Search Results (31)

Synthesis and characterization of undoped and samarium-doped CuO–SnO₂:F thin films using the spray pyrolysis technique are presented. The effect of the samarium doping level on the physical properties of these films was thoroughly analyzed. X-ray diffraction patterns proved the successful synthesis of pure CuO–SnO₂:F thin films, free from detectable impurities. The smallest crystallite size was observed in 6% Sm-doped CuO–SnO₂:F thin films. The 6% Sm-doped CuO–SnO₂films demonstrated an increasedsurface area of 40.6 m²/g, highlighting improved textural properties, which was further validated by XPS analysis.The bandgap energy was found to increase from 1.90 eV for undoped CuO–SnO₂:F to 2.52 eV for 4% Sm-doped CuO–SnO₂:F, before decreasing to 2.03 eV for 6% Sm-doped CuO–SnO2:F thin films. Photoluminescence spectra revealed various emission peaks, suggesting a quenching effect. A numerical simulation of a new solar cell based on FTO/ZnO/Sm–CuO–SnO₂:F/X/Mo was carried out using Silvaco Atlas software, where X represented the absorber layer CIGS, CdTe, and CZTS. The results showed that the solar cell with CIGS as the absorber layer achieved the highest efficiency of 15.98. Additionally, the thin films demonstrated strong photocatalytic performance, with 6% Sm-doped CuO–SnO₂:F showing 86% degradation of ampicillin after two hours. This comprehensive investigation provided valuable insights into the synthesis, properties, and potential applications of Sm-doped CuO–SnO₂ thin films, particularly for solar energy and pharmaceutical applications. Full article

Thin-film solar cells (TFSCs) represent a promising frontier in renewable energy technologies due to their potential for cost reduction, material efficiency, and adaptability. This literature review examines the key materials and advancements that make up TFSC technologies, with a focus on Cu(In,Ga)Se₂ (CIGS), cadmium telluride (CdTe), and Cu₂ZnSnS₄ (CZTS) and its sulfo-selenide counterpart Cu₂ZnSn(S,Se)₄ (CZTSSe). Each material’s unique properties—including tuneable bandgaps, high absorption coefficients, and low-cost scalability—make them viable candidates for a wide range of applications, from building-integrated photovoltaics (BIPV) to portable energy solutions. This review explores recent progress in the enhancement of power conversion efficiency (PCE), particularly through bandgap engineering, alkali metal doping, and interface optimization. Key innovations such as silver (Ag) alloying in CIGS, selenium (Se) alloying in CdTe, and sulfur (S) to Se ratio optimization in CZTSSe have driven PCE improvements and expanded the range of practical uses. Additionally, the adaptability of TFSCs for roll-to-roll manufacturing on flexible substrates has further cemented their role in advancing renewable energy adoption. Challenges remain, including environmental concerns, but ongoing research addresses these limitations, paving the way for TFSCs to become a crucial technology for transitioning to sustainable energy systems. Full article

The research referred to in this study examines the morphological, structural, and optical characteristics of kesterite (Cu_1−xAg_x)₂ZnSnS₄ (CAZTS) thin films, which are produced using a process known as thermal evaporation (TE). The study’s main goal was to determine how different Ag contents affect the characteristics of CAZTS systems. X-ray diffraction (XRD) and Raman spectroscopy were used to confirm the crystal structure of the CAZTS thin films. Using a mathematical model of spectroscopic ellipsometry, the refractive index (n) represented the real part of the complex thin films, the extinction coefficient (k) portrayed the imaginary part, and the energy bandgap of the fabricated thin films was calculated. The energy bandgap is a crucial parameter for solar cell applications, as it determines the wavelength of light that the material can absorb. The energy bandgap was found to decrease from 1.74 eV to 1.55 eV with the increasing Ag content. The ITO/n-CdS/p-CAZTS/Mo heterojunction was well constructed, and the primary photovoltaic characteristics of the n-CdS/p-CAZTS junctions were examined for use in solar cells. Different Ag contents of the CAZTS layers were used to determine the dark and illumination (current–voltage) characteristics of the heterojunctions. The study’s findings collectively point to CAZTS thin layers as potential absorber materials for solar cell applications. Full article

In the dynamic field of photovoltaic technology, the pursuit of efficiency and sustainability has led to continuous novelty, shaping the landscape of solar energy solutions. One of the key elements affecting the efficiency of photovoltaic cells of II^nd and III^rd generation is the presence of transparent conductive oxide (TCO) layers, which are key elements impacting the efficiency and durability of solar panels, especially for DSSC, CdTe, CIGS (copper indium gallium diselenide) or organic, perovskite and quantum dots. TCO with low electrical resistance, high mobility, and high transmittance in the VIS–NIR region is particularly important in DSSC, CIGS, and CdTe solar cells, working as a window and electron transporting layer. This layer must form an ohmic contact with the adjacent layers, typically the buffer layer (such as CdS or ZnS), to ensure efficient charge collection Furthermore it ensures protection against oxidation and moisture, which is especially important when transporting the active cell structure to further process steps such as lamination, which ensures the final seal. Transparent conductive oxide layers, which typically consist of materials such as indium tin oxide (ITO) or alternatives such as fluorine-doped tin oxide (FTO), serve dual purposes in photovoltaic applications. Primarily located as the topmost layer of solar cells, TCOs play a key role in transmitting sunlight while facilitating the efficient collection and transport of generated electrical charges. This complex balance between transparency and conductivity highlights the strategic importance of TCO layers in maximizing the performance and durability of photovoltaic systems. As the global demand for clean energy increases and the photovoltaic industry rapidly develops, understanding the differential contribution of TCO layers becomes particularly important in the context of using PV modules as building-integrated elements (BIPV). The use of transparent or semi-transparent modules allows the use of building glazing, including windows and skylights. In addition, considering the dominant position of the Asian market in the production of cells and modules based on silicon, the European market is intensifying work aimed at finding a competitive PV technology. In this context, thin-film, organic modules may prove competitive. For this purpose, in this work, we focused on the electrical parameters of two different thicknesses of a transparent FTO layer. First, the influence of the FTO layer thickness on the transmittance over a wide range was verified. Next, the chemical composition was determined, and key electrical parameters, including carrier mobility, resistivity, and the Hall coefficient, were determined. Full article

The development of semitransparent CdS/CdTe ultrathin solar cells has been delayed as a result of the activation annealing to which the device must be subjected, which may involve problems such as the sublimation of ultrathin films and the diffusion of Cd and S at the interface. In this work, CdS/CdTe ultrathin devices on soda-lime glass/SnO₂:F/ZnO substrates were obtained by RF magnetron sputtering. CdS/CdTe ultrathin heterostructures were obtained with the following thicknesses for the CdS thin film: 70, 110, and 135 nm. The CdTe thickness film was kept constant at 620 nm. Subsequently, activation annealing with CdCl₂ was carried out at 400 °C. Surface characterization was performed by scanning electron microscopy, which indicated that the CdCl₂ annealing tripled the CdTe thin films’ grain size. Raman characterization showed that CdS thin films deposited by RF sputtering present the first, the second, and the third longitudinal optical modes, indicating the good crystallinity of the CdS thin films. The study showed that the photovoltaic properties of the CdS/CdTe ultrathin devices improved as the CdS thicknesses decreased. Full article

Cadmium telluride (CdTe) photovoltaics is a promising and scalable technology, commanding over 90% of the thin film photovoltaics market. An appropriate window layer is crucial for high-efficiency CdTe solar cells. This study aimed to investigate a representative MgZnO (MZO) window layer and enhance device performance. We studied the properties of MZO films with different substrate temperatures and their application in CdSeTe/CdTe solar cells. Despite the high transmittance and wide band gap of MZO film, the device performance of MZO sputtered at room temperature is limited by excessive conduction band offset. Tailoring the substrate temperature for MZO sputtering helps optimize the band alignment of the MZO/CdSeTe interface, contributing to an improvement in the efficiency of CdTe solar cells. Full article

A comparative study of figure-of-merit fiber sensors of the mass concentration of NaCl solutions based on single-mode and multi-mode fibers was carried out. Lossy mode resonance is realized on chemically thinned sections of optical fibers to various diameters (from 26 to 100 μm) coated with ZnTe. Thin-film coatings were applied using the method of metalorganic chemical vapor deposition (MOCVD). Samples of single-mode and multi-mode fiber sensors were created in such a way that the depth and spectral position of resonances in aqueous NaCl solutions coincided. Sensors implemented on a single-mode fiber have a higher sensitivity (5930 nm/refractive index unit (RIU)) compared to those on a multi-mode fiber (4860 nm/RIU) and a smaller half-width of the resonance in the transmission spectrum. According to the results of experiments, figure-of-merit sensors are in the range of refractive indices of 1.33–1.35 for: multi-mode fiber—25 RIU⁻¹, single-mode fiber—75 RIU⁻¹. The sensitivity of the resulting sensors depends on the surface roughness of the ZnTe coating. The roughness of films synthesized on a single-mode fiber is four times higher than this parameter for a coating on a multi-mode fiber. For the first time, in the transmission spectrum during the synthesis of a thin-film coating on a multi-mode fiber, the possibility of separating the first nine orders of resonances into electric and magnetic transverse components has been demonstrated. The characteristics of sensors with the operating wavelength range in the visible (500–750 nm) and infrared (1350–1550 nm) regions of the spectrum are compared. The characteristics of multi-mode lossy mode resonance sensors are demonstrated, which make them more promising for use in applied devices than for laboratory research. Full article

The microstructural, electrical, and optical properties of Cu-doped and undoped ZnTe thin films grown on glass substrates are covered in this article. To determine the chemical makeup of these materials, both energy-dispersive X-ray (EDAX) spectroscopy and X-ray photoelectron spectroscopy were employed. The cubic zinc-blende crystal structure of ZnTe and Cu-doped ZnTe films was discovered using X-ray diffraction crystallography. According to these microstructural studies, the average crystallite size increased as the amount of Cu doping increased, whereas the microstrain decreased as the crystallinity increased; hence, defects were minimized. The Swanepoel method was used to compute the refractive index, and it was found that the refractive index rises as the Cu doping levels rises. The optical band gap energy was observed to decrease from 2.225 eV to 1.941 eV as the Cu content rose from 0% to 8%, and then slightly increase to 1.965 eV at a Cu concentration of 10%. The Burstein–Moss effect may be connected to this observation. The larger grain size, which lessens the dispersion of the grain boundary, was thought to be the cause of the observed increase in the dc electrical conductivity with an increase in Cu doping. In structured undoped and Cu-doped ZnTe films, there were two carrier transport conduction mechanisms that could be seen. According to the Hall Effect measurements, all the grown films exhibited a p-type conduction behavior. In addition, the findings demonstrated that as the Cu doping level rises, the carrier concentration and the Hall mobility similarly rise, reaching an ideal Cu concentration of 8 at.%, which is due to the fact that the grain size decreases grain boundary scattering. Furthermore, we examined the impact of the ZnTe and ZnTe:Cu (at Cu 8 at.%) layers on the efficiency of the CdS/CdTe solar cells. Full article

Cadmium (Cd)-free photodiodes based on n-type Zinc Selenide/p-type Zinc Telluride (n-ZnSe/p-ZnTe) heterojunctions were prepared by Radio Frequency-Magnetron Sputtering (RF-MS) technique, and their detailed optical and electrical characterization was performed. Onto an optical glass substrate, 100 nm gold (Au) thin film was deposited by Thermal Vacuum Evaporation (TVE) representing the back-contact, followed by the successive RF-MS deposition of ZnTe, ZnSe, Zinc Oxide (ZnO) and Indium Tin Oxide (ITO) thin films, finally resulting in the Au/ZnTe/ZnSe/ZnO/ITO sub-micrometric “substrate”-type configuration. Next, the optical characterization by Ultraviolet-Visible (UV-VIS) spectroscopy was performed on the component thin films, and their optical band gap values were determined. The electrical measurements in the dark and under illumination at different light intensities were subsequently performed. The Current–Voltage (I–V) characteristics in the dark are nonlinear with a relatively high asymmetry, following the modified Shockley–Read equation. From their analysis, the series resistance, shunt resistance, the ideality factor and saturation current were determined with high accuracy. It is worth noting that the action spectrum of the structure is shifted to short wavelengths. A sensibility test for the 420–500 nm range was performed while changing the intensity of the incident light from 100 mW/cm${}^2$ down to 10 mW/cm${}^2$ and measuring the photocurrent. The obtained results provided sufficient information to consider the present sub-micrometric photodiodes based on n-ZnSe/p-ZnTe heterojunctions to be more suitable for the UV domain, demonstrating their potential for integration within UV photodetectors relying on environmentally-friendly materials. Full article

Cu₂ZnSnS₄ (CZTS) is an intensively studied potential solar cell absorber and a promising thermoelectric (TE) material. In the form of colloidal nanocrystals (NCs), it is very convenient to form thin films on various substrates. Here, we investigate composites of CZTS NCs with PEDOT:PSS, a widely used photovoltaics polymer. We focus on the investigation of the structural stability of both NCs and polymers in composite thin films with different NC-to-polymer ratios. We studied both pristine films and those subjected to flash lamp annealing (FLA) or laser irradiation with various power densities. Raman spectroscopy was used as the main characterization technique because the vibrational modes of CZTS NCs and the polymer can be acquired in one spectrum and thus allow the properties of both parts of the composite to be monitored simultaneously. We found that CZTS NCs and PEDOT:PSS mutually influence each other in the composite. The thermoelectric properties of PEDOT:PSS/CZTS composite films were found to be higher compared to the films consisting of bare materials, and they can be further improved by adding DMSO. However, the presence of NCs in the polymer deteriorates its structural stability when subjected to FLA or laser treatment. Full article

Films of zinc telluride (ZnTe) were deposited on the surface of a chemically thinned section of an optical fiber by metalorganic chemical vapor deposition. The boundary values of temperatures and the concentration ratios of the initial tellurium and zinc precursors at which the synthesis of ZnTe coatings is possible are determined. The influence of the position of the thinned part of the optical fiber in the reactor on the growth rate of films on the side surface of the fiber was studied, on the basis of which, the parameters of the deposition zone were determined. By placing a section of an optical fiber with an etched cladding in the center of this zone, sensitive elements for refractometers were created. The principle of their operation is based on the dependence of the spectral position of the lossy mode resonance (LMR) maximum on the refractive index (RI) of the external medium. It has been found that even thin films deposited on a light guide in a continuous process have cracks. It is shown that the interruption of the deposition process makes it possible to avoid the appearance of defects in the zinc telluride layers even with the repeated deposition of the sensor. The sensitivity of the spectral position of the LMR to changes in the RI of aqueous sodium chloride solutions in the range from 1.33 to 1.35 for the first transverse electric and transverse magnetic LMRs was 6656 and 6240 nm per refractive index unit, respectively. Full article

The power conversion efficiency (PCE) of solution-processed CdTe nanocrystals (NCs) solar cells has been significantly promoted in recent years due to the optimization of device design by advanced interface engineering techniques. However, further development of CdTe NC solar cells is still limited by the low open-circuit voltage (V_oc) (mostly in range of 0.5–0.7 V), which is mainly attributed to the charge recombination at the CdTe/electrode interface. Herein, we demonstrate a high-efficiency CdTe NCs solar cell by using organic polymer poly[bis(4–phenyl)(2,4,6–trimethylphenyl)amine] (PTAA) as the hole transport layer (HTL) to decrease the interface recombination and enhance the V_oc. The solar cell with the architecture of ITO/ZnO/CdS/CdSe/CdTe/PTAA/Au was fabricated via a layer-by-layer solution process. Experimental results show that PTAA offers better back contact for reducing interface resistance than the device without HTL. It is found that a dipole layer is produced between the CdTe NC thin film and the back contact electrode; thus the built–in electric field (V_bi) is reinforced, allowing more efficient carrier separation. By introducing the PTAA HTL in the device, the open–circuit voltage, short-circuit current density and the fill factor are simultaneously improved, leading to a high PCE of 6.95%, which is increased by 30% compared to that of the control device without HTL (5.3%). This work suggests that the widely used PTAA is preferred as the excellent HTL for achieving highly efficient CdTe NC solar cells. Full article

AlN thin film is widely used in piezoelectric MEMS devices, and the accurate characterizations of its material coefficients are critical for the optimization of the AlN thin film process and the design of AlN thin-film-based devices. However, it is difficult to extract the material coefficients of AlN in the form of thin film. This paper reports a strategy for systematically extracting full elastic coefficients, piezoelectric coefficients and dielectric constants of c-axis-oriented AlN thin film based on the resonance method outlined in IEEE Standard on Piezoelectricity Std 176-1987. In this strategy, four self-suspended resonators with length thickness extension (LTE), thickness extension (TE), radial extension (RE), lateral electric field excited thickness shear (LEF-TS) modes together with a lamb wave resonator (LWR) are specifically adopted, and the material coefficients of AlN thin film are extracted by measuring the impedance spectra of these resonators. In addition, the effects of the pad and electrodes on the resonators were systematically studied, and the corresponding procedures to eliminate their influences on the extraction accuracy of material coefficients were proposed. Finally, a complete extraction process based on the above strategy was established. The simulation results show that the strategy can achieve high accuracy for AlN thin film with different thicknesses and electrode configurations, and it can also be applied to other materials belonging to the 6 mm piezoelectric crystal class such as ZnO, ScAlN, etc. Full article

CdZnTe (CZT) films were grown by closed space sublimation (CSS) method on (111)-oriented CZT wafers, non-oriented CZT wafers and FTO substrates. The compositional and morphological properties of CZT films on different substrates were characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which indicated that CZT films grown on (111)-oriented CZT wafers had low dislocation density and high Zn composition. X-ray diffraction (XRD) measurements confirmed that CZT films grown on (111)-oriented CZT wafers had the best crystal quality. The I-V and DC photoconductivity measurements indicated that CZT films on (111)-oriented CZT wafer had good carrier transport performance. The energy spectra of CZT films grown on (111)-oriented CZT wafer presented that it had a good response to the nuclear radiation under ²⁴¹Am. Full article

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In₂S₃) and carrier concentrations for the absorber layer (N_A) and buffer layer (N_D) were varied to determine the optimal simulation parameters. Carrier concentrations (N_A from 2 × 10¹² cm⁻³ to 2 × 10¹⁷ cm⁻³ and N_D from 1 × 10¹⁶ cm⁻³ to 1 × 10²² cm⁻³) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab. Full article