of 6.4% at 100 mW cm⁻². Full article

Microwave and infrared–thermal radiation-compatible shielding fabrics represent an important direction in the development of wearable protective fabrics. Nevertheless, effectively and conveniently integrating compatible shielding functions into fabrics while maintaining breathability and moisture permeability remains a significant challenge. Here, we take hydrophilic PVA-co-PE nanofibrous film-coated PET fabric (NFs/PET) as a flexible substrate and deposit a dielectric/conductive (SiO₂/Al) bilayer film via magnetron sputtering. This strategy endows the fabric surface with high electrical conductivity, nanoscale roughness comparable to visible and infrared waves, and a dielectric–metal contact interface possessing localized plasmon resonance and Mie scattering effects. The results demonstrate that the optimized SiO₂/Al/NFs/PET composite conductive fabric (referred to as S4-1) possesses favorable X-band electromagnetic interference (EMI) shielding effectiveness (50 dB) as well as excellent long-wave infrared (LWIR) shielding or IR stealth performance (IR emissivity of 0.60). Notably, the S4-1 fabric has a cooling effect of about 12.4 °C for a heat source (80 °C) and an insulating effect of about 17.2 °C for a cold source (−20 °C), showing excellent shielding capability for heat conduction and heat radiations. Moreover, the moisture permeability of the S4-1 fabric is about 300 g/(m²·h), which is better than the requirement concerning moisture permeability for wearable fabrics (≥2500–5000 g/(m²·24 h)), indicating excellent heat and moisture comfort. In short, our fabrics have lightweight, thin, moisture-permeable and excellent shielding performance, which provides novel ideas for the development of wearable multi-band shielding fabrics applied to complex electromagnetic environments. Full article

The problem of sound propagation in a shallow sea with a rough sea bottom is considered. A random matrix approach for studying sound scattering by the water–bottom interface inhomogeneities is developed. This approach is based on the construction of a statistical ensemble of the propagator matrices that describe the evolution of the wavefield in the basis of normal modes. A formula for the coupling term corresponding to inter-mode transitions due to scattering by the sea bottom is derived. The Weisskopf–Wigner approximation is utilized for the coupling between waterborne and sediment modes. A model of a waveguide with the bottom roughness described by the stochastic Ornstein–Uhlenbeck process is considered as an example. Range dependencies of mode energies, modal cross coherences and scintillation indices are computed using Monte Carlo simulations. It is shown that decreasing the roughness correlation length enhances mode coupling and facilitates sound scattering. Full article

Surface Plasmonic Resonance (SPR) induced by metallic nanoparticles can be exploited to enhance the response of photodetectors (PD) to a large degree. Since the interface between metallic nanoparticles and semiconductors plays an important role in SPR, the magnitude of the enhancement is highly dependent on the morphology and roughness of the surface where the nanoparticles are distributed. In this work, we used mechanical polishing to produce different surface roughnesses for the ZnO film. Then, we exploited sputtering to fabricate Al nanoparticles on the ZnO film. The size and spacing of the Al nanoparticles were adjusted by sputtering power and time. Finally, we made a comparison among the PD with surface processing only, the Al-nanoparticles-enhanced PD, and the Al-nanoparticles-enhanced PD with surface processing. The results showed that increasing the surface roughness could enhance the photo response due to the augmentation of light scattering. More interestingly, the SPR induced by the Al nanoparticles could be strengthened by increasing the roughness. The responsivity could be enlarged by three orders of magnitude after we introduced surface roughness to boost the SPR. This work revealed the mechanism behind how surface roughness influences SPR enhancement. This provides new means for improving the photo responses of SPR-enhanced photodetectors. Full article

In this study, we investigated the temperature dependencies of the total, crystal lattice, and electronic thermal conductivities in films of topological insulators p–Bi_0.5Sb_1.5Te₃ and p–Bi₂Te₃ formed by discrete and thermal evaporation methods. The largest decrease in the lattice thermal conductivity because of the scattering of long-wavelength phonons on the grain interfaces was observed in the films of the solid-solution p–Bi_0.5Sb_1.5Te₃ deposited by discrete evaporation on the amorphous substrates of polyimide without thermal treatment. It was shown that in the p–Bi_0.5Sb_1.5Te₃ films with low thermal conductivity, the energy dependence of the relaxation time is enhanced, which is specific to the topological insulators. The electronic thermal conductivity was determined by taking into account the effective scattering parameter in the relaxation time approximation versus energy in the Lorentz number calculations. A correlation was established between the thermal conductivity and the peculiarities of the morphology of the interlayer surface (0001) in the studied films. Additionally, the total κ and the lattice κ_L thermal conductivities decrease, while the number of grains and the roughness of the surface (0001) increase in unannealed films compared to annealed ones. It was demonstrated that increasing the thermoelectric figure of merit ZT in the p–Bi_0.5Sb_1.5Te₃ films formed by discrete evaporation on a polyimide substrate is determined by an increase in the effective scattering parameter in topological insulators due to enhancement in the energy dependence of the relaxation time. Full article

A Ag:AZO electrode was used as an electrode for a self-powered solar-blind ultraviolet photodetector based on a Ag₂O/β-Ga₂O₃ heterojunction. The Ag:AZO electrode was fabricated by co-sputtering Ag and AZO heterogeneous targets using the structural characteristics of a Facing Targets Sputtering (FTS) system with two-facing targets, and the electrical, crystallographic, structural, and optical properties of the fabricated thin film were evaluated. A photodetector was fabricated and evaluated based on the research results that the surface roughness of the electrode can reduce the light energy loss by reducing the scattering and reflectance of incident light energy and improving the trapping phenomenon between interfaces. The thickness of the electrodes was varied from 20 nm to 50 nm depending on the sputtering time. The optoelectronic properties were measured under 254 nm UV-C light, the on/off ratio of the 20 nm Ag:AZO electrode with the lowest surface roughness was 2.01 × 10⁸, and the responsivity and detectivity were 56 mA/W and 6.99 × 10¹¹ Jones, respectively. The Ag₂O/β-Ga₂O₃-based solar-blind photodetector with a newly fabricated top electrode exhibited improved response with self-powered characteristics. Full article

This work investigates a self-masking technology for roughening the surface of light-emitting diodes (LEDs). The carbonized photoresist with a naturally nano/micro-textured rough surface was used as a mask layer. After growing the Si₃N₄ passivation layer on LEDs, the texture pattern of the mask layer was transferred to the surface of the passivation layer via reactive ion beam (RIE) dry etching, resulting in LEDs with nano-textured surfaces. This nano-textured surface achieved by self-masking technology can alleviate the total internal reflection at the top interface and enhance light scattering, thereby improving the light extraction efficiency. As a result, the wall-plug efficiency (WPE) and external quantum efficiency (EQE) of rough-surface LEDs reached 53.9% and 58.8% at 60 mA, respectively, which were improved by 10.3% and 10.5% compared to that of the flat-surface Si₃N₄-passivated LED. Additionally, at the same peak, both LEDs emit a wavelength of 451 nm at 350 mA. There is also almost no difference between the I–V characteristics of LEDs before and after roughening. The proposed self-masking surface roughening technology provides a strategy for LEE enhancement that is both cost-effective and compatible with conventional fabrication processes. Full article

The Mo/Si multilayer mirror has been widely used in EUV astronomy, lithography, microscopy and other fields because of its high reflectivity at the wavelength around 13.5 nm. During the fabrication of Mo/Si multilayers on large, curved mirrors, shadow mask was a common method to precisely control the period thickness distribution. To investigate the effect of shadow mask on the microstructure of Mo/Si multilayers, we deposited a set of Mo/Si multilayers with and without the shadow mask on a curved substrate with aperture of 200 mm by direct current (DC) magnetron sputtering in this work. Grazing incidence X-ray reflectivity (GIXR), diffuse scattering, atomic force microscope (AFM) and X-ray diffraction (XRD) were used to characterize the multilayer structure and the EUV reflectivity were measured at the National Synchrotron Radiation Laboratory (NSRL) in China. By comparing the results, we found that the layer microstructure including interface width, surface roughness, layer crystallization and the reflectivity were barely affected by the mask and a high accuracy of the layer thickness gradient can be achieved. Full article