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Search Results (11,825)

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23 pages, 6248 KB  
Article
Multi-Point Laser Detection Device for Ground Hazards in Blind Mobility
by Issa Berthe, Lucas Bogaert, Liam Jordan, Julien Donnez, Clément Favey and René Farcy
Sensors 2026, 26(8), 2396; https://doi.org/10.3390/s26082396 - 14 Apr 2026
Abstract
This article examines hazardous ground irregularities that remain undetectable by the white cane used by visually impaired individuals. Additionally, the development of a multi-beam laser ranging system is described. Integrated into the cane handle, this system is designed to provide comprehensive ground awareness [...] Read more.
This article examines hazardous ground irregularities that remain undetectable by the white cane used by visually impaired individuals. Additionally, the development of a multi-beam laser ranging system is described. Integrated into the cane handle, this system is designed to provide comprehensive ground awareness and sufficient anticipation at a walking speed of 1 m/s. The system employs a near-infrared multi-beam laser sensor with a holographic grating generating four diamond-shaped beams, in conjunction with a high-resolution CMOS sensor. Through optical triangulation and real-time processing, the device estimates the height of obstacles or drop-offs relative to the walking surface. Vibrotactile feedback informs the user of detected hazards, with distinct vibration patterns differentiating between elevation changes and drop-offs. Preliminary trials with blind participants in controlled environments demonstrate that the system is feasible, responsive, energy-efficient, and fully compatible with conventional white cane use. Full article
(This article belongs to the Section Optical Sensors)
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35 pages, 1938 KB  
Review
Ubiquitous Computing and Smart Systems in the Treatment of Psychiatric and Neurological Disorders—A Narrative Review
by Dariusz Mikołajewski, Emilia Mikołajewska, Jolanta Masiak, Ewelina Panas and Urszula Rogalla-Ładniak
Electronics 2026, 15(8), 1627; https://doi.org/10.3390/electronics15081627 - 14 Apr 2026
Abstract
This bibliometric study examines the role of ubiquitous computing and intelligent systems in the treatment of mental and neurological disorders. Ubiquitous computing integrates computational intelligence into everyday environments, enabling seamless monitoring and support of patients. Intelligent systems, including wearable devices, environmental sensors, and [...] Read more.
This bibliometric study examines the role of ubiquitous computing and intelligent systems in the treatment of mental and neurological disorders. Ubiquitous computing integrates computational intelligence into everyday environments, enabling seamless monitoring and support of patients. Intelligent systems, including wearable devices, environmental sensors, and mobile health applications, collect real-time data on behavior, physiology, and environmental factors. These systems support early detection of symptom changes, adherence to treatment, and crisis prediction through context-aware analysis. Artificial intelligence (AI) processes the collected data to generate personalized therapeutic feedback and notify healthcare providers when intervention is needed. In mental health care, intelligent environments can monitor mood, sleep, and social interaction patterns, providing valuable objective information about mental health status. In the case of neurological conditions such as Parkinson’s disease or epilepsy, intelligent systems facilitate movement tracking, seizure detection, and cognitive assessment outside of the clinical setting. Integration with electronic health records and telemedicine platforms ensures coordinated and responsive care. Ethical design, privacy protection, and patient consent remain key to successful implementation. In this way, ubiquitous computing is transforming care models by increasing autonomy, precision, and continuity in the treatment of complex neurodegenerative diseases, including those related to neurodegeneration in aging. Full article
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15 pages, 3662 KB  
Article
Cellular and Molecular Profiling of Native Heart Valves in Infective Endocarditis: A Comparative Study with Calcific Aortic Valve Disease
by Anna Sinitskaya, Maria Khutornaya, Alyona Poddubnyak, Maxim Asanov, Alexander Kostyunin, Alexey Tupikin, Marsel Kabilov and Maxim Sinitsky
Biomedicines 2026, 14(4), 890; https://doi.org/10.3390/biomedicines14040890 - 14 Apr 2026
Abstract
Background: Infective endocarditis (IE) affects both native and prosthetic heart valves, the endocardial surface, as well as cardiac implantable electronic devices. Identifying specific IE biomarkers for its early risk stratification remains crucial, particularly in cases with blood culture-negative endocarditis. Methods: Eleven native heart [...] Read more.
Background: Infective endocarditis (IE) affects both native and prosthetic heart valves, the endocardial surface, as well as cardiac implantable electronic devices. Identifying specific IE biomarkers for its early risk stratification remains crucial, particularly in cases with blood culture-negative endocarditis. Methods: Eleven native heart valves obtained from IE and calcific aortic valve disease (CAVD) patients were analyzed. Immunohistochemical analysis of a pan-leukocyte marker (CD45), macrophage marker (CD68), T-lymphocyte marker (CD3), B-lymphocyte marker (CD19), neutrophil myeloperoxidase (MPO), and marker of vascular endothelial cells (CD31) was performed. Differentially expressed genes (DEGs) were identified by whole-transcriptome sequencing; proteomic profiling was performed by dot-blotting. Results: The immunophenotyping demonstrates the infiltration of macrophages and neutrophils, as well as occasional T-lymphocytes in the IE-affected aortic valves, and the CAVD-affected heart valves were characterized by the absence of neutrophils. For the whole-transcriptome sequencing, 157 DEGs were identified: 124 DEGs were upregulated, and 33 genes were downregulated in the IE-affected heart valves compared to the CAVD-affected ones. According to the dot-blotting, 35 cytokines were identified in the studied heart valves, but only 21 molecules were expressed in both IE and CAVD-affected heart valves. Analysis of proteases and their inhibitors allowed the identification of 13 protease molecules and 18 enzyme inhibitor molecules in all examined heart valves. Conclusions: The results of the present study can help to improve our understanding of the IE pathogenesis. In addition, we identified the candidate cellular and molecular-genetic features of IE-affected native heart valves. Full article
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9 pages, 507 KB  
Opinion
Device-Detected Atrial Fibrillation: Why Time-Based Thresholds Are No Longer Fit for Purpose
by Ahmed El-Medany
J. Clin. Med. 2026, 15(8), 2961; https://doi.org/10.3390/jcm15082961 - 14 Apr 2026
Abstract
Advances in implantable and wearable cardiac monitoring technologies have led to widespread detection of brief, often asymptomatic atrial high-rate episodes, frequently labelled as device-detected atrial fibrillation (AF). While detection has increased substantially, the clinical interpretation of these findings remains uncertain. Observational studies demonstrate [...] Read more.
Advances in implantable and wearable cardiac monitoring technologies have led to widespread detection of brief, often asymptomatic atrial high-rate episodes, frequently labelled as device-detected atrial fibrillation (AF). While detection has increased substantially, the clinical interpretation of these findings remains uncertain. Observational studies demonstrate associations between AF burden and stroke risk but reveal marked inter-individual heterogeneity and no consistent temporal threshold below which risk is eliminated. Recent randomised controlled trials show that anticoagulation guided solely by arrhythmia duration confers limited net clinical benefit, with modest reductions in ischaemic stroke offset by increased bleeding. These findings challenge the biological and clinical validity of rigid time-based thresholds for intervention. Increasing evidence suggests that AF may act primarily as a marker of underlying atrial disease rather than the sole mechanistic cause of thromboembolism. This article provides an evidence-informed perspective on the interpretation of device-detected AF in contemporary clinical practice and argues for a shift away from duration-based triggers toward a longitudinal, risk-adapted approach that integrates AF trajectory, atrial substrate, and clinical context. Emerging tools such as artificial intelligence-enhanced electrocardiography may help identify occult atrial pathology but must augment rather than replace clinical judgement. Proportionate, individualised care should supersede reflexive treatment strategies in the management of device-detected AF. Full article
(This article belongs to the Special Issue Clinical Updates and Perspectives in Atrial Fibrillation)
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39 pages, 3657 KB  
Review
Paralleling of Gallium Nitride Power Semiconductor Devices: A Review and Future Perspectives
by Vijay Kumar Singh and Ravi Nath Tripathi
Electronics 2026, 15(8), 1607; https://doi.org/10.3390/electronics15081607 - 13 Apr 2026
Abstract
Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance [...] Read more.
Wide-bandgap (WBG) semiconductors are propelling a paradigm shift in advanced power electronics, offering functionality that includes higher-switching-frequency operation with improved efficiency and power density possibilities. Gallium nitride (GaN) exhibits unique material properties that correspond to device parameters beneficial for achieving an improved performance compared to its counterparts. The inception of GaN power semiconductor devices has enabled advanced power electronics to realize efficient and compact power converters. However, the current rating of the devices is constrained, and paralleling of the devices is vital to realize high-currentrated power modules. Furthermore, paralleling of the devices can provide improved cooling results in high-power-density systems. This paper presents a comprehensive review study of the paralleling of GaN devices to discuss the different challenges associated with paralleling. One of the fundamental challenges is associated with the design of a structure for paralleling GaN devices. The parallel device structure consequently impacts the parasitics of the device, which limit the operating switching frequency and thermo-mechanical aspects. Furthermore, power loop inductance, gate loop inductance asymmetry, common-source inductance, gate inductance trace length mismatch, and different challenges lead to design trade-offs and efforts to optimize the design by realizing an appropriate trade-off, considering low-inductance packaging along with thermal strategies, and considering a parallel circuit layout and structure. Considering the recent research trends and studies related to the design of parallel GaN devices, this paper presents future perspectives anticipating the realization of an improved parallel GaN device structure. Full article
(This article belongs to the Section Power Electronics)
17 pages, 21460 KB  
Article
Effect of Heating Temperature on the Pitting Corrosion Behavior of Stainless Steel Tubes in Simulated Tap Water
by Shen Chen, Xinyu Jin, Jiangwei Yu, Zhong Yin and Moucheng Li
Metals 2026, 16(4), 420; https://doi.org/10.3390/met16040420 - 12 Apr 2026
Viewed by 59
Abstract
A corrosion device was established to simulate the service environment of stainless steel heat exchanger tubes in a gas water heater. The pitting corrosion behaviors on the inner walls of 444, 445 and 316L stainless steel tubes were investigated in a tap water [...] Read more.
A corrosion device was established to simulate the service environment of stainless steel heat exchanger tubes in a gas water heater. The pitting corrosion behaviors on the inner walls of 444, 445 and 316L stainless steel tubes were investigated in a tap water solution at 60 °C under different heating temperatures from 600 to 800 °C for 500 h by means of optical microscopy (OM), scanning electron microscopy (SEM) and X-ray diffraction (XRD) analyses. The increase in heating temperature significantly promotes the thickening of scale layers and the formation and growth of corrosion pits on the inner surfaces of the three stainless steel tubes. Under different heating temperature conditions, the maximum and average depths of corrosion pits decrease sequentially from 444 to 445 and then to 316L stainless steel. The scales have similar compositions for the three steel tubes, but the scale thickness is thinner on 316L stainless steel than on the other two steels. In addition, the double-loop electrochemical potentiokinetic reactivation (DL-EPR) test indicates that there is almost no sensitization for the outer walls of the three stainless steel tubes after being heated at 800 °C. Full article
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16 pages, 9492 KB  
Article
3D-Printed Composites Filled with Carbon Nanotubes and Barium Titanate for Electromagnetic Applications
by Juta Varnytė, Edita Palaimienė, Jan Macutkevič, Pauline Blyweert, Aušra Selskiene, Jūras Banys, Vanessa Fierro and Alain Celzard
Polymers 2026, 18(8), 944; https://doi.org/10.3390/polym18080944 - 12 Apr 2026
Viewed by 114
Abstract
Electromagnetic (EM) radiation emitted by various sources can cause malfunctions or damage to other electronic devices. Composite materials are widely used for EM field shielding. This work presents and analyzes the dielectric properties of 3D-printed composites containing carbon nanotubes (CNTs) and barium titanate [...] Read more.
Electromagnetic (EM) radiation emitted by various sources can cause malfunctions or damage to other electronic devices. Composite materials are widely used for EM field shielding. This work presents and analyzes the dielectric properties of 3D-printed composites containing carbon nanotubes (CNTs) and barium titanate (BaTiO3) over a broad frequency range. The analyzed 3D structures included a fully filled plate (PL), a basic honeycomb (BH), a honeycomb with re-entrant auxetic features (HREA), and a hierarchical honeycomb (HH). It was found that the composite material containing 1.8 wt.% CNTs and 20 wt.% BaTiO3 exhibits the highest absorption coefficient in the frequency range from 25 GHz to 53 GHz for all investigated 3D structures. A high concentration of BaTiO3 increases dielectric loss and interfacial polarization, while providing a CNT network. The synergy of these mechanisms results in the highest absorption of EM waves in the 25–53 GHz range. Moreover, all samples containing BaTiO3 inclusions exhibited a distinctive electrical conductivity behavior, attributed to the high complex dielectric permittivity of barium titanate, which enhances interfacial polarization. The highest conductivity and dielectric permittivity values were measured in samples containing 1.8 wt.% CNTs and 10 wt.% BaTiO3, while a further increase in BaTiO3 concentration caused a decline in dielectric performance. This effect is due to the dispersion and agglomeration of filler particles in composites with higher BaTiO3 concentrations. Full article
(This article belongs to the Section Polymer Composites and Nanocomposites)
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10 pages, 891 KB  
Article
Monitoring Spontaneous Swallowing After Tracheostomy Using a Neck-Worn Electronic Stethoscope: A Pilot Study
by Shin Matsumoto, Tetsuro Wada, Yukiyo Shimizu, Satoshi Fukuzawa, Yohei Teramoto, Haruna Nakazawa, Yasushi Hada, Kenji Suzuki and Keiji Tabuchi
J. Clin. Med. 2026, 15(8), 2911; https://doi.org/10.3390/jcm15082911 - 11 Apr 2026
Viewed by 145
Abstract
Background/Objectives: Reduced spontaneous swallowing frequency (SSF) may reflect dysphagia. In this study, SSF was evaluated using a neck-worn electronic stethoscope (NWES), certified as a medical device in Japan, with artificial intelligence support in patients undergoing tracheostomy. Methods: This single-center observational study [...] Read more.
Background/Objectives: Reduced spontaneous swallowing frequency (SSF) may reflect dysphagia. In this study, SSF was evaluated using a neck-worn electronic stethoscope (NWES), certified as a medical device in Japan, with artificial intelligence support in patients undergoing tracheostomy. Methods: This single-center observational study included tracheotomy patients who underwent swallowing assessment with an NWES between August 2024 and July 2025. Several variables were evaluated, including tracheostomy cannula cuff status and dietary status, assessed using the Functional Oral Intake Scale (FOIS). The Mann–Whitney U-test was applied, with SSF (/min) measured over 10 min using an NWES as the primary objective variable. Furthermore, Spearman’s correlation analysis was performed to examine the relationship between SSF (/min) and the pharyngeal saliva retention grade, which was determined using the Hyodo score during fiberoptic endoscopic evaluation of swallowing (FEES). Results: Eighteen patients who underwent tracheotomies were included in this study. SSF (/min) increased significantly when the tracheostomy cannula cuff was deflated (p = 0.049) and when the feeding status was FOIS ≥ 3 (p = 0.032) or FOIS ≥ 4 (p = 0.014). Spearman’s correlation analysis revealed a negative correlation between SSF (/min) and the pharyngeal saliva retention grade (ρ = −0.68, p = 0.0019). Conclusions: SSF measured with an NWES tended to increase with improved swallowing function, which is consistent with the outcomes of previous reports. The SSF measurement method used in this study may prove to be a useful clinical tool. Full article
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18 pages, 5945 KB  
Article
Replica-Based Bidirectional Output Current Limiting for High-Reliability CMOS Class AB Stages
by Andreea Voicu, Cristian Stancu, Ovidiu-George Profirescu, Lidia Dobrescu, Dragoș Dobrescu and Gabriel Dima
Electronics 2026, 15(8), 1595; https://doi.org/10.3390/electronics15081595 - 10 Apr 2026
Viewed by 189
Abstract
This paper presents a compact output-stage current-limiting architecture intended for reliable overcurrent protection in CMOS analog and mixed-signal circuits. In modern integrated systems, the output stages of blocks such as operational amplifiers, drivers, buffers, and reference circuits may be exposed to overload conditions, [...] Read more.
This paper presents a compact output-stage current-limiting architecture intended for reliable overcurrent protection in CMOS analog and mixed-signal circuits. In modern integrated systems, the output stages of blocks such as operational amplifiers, drivers, buffers, and reference circuits may be exposed to overload conditions, low-impedance loads, or short circuits that can lead to excessive power dissipation and device degradation. The proposed architecture employs scaled replicas of the output transistors together with local negative feedback to sense the delivered load current and independently limit both sinking and sourcing currents. The circuit is demonstrated by integration into a two-stage folded-cascode operational amplifier with a class-AB output stage and evaluated through circuit-level simulations in 130 nm CMOS technology. The results confirm a well-defined current limit across the supply and temperature corners that are relevant to high-reliability applications, spanning 2 V and 5 V supplies and a temperature range from −55 °C to 175 °C. The proposed current-limiting scheme constrains both pull-down and pull-up currents to approximately 9–12 mA across the investigated operating domain. Monte Carlo analysis further shows bounded dispersion and symmetric single-mode distributions, indicating predictable operation under device mismatch. These results demonstrate that the proposed architecture provides a compact and scalable solution for deterministic current limiting in reliability-critical CMOS systems. Full article
(This article belongs to the Special Issue Analog/Mixed Signal Integrated Circuit Design)
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10 pages, 1011 KB  
Article
Radiotherapy in Patients with Cardiac Implantable Devices: A Single-Centre Retrospective Observational Analysis of Local Guidelines
by Ellen Saghie, Roshni Manoj, Lloyd Tudor, Stuart Sandey, Catriona Buchan and Muzahir Tayebjee
J. Clin. Med. 2026, 15(8), 2869; https://doi.org/10.3390/jcm15082869 - 10 Apr 2026
Viewed by 160
Abstract
Background: The aim of this study is to determine the safety of a locally implemented Standard of Practice (SOP) in patients with cardiac implantable electronic devices (CIEDs). With increasing use of radiotherapy in cancer treatment and the widespread adaptation of CIEDs, the British [...] Read more.
Background: The aim of this study is to determine the safety of a locally implemented Standard of Practice (SOP) in patients with cardiac implantable electronic devices (CIEDs). With increasing use of radiotherapy in cancer treatment and the widespread adaptation of CIEDs, the British Heart Rhythm Society introduced new guidance in 2025. There remains ambiguity between various international, as well as manufacturer, guidelines on the management of these patients. Methods: This was a retrospective single-centre observational study analysing patients with CIEDs receiving radiotherapy after the implementation of our Standard of Practice in 2021. Patients were identified using the Cardiobase system. Patients were divided into non-pacemaker-dependent, pacemaker-dependent and implantable-cardioverter–defibrillator (ICD) groups. Lead sensing and impedance values were gathered pre- and post-treatment and analysed using a paired Student’s T-test. Results: A total of 320 patients were included in this study. There were no statistically significant changes in lead sensing capabilities in any of the groups pre- and post-radiotherapy with a p value of >0.05. There were no statistically significant changes in lead impedance in the ICD and non-pacemaker-dependent groups. Although statistically significant (p = 0.039), there was no clinically significant reduction in atrial lead impedance in the pacemaker-dependent cohort. Conclusions: From the obtained results, we can conclude that our locally implemented SOP is a safe alternative to BHRS guidelines. Full article
(This article belongs to the Section Cardiology)
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7 pages, 176 KB  
Editorial
Polymers-Based Biosensors and Bioelectronics: Designs and Applications
by Vinh Van Tran
Biosensors 2026, 16(4), 211; https://doi.org/10.3390/bios16040211 - 9 Apr 2026
Viewed by 165
Abstract
Biosensors and bioelectronics (B&B) are typical devices working at the interfaces of biology and electronics [...] Full article
34 pages, 5263 KB  
Review
Advances in Polymer Film and Coating Technologies for Enhanced Surface Functionality
by Rashid Dallaev
Polymers 2026, 18(8), 918; https://doi.org/10.3390/polym18080918 - 9 Apr 2026
Viewed by 167
Abstract
Polymer films and coatings play an increasingly critical role in extending material functionality across industrial, biomedical, and environmental applications. Recent advances in surface engineering have enabled precise control of interfacial properties, leading to enhanced durability, cleanliness, and protection. This review summarizes state-of-the-art strategies [...] Read more.
Polymer films and coatings play an increasingly critical role in extending material functionality across industrial, biomedical, and environmental applications. Recent advances in surface engineering have enabled precise control of interfacial properties, leading to enhanced durability, cleanliness, and protection. This review summarizes state-of-the-art strategies for modifying polymer surfaces, with an emphasis on plasma-based surface modification and plasma-induced polymerization as versatile, solvent-free methods for tailoring wettability, chemical functionality, and adhesion. Furthermore, it examines emerging classes of self-cleaning and self-sterilizing coatings that leverage photocatalytic, hydrophobic, or antimicrobial mechanisms to mitigate contamination, biofouling, and pathogen transmission. Additionally, developments in high-performance barrier films designed to protect food products and electronic devices through improved resistance to gases, moisture, and chemical agents are highlighted. By integrating insights from materials chemistry, surface physics, and nanostructured coating design, this review provides a comprehensive overview of current achievements and future directions in functional polymer films and coatings aimed at anti-pollution, antibacterial, and anti-corrosion performance. Full article
(This article belongs to the Special Issue Bio-Based Polymeric Materials for Biomedical Applications)
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19 pages, 4668 KB  
Article
Control of Microstructure, Trap Levels, and Trap Distribution in HfO2 Films Grown by Atomic Layer Deposition
by Seyedeh Mahsa Sharafi, Marco Flores, Himasha Appuhami and Farida A. Selim
Nanomaterials 2026, 16(8), 451; https://doi.org/10.3390/nano16080451 - 9 Apr 2026
Viewed by 270
Abstract
HfO2 films have become a critical component for advanced electronics and a wide range of applications. However, their implementation requires control of their microstructure and defects, which often act as charge carrier traps, leading to leakage current in devices and hindering their [...] Read more.
HfO2 films have become a critical component for advanced electronics and a wide range of applications. However, their implementation requires control of their microstructure and defects, which often act as charge carrier traps, leading to leakage current in devices and hindering their dielectric properties. Here, we deposit HfO2 thin films by atomic layer deposition (ALD) on sapphire, Ga2O3, and InGaO3 substrates at low temperature and investigate the dependence of their crystal structure on substrate type, annealing, and thickness. X-ray diffraction measurements showed that alloying Ga2O3 with a modest amount of Indium transferred HfO2 films from amorphous to polycrystalline, an important finding that may be applicable to the deposition of other material systems. The study also presents an interesting approach to measuring shallow and deep traps formed in the films and shows how to control their levels and distributions in the band gap. The measurements reveal that the difference in band gap between the substrate and film, as well as the presence of impurities, strongly influences trap densities and depths. Electron paramagnetic resonance (EPR) measurements were performed to probe the electronic structure of specific point defects detectable by EPR and to correlate these results with trap measurements. Full article
(This article belongs to the Section Synthesis, Interfaces and Nanostructures)
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10 pages, 1335 KB  
Article
Infrared Stealth Characteristics of WO3-Based Electrochromic Devices Mediated by Zn2+-Al3+ Gel Electrolyte
by Ke Wang, Xiaoting Yang, Tongyu Liu and Wei Zhang
Materials 2026, 19(8), 1506; https://doi.org/10.3390/ma19081506 - 9 Apr 2026
Viewed by 153
Abstract
As one of the core technologies in modern national defense and security fields, infrared stealth technology aims to realize the controllable regulation of the radiation characteristics of targets in the infrared band. This paper focuses on a novel electrochromic device with a structure [...] Read more.
As one of the core technologies in modern national defense and security fields, infrared stealth technology aims to realize the controllable regulation of the radiation characteristics of targets in the infrared band. This paper focuses on a novel electrochromic device with a structure of WO3/nickel mesh/Al3+-Zn2+gel electrolyte/zinc foil. The structural composition and working mechanism are systematically analyzed, and the infrared stealth regulation performance is emphatically studied. The WO3 thin film and device structure were characterized by scanning electron microscopy (SEM). The infrared emissivity modulation and optical response properties of the device were measured using an infrared thermal imager and a UV-Vis-NIR spectrophotometer. The prepared WO3 film exhibits a dense spherical morphology, indicating excellent uniformity and compactness. After 1000 cycles, the areal capacitance of the device remains 83.7% of its initial value, demonstrating good cycling stability. Under the voltage regulation of −0.1 V to 1.1 V, the emissivity ε of the device at the typical mid-wave infrared wavelength of 4.0 μm decreases from 0.89 (−0.1 V) to 0.67 (1.1 V), with an absolute modulation amplitude Δε of 0.22. At the typical long-wave infrared wavelength of 8.7 μm, ε decreases from 0.96 (−0.1 V) to 0.69 (1.1 V), with an absolute modulation amplitude Δε of 0.29. The electrochromic switching times for coloring and bleaching are 10.1 s and 2.44 s, respectively. According to infrared thermal imaging tests, in the temperature range of 30–40 °C, the surface temperature difference ΔT between the colored state and bleached state increases from 4.3 °C to 4.6 °C. The maximum regulation amplitude reaches 4.6 °C at 40 °C. The device achieves efficient regulation of infrared emissivity through the electrochromic effect, providing a new device design strategy for infrared stealth technology. Full article
(This article belongs to the Section Construction and Building Materials)
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13 pages, 4411 KB  
Article
Design and Implementation of High-Capacity DDR3 Micro-Module Based on 3D TSV Advanced Packaging
by Haoyue Ji, Liang Zeng, Hongwen Qian, Wenchao Tian, Jingjing Lin and Yuhe Duan
Micromachines 2026, 17(4), 459; https://doi.org/10.3390/mi17040459 - 9 Apr 2026
Viewed by 195
Abstract
To meet the demands for miniaturization, lightweight design, and high performance in modern electronic systems, advanced 3D TSV technology enables a substantial increase in storage capacity even within physically constrained form factors. This paper proposes a schematic design methodology and system-level integrated modeling [...] Read more.
To meet the demands for miniaturization, lightweight design, and high performance in modern electronic systems, advanced 3D TSV technology enables a substantial increase in storage capacity even within physically constrained form factors. This paper proposes a schematic design methodology and system-level integrated modeling approach for a four-layer stacked micro-module based on wafer-level packaging. By leveraging heterogeneous chip fan-out technology and TSV-based vertical stacking, the fabricated DDR3 micro-module achieves a compact footprint of 14 × 9 × 3.5 mm, a storage capacity of 4 GB, and a 64-bit bus width. Compared to conventional board-level mounting, the module reduces the footprint area by 95%. Following comprehensive multi-level testing, the micro-module fully complies with standard protocol requirements, enabling a paradigm shift in form factors for mobile computing devices while enhancing computational density and energy efficiency in data center server applications. Full article
(This article belongs to the Special Issue Micro/Nano Manufacturing of Electronic Devices)
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