Search Results (553)

Improving charge transport in the aggregated state of nanocomposites is challenging due to the large number of defects present at grain boundaries. To enhance the charge transfer and photogenerated carrier extraction of MnO_x nanofibers, a MnO_x/GO (graphene oxide) nanocomposite was prepared. The effects of GO content and bias on the optoelectronic properties were studied. Representative light sources at 405, 650, 780, 808, 980, and 1064 nm were used to examine the photoelectric signals. The results indicate that the MnO_x/GO nanocomposites have photocurrent switching behaviours from the visible region to the NIR (near-infrared) when the amount of GO added is optimised. It was also found that even with zero bias and storage of the nanocomposite sample at room temperature for over 8 years, a good photoelectric signal could still be extracted. This demonstrates that the MnO_x/GO nanocomposites present a strong built-in electric field that drives the directional motion of photogenerated carriers, avoids the photogenerated carrier recombination, and reflect a good photophysical stability. The strength of the built-in electric field is strongly affected by the component ratios of the resulting nanocomposite. The formation of the built-in electric field results from interfacial charge transfer in the nanocomposite. Modulating the charge behaviour of nanocomposites can significantly improve the physicochemical properties of materials when excited by light with different wavelengths and can be used in multidisciplinary applications. Since the recombination of photogenerated electron–hole pairs is the key bottleneck in multidisciplinary fields, this study provides a simple, low-cost method of tailoring defects at grain boundaries in the aggregated state of nanocomposites. These results can be used as a reference for multidisciplinary fields with low energy consumption. Full article

The unique properties of graphene have allowed for the development of graphene-based field-effect transistors (GFETs) for applications in biosensors and chemical devices. However, the modeling and optimization of GFET performance exhibit great challenges. Herein, we propose a quantum transport simulation model for graphene-based field-effect transistors (GFETs) implemented in the open-source Octave programming language. The proposed simulation model (named SimQ) combines the Landauer–Büttiker formalism with self-consistent Schrödinger–Poisson solutions, enabling reliable simulations of transport phenomena. Our approach agrees well with established models, achieving Landauer–Büttiker transmission and tunneling transmission of 0.28 and 0.92, respectively, which are validated against experimental data. The model can predict key GFET characteristics, including carrier mobilities (500–4000 cm²/V·s), quantum capacitance effects, and high-frequency operation (80–100 GHz). SimQ offers detailed insights into charge distribution and wave function evolution, achieving an enhanced computational efficiency through optimized algorithms. Our work contributes to the modeling of graphene-based field-effect transistors, providing a flexible and accessible simulation platform for designing and optimizing GFETs with potential applications in the next generation of electronic devices. Full article

Accelerated industrialization and surging energy demands have led to continuously rising atmospheric CO₂ concentrations. Developing sustainable methods to reduce atmospheric CO₂ levels is crucial for achieving carbon neutrality. Concurrently, the rapid development of new energy vehicles has driven a significant increase in demand for lithium-ion batteries (LIBs), which are now approaching an end-of-life peak. Efficient recycling of valuable metals from spent LIBs represents a critical challenge. This study employs conventional hydrometallurgical processing to recover valuable metals from spent LIBs. Subsequently, Ni-doped Co₃O₄ (Ni:Co₃O₄) supported on the natural mineral attapulgite (ATP) was synthesized via a sol–gel method. The incorporation of a small amount of Ni into the Co₃O₄ lattice generates oxygen vacancies, inducing a localized surface plasmon resonance (LSPR) effect, which significantly enhances charge carrier transport and separation efficiency. During the photocatalytic reduction of CO₂, the primary product CO generated by the Ni:Co₃O₄/ATP composite achieved a high production rate of 30.1 μmol·g⁻¹·h⁻¹. Furthermore, the composite maintains robust catalytic activity even after five consecutive reaction cycles. Full article

Grain boundaries are among the most influential structural features that control the charge transport in polycrystalline organic semiconductors. Acting as both charge trapping sites and electrostatic barriers, they disrupt molecular packing and introduce energetic disorder, thereby limiting carrier mobility, increasing threshold voltage, and degrading the stability of organic thin-film transistors (OTFTs). This review presents a detailed discussion of grain boundary formation, their impact on charge transport, and experimental strategies for engineering their structure and distribution across several high-mobility small-molecule semiconductors, including pentacene, TIPS pentacene, diF-TES-ADT, and rubrene. We explore grain boundary engineering approaches through solvent design, polymer additives, and external alignment methods that modulate crystallization dynamics and domain morphology. Then various case studies are discussed to demonstrate that optimized processing can yield larger, well-aligned grains with reduced boundary effects, leading to great mobility enhancements and improved device stability. By offering insights from structural characterization, device physics, and materials processing, this review outlines key directions for grain boundary control, which is essential for advancing the performance and stability of organic electronic devices. Full article

The performance of optoelectronic devices is affected by various noise sources. A notable factor is the 4.2% lattice mismatch at the Ge/Si interface, which significantly influences the efficiency of Ge-on-Si photodetectors. These noise sources can be analyzed by examining the impact of the Ge/Si interface and deep traps on dark and photocurrents. This study evaluates the impact of these charge traps on key photodetector performance metrics, including responsivity, photo-to-dark current ratio, noise equivalent power (NEP), and specific detectivity (D^*). The trapping effects on charge transport under both forward and reverse bias conditions are monitored through hysteresis analysis. When illuminated with an unmodulated 1550 nm laser, all the key performance metrics exhibit maximum variations at a specific reverse bias. This critical bias marks the transition from saturated to exponential charge transport regimes, where intensified electric fields enhance trap-assisted recombination and thus maximize metric fluctuations. Full article

Lead sulfide colloidal quantum dots (PbS QDs) have demonstrated great potential in short-wave infrared (SWIR) photodetectors due to their tunable bandgap, low cost, and broad spectral response. While significant progress has been made in surface ligand modification and defect state passivation, studies focusing on the interface between QDs and electrodes remain limited, which hinders further improvement in device performance. In this work, we propose an interface engineering strategy based on 3-aminopropyltriethoxysilane (APTES) to enhance the interfacial contact between PbS QD films and ITO interdigitated electrodes, thereby significantly boosting the overall performance of SWIR photodetectors. Experimental results demonstrate that the optimal 0.5 h APTES treatment duration significantly enhances responsivity by achieving balanced interface passivation and charge carrier transport. Moreover, The APTES-modified device exhibits a controllable dark current and faster photo-response under 1310 nm illumination. This interface engineering approach provides an effective pathway for the development of high-performance PbS QD-based SWIR photodetectors, with promising applications in infrared imaging, spectroscopy, and optical communication. Full article

Perovskite solar cells (PSCs) leverage the exceptional photoelectric properties of perovskite materials, yet interfacial energy level mismatches limit carrier extraction efficiency. In this work, energy level alignment was exploited to reduce the charge transport barrier, which can be conducive to the transmission of photo-generated carriers and reduce the probability of electron–hole recombination. We designed a dual-transition perovskite solar cell (PSC) with the structure of FTO/TiO₂/Nb₂O₅/CH₃NH₃PbI₃/MoO₃/Spiro-OMeTAD/Au by finite element analysis methods. Compared with the pristine device (FTO/TiO₂/CH₃NH₃PbI₃/Spiro-OMeTAD/Au), the open-circuit voltage of the optimized cell increases from 0.98 V to 1.06 V. Furthermore, the design of a circular platform light-trapping structure makes up for the light loss caused by the transition at the interface. The short-circuit current density of the optimized device increases from 19.81 mA/cm² to 20.36 mA/cm², and the champion device’s power conversion efficiency (PCE) reaches 17.83%, which is an 18.47% improvement over the planar device. This model provides new insight for the optimization of perovskite devices. Full article

Flexible perovskite solar cells (FPSCs) hold great promise for lightweight and wearable photovoltaics, but improving their efficiency and durability under mechanical stress remains a key challenge. In this work, we fabricate and characterize flexible planar FPSCs on a polyethylene terephthalate (PET). A phenethylammonium iodide (PEAI) surface passivation layer is introduced on the perovskite to form a two-dimensional capping layer, and its impact on device performance and stability is systematically studied. The champion PEAI-passivated flexible device achieves a power conversion efficiency (PCE) of ~16–17%, compared to ~14% for the control device without PEAI. The improvement is primarily due to an increased open-circuit voltage and fill factor, reflecting effective surface defect passivation and improved charge carrier dynamics. Importantly, mechanical bending tests demonstrate robust flexibility: the PEAI-passivated cells retain ~85–90% of their initial efficiency after 700 bending cycles (radius ~5 mm), significantly higher than the ~70% retention of unpassivated cells. This work showcases that integrating a PEAI surface treatment with optimized electron (SnO₂) and hole (spiro-OMeTAD) transport layers (ETL and HTL) can simultaneously enhance the efficiency and mechanical durability of FPSCs. These findings pave the way for more reliable and high-performance flexible solar cells for wearable and portable energy applications. Full article

This work explored an electrochemical approach for synthesizing lanthanum-modified nickel oxide (NiO_x:La) as a hole transport layer (HTL) in inverted perovskite solar cells (IPSCs). By varying the La³⁺ concentration, the chemical, charge transport, structural, and morphological properties of the NiO_x:La film and the HTL/PVK interface were evaluated to enhance photovoltaic performance. X-ray photoelectron spectroscopy (XPS) confirmed La³⁺ incorporation, a higher Ni³⁺/Ni³⁺ ratio, and a valence band shift, improving p-type conductivity. Electrochemical impedance spectroscopy and Mott–Schottky analyses indicated that NiO_x:La 0.5% exhibited the lowest resistance and the highest carrier density, correlating with higher recombination resistance. The NiO_x:La 0.5% based cell achieved a PCE of 20.08%. XRD and SEM confirmed no significant changes in PVK structure, while photoluminescence extinction demonstrated improved charge extraction. After 50 days, this cell retained 80% of its initial PCE, whereas a pristine NiO_x device retained 75%. Hyperspectral imaging revealed lower optical absorption loss and better homogeneity. These results highlight NiO_x:La as a promising HTL for efficient and stable IPSCs. Full article

Developing high-performance photocatalysts for solar hydrogen production requires the synergistic modulation of chemical composition, nanostructure, and charge carrier transport pathways. Herein, we report a Cs and P co-doped tubular graphitic carbon nitride (Cs/PTCN-x) photocatalyst synthesized via a strategy that integrates elemental doping with morphological engineering. Structural characterizations reveal that phosphorus atoms substitute lattice carbon to form P-N bonds, while Cs⁺ ions intercalate between g-C₃N₄ layers, collectively modulating surface electronic states and enhancing charge transport. Under visible-light irradiation (λ ≥ 400 nm), the optimized Cs/PTCN-3 catalyst achieves an impressive hydrogen evolution rate of 8.085 mmol·g⁻¹·h⁻¹—over 33 times higher than that of pristine g-C₃N₄. This remarkable performance is attributed to the multidimensional synergy between band structure tailoring and hierarchical porous tubular architecture, which together enhance light absorption, charge separation, and surface reaction kinetics. This work offers a versatile approach for the rational design of g-C₃N₄-based photocatalysts toward efficient solar-to-hydrogen energy conversion. Full article

Fibrous structure is a promising building block for developing high-performance wearable piezoresistive sensors. However, the inherent non-conductivity of the fibrous polymer remains a bottleneck for highly sensitive and fast-responsive piezoresistive sensors. Herein, we reported a polyaniline/reduced graphene oxide @ polydopamine/poly (vinylidene fluoride) (PANI/rGO@PDA/PVDF) nanofiber piezoresistive sensor (PNPS) capable of versatile wearable biomonitoring. The PNPS was fabricated by integrating rGO sheets and PANI particles into a PDA-modified PVDF nanofiber network, where PDA was implemented to boost the interaction between the nanofiber networks and functional materials, PANI particles were deposited on a nanofiber substrate to construct electroactive nanofibers, and rGO sheets were utilized to interconnect nanofibers to strengthen in-plane charge carrier transport. Benefitting from the synergistic effect of multi-dimensional electroactive materials in piezoresistive membranes, the as-fabricated PNPS exhibits a high sensitivity of 13.43 kPa⁻¹ and a fast response time of 9 ms, which are significantly superior to those without an rGO sheet. Additionally, a wide pressure detection range from 0 to 30 kPa and great mechanical reliability over 12,000 cycles were attained. Furthermore, the as-prepared PNPS demonstrated the capability to detect radial arterial pulses, subtle limb motions, and diverse respiratory patterns, highlighting its potential for wearable biomonitoring and healthcare assessment. Full article

Highly efficient photocatalysts for solar energy conversion require effective charge carrier separation and rapid interfacial transport kinetics to maximize electron availability. Two-dimensional Ti₃CNT_x, a novel conductive material in the MXene family with exceptional electrical conductivity, has emerged as an ideal electron transfer mediator due to its large specific surface area and abundant active terminal groups. In this work, we strategically integrated the 2D multi-metal sulfide Cu-Zn-In-S (CZIS) with 2D Ti₃CNT_x nanosheets through physical mixture, constructing a heterostructured 2D/2D CZIS/Ti₃CNT_x composite photocatalyst for the hydrogen evolution reaction. The unique architecture significantly accelerates electron migration from CZIS to Ti₃CNT_x, while synergistically promoting the spatial separation and directional transfer of photogenerated electron–hole pairs (e⁻/h⁺). When the hydrogen evolution reaction is carried out under identical conditions, the hydrogen yield rate is 4.3 mmol g⁻¹ h⁻¹ with pristine CZIS but is improved dramatically to 14.3 mmol g⁻¹ h⁻¹ when the composite containing an adequate amount of 2D Ti₃CNT_x is used. This study offers new insight into the rational design and controllable synthesis of Ti₃CNT_x-based composite photocatalytic systems for efficient photocatalytic hydrogen production. Full article

Diluted magnetic semiconductors (DMSs) represent a significant area of interest for research and applications in spintronics. Recently, DMSs derived from BaZn₂As₂ have garnered significant interest due to the record Curie temperature (T_C) of 260 K. However, the influence of doping on their magnetic evolution and transport characteristics has not been thoroughly investigated. This study aims to fill this gap through susceptibility and magnetization measurements, electric transport analysis, and muon spin relaxation and rotation (µSR) measurements on (Ba_1−xRb_x)(Zn_1−yMn_y)₂As₂ (0.1 ≤ x, y ≤ 0.25, BRZMA). Key findings include the following: (1) BRZMA showed a maximum T_C of 138 K, much lower than (Ba,K)(Zn,Mn)₂As, because of a reduced carrier concentration. (2) A substantial electromagnetic coupling is evidenced by a negative magnetoresistance of up to 34% observed in optimally doped BRZMA. (3) A 100% static magnetic ordered volume fraction is achieved in the low-temperature region, indicating a homogeneous magnet. (4) Furthermore, a systematic and innovative methodology has been initially proposed, characterized by clear step-by-step instructions aimed at enhancing T_C, grounded in robust experimental findings. The findings presented provide valuable insights into the spin–charge interplay concerning magnetic and electronic transport properties. Furthermore, they offer clear direction for the investigation of higher T_C DMSs. Full article

Nanomaterials with large specific surface area (SSA) have emerged as pivotal platforms for energy storage and environmental remediation, primarily due to their enhanced active site exposure, improved mass transport capabilities, and superior interfacial reactivity. Among them, polymeric carbon nitride (g-C₃N₄) has garnered significant attention in energy and environmental applications owing to its visible-light-responsive bandgap (~2.7 eV), exceptional thermal/chemical stability, and earth-abundant composition. However, the practical performance of g-C₃N₄ is fundamentally constrained by intrinsic limitations, including its inherently low SSA (<20 m²/g via conventional thermal polymerization), rapid recombination of photogenerated carriers, and inefficient charge transfer kinetics. Notably, the theoretical SSA of g-C₃N₄ reaches 2500 m²/g, yet achieving this value remains challenging due to strong interlayer van der Waals interactions and structural collapse during synthesis. Recent advances demonstrate that state-of-the-art strategies can elevate its SSA to 50–200 m²/g. To break this surface area barrier, advanced strategies achieve SSA enhancement through three primary pathways: pre-treatment (molecular and supramolecular precursor design), in process (templating and controlled polycondensation), and post-processing (chemical exfoliation and defect engineering). This review systematically examines controllable synthesis methodologies for high-SSA g-C₃N₄, analyzing how SSA amplification intrinsically modulates band structures, extends carrier lifetimes, and boosts catalytic efficiencies. Future research should prioritize synergistic multi-stage engineering to approach the theoretical SSA limit (2500 m²/g) while preserving robust optoelectronic properties. Full article

Tin(II) sulfide(SnS)/titanium(IV) oxide (TiO₂) heterostructure thin films were prepared by radio-frequency magnetron sputtering to investigate the enhancement effect of the formed heterojunction on the photocatalytic performance. By adjusting the sputtering time to vary the thickness of the SnS layer, the crystallinity and light-absorption properties of the light-absorbing layer and the quality of the heterojunction interface were effectively controlled, thereby optimizing the fabrication process of the heterojunction. It was found that when the SnS layer thickness was 244 nm and the TiO₂ layer thickness was 225 nm, the heterostructure film exhibited optimal photoelectrochemical performance, generating the highest photocurrent of 3.03 µA/cm² under visible light, which was 13.8 times that of a pure TiO₂ film and 2.4 times that of a pure SnS film of the same thickness. Additionally, it demonstrated the highest degradation efficiency for methylene blue dye. The improved photoelectrochemical performance of the SnS/TiO₂ heterostructure film can be primarily attributed to the following: (1) the incorporation of narrow-bandgap SnS effectively broadens the light-absorption range, improving visible-light harvesting; (2) the staggered band alignment between SnS and TiO₂ forms a type-II heterojunction, significantly enhancing the charge carrier separation and transport efficiency. The present work demonstrated the feasibility of magnetron sputtering for constructing high-quality SnS/TiO₂ heterostructures, providing insights into the design and fabrication of photocatalytic heterojunctions. Full article