Search Results (45)

Perovskite tandem solar cells (TSCs) have emerged as a transformative photovoltaic technology, offering a viable pathway to surpass the Shockley-Queisser limit of single-junction devices by enabling broader solar spectrum utilization and reduced thermalization losses. This review provides a comprehensive overview of recent progress in perovskite-based TSCs, covering four major device architectures: perovskite/silicon, perovskite/CIGS, all-perovskite, and perovskite/organic TSCs. We systematically discuss the fundamental working principles, including bandgap engineering, charge generation and separation, and current-voltage matching, followed by an in-depth analysis of strategies for perovskite layer regulation, interface engineering, and transport-layer optimization. Key advancements, such as compositional engineering, defect passivation, crystallization control, and optical management, have synergistically pushed power conversion efficiencies (PCEs) beyond 34% for perovskite/silicon TSCs and over 28% for all-perovskite and perovskite/organic configurations. Despite these achievements, critical challenges remain, including material instability, halide phase segregation, lead toxicity, scalable fabrication, and cost-effective integration. This review also outlines future perspectives, emphasizing the development of lead-free perovskites, novel charge-transport materials, advanced encapsulation techniques, and large-area manufacturing processes. With continued interdisciplinary efforts, perovskite TSCs hold great promise for driving the global transition toward sustainable and low-carbon energy systems. Full article

Perovskite solar cells (PSCs) have reached certified efficiencies exceeding 26%, yet the gap to the Shockley–Queisser limit and insufficient operational stability remain key obstacles to commercialization. Quantum dots (QDs) offer a versatile platform to address both challenges through their size-tunable bandgaps, high photoluminescence yields, and solution processability. This review systematically examines four QD integration strategies in PSCs: transport layer modification, active layer doping, UV conversion layers, and tandem sub-cells. The underlying mechanisms—including defect passivation, energy-level engineering, crystallization control, and ion migration suppression—are critically compared across these approaches. Despite significant advances, challenges persist, including the ligand–charge transport trade-off, the environmental toxicity of Pb/Cd-containing QDs, poor reproducibility, and the absence of standardized stability testing protocols. By providing a mechanism-oriented assessment across all device components, this review offers a clear framework for selecting appropriate QD strategies and identifies priority research directions. The perspective of QD strategies in this review provides a useful and significant reference for approaching the theoretical PCE limits of single-junction PSCs by reducing non-radiative recombination and improving light utilization, while QD-based tandem architectures offer a viable route toward surpassing the single-junction Shockley–Queisser limit. Full article

Developing lead-free organic-inorganic hybrid metal halides with strong light-harvesting capabilities and superior stability, while precisely tuning their crystalline phases and electronic structures, remains a key challenge in optoelectronics. Herein, we report a neutral iodine-induced structural transition from a 1D chain-like (C₆H₁₁NH₃)₂SbI₅ architecture to a 0D dimeric (C₆H₁₁NH₃)₃[Sb₂I₉]·I₂ supramolecular host-guest complex. This transformation is achieved via a controlled solution-cooling crystallization process, yielding high-quality bulk single crystals. Crystallographic analysis reveals that N–H···I hydrogen-bonding networks stabilize the organic cations, while halogen bonding interactions anchor the I₂ guests within the lattice cavities of the [Sb₂I₉]³⁻ dimeric host. Experimental characterizations, including XRD, TGA, and XPS, confirm the high phase purity and thermal stability of the (C₆H₁₁NH₃)₃[Sb₂I₉]·I₂ hybrid and determine its electronic band structure. To further elucidate the underlying mechanisms, theoretical calculations were performed, revealing that strong sp-orbital hybridization yields a high absorption coefficient. The associated dimensional transition narrows the direct optical bandgap to 1.46 eV, approaching the Shockley-Queisser limit and demonstrating strong potential for visible-light harvesting. This work elucidates the role of supramolecular host-guest interactions in modulating the lattice evolution of lead-free antimony-based materials, presenting halogen guest engineering as an effective approach for optoelectronic material design. Full article

Crystalline silicon solar cells have long dominated the global photovoltaic market due to their mature manufacturing processes, excellent stability, and abundant raw material reserves, accounting for over 90% of the total PV market share. However, single−junction c−Si solar cells are approaching the Shockley–Queisser (SQ) efficiency limit of ~29.4%, creating an urgent need for next−generation PV technologies to achieve higher power conversion efficiency (PCE). Monolithic perovskite/silicon tandem solar cells (PSTSCs) stand as the most commercially promising technology to surpass the single−junction efficiency limit. Since their first demonstration in 2015, PSTSCs have experienced rapid technological advancement, with the certified PCE reaching 35.0% in 2026. This review posits that their rapid efficiency ascent is not serendipitous but driven by synergistic innovations across critical subsystems. We systematically deconstruct these efficiency drivers, encompassing top−cell materials, bottom−cell architecture, and optical management. We conclude by outlining future research frontiers essential for transforming this lab−champion technology into a mainstream energy solution. Full article

Accurate photovoltaic (PV) power prediction under limited experimental data remains a significant challenge, particularly when purely data-driven models generate predictions that violate fundamental physical constraints. This study proposes a physics-regularized neural network framework for data-efficient PV power modeling using only 45 real experimental measurements of irradiance and temperature. To address data sparsity while preserving physical realism, a physics-guided synthetic augmentation strategy is introduced to generate additional training samples strictly within experimentally validated operating bounds. The proposed Physics-Informed Neural Network (PINN) incorporates two complementary physical constraints directly into the training objective: (i) enforcement of the Shockley–Queisser thermodynamic efficiency limit to maintain compliance with theoretical conversion bounds and (ii) monotonicity regularization to ensure non-negative power gradients with respect to irradiance. Unlike conventional post-processing correction methods, these physical constraints are embedded during model training, enabling simultaneous improvement in predictive accuracy and physical consistency. When benchmarked against a structurally identical unconstrained Artificial Neural Network (ANN), the proposed framework achieves strong predictive performance (R² = 0.9947, RMSE = 5.21 W) while reducing monotonicity violations by approximately 82%. Robustness evaluations under extrapolated irradiance conditions and elevated temperature scenarios further demonstrate stable and physically admissible behavior beyond the training domain. Overall, the results demonstrate that integrating limited experimental measurements with embedded physical priors enables reliable and physically consistent PV power prediction in sparse-data environments, highlighting the potential of physics-regularized learning for renewable energy modeling applications. Full article

The discovery of quantum dots (QDs) earned a Nobel Prize and has led to widespread applications in research and technology. In this review, we focus on the use of QDs in solid-state solar cells (QDSCs). We begin with an overview of the basic principles of SCs. Then, we discuss how device architecture has developed over recent decades, setting the stage for the final section on fourth-generation solar cells (Perspective section). We also highlight progress in material development, starting with lead- and cadmium-based QDs and progressing to more recent carbon- and perovskite-based QDs. Additionally, we review materials used for electron-transport layers (ETLs) and hole-transport layers (HTLs). The articles also present recent advances in QDSCs across various QD types. In the final section, we recommend that future research focus on three main areas: QD active-layer materials, material interfaces, and device architecture. These efforts could lead to sustainable QDSCs that potentially surpass the Shockley–Queisser (SQ) limit. Full article

A new family of highly uniform, cubic-shaped Cu₃VS_xSe_4−x (CVSSe; 0 ≤ x ≤ 4) nanocrystals based on earth-abundant materials with intermediate bandgaps (IB) in the visible range is reported, synthesized via a hot-injection method. The IB transitions and optical band gap of the novel CVSSe nanocrystals are investigated using ultraviolet-visible spectroscopy, revealing tunable band gaps that span the visible and near-infrared regimes. The composition-dependent relationships among the crystal phase, optical band gap, and photoluminescence properties of the novel IB semiconductors with progressive substitution of Se by S are examined in detail. High-resolution transmission electron microscopy and scanning electron microscopy characterization confirm the high crystallinity and uniform size (~19.7 nm × 17.2 nm for Cu₃VS₄) of the cubic-shaped nanocrystals. Density functional theory (DFT) calculations based on virtual crystal approximation support the experimental findings, showing good agreement in lattice parameters and band gaps across the CVSSe series and lending confidence that the targeted phases and compositions have been successfully realized. A current conversion efficiency, i.e., incident photon-to-current efficiency, of 14.7% was achieved with the p-type IB semiconductor Cu₃VS₄. These novel p-type IB semiconductor nanocrystals hold promise for enabling thin film solar cells with efficiencies beyond the Shockley–Queisser limit by allowing sub-band-gap photon absorption through intermediate-band transitions, in addition to the conventional direct-band-gap transition. Full article

Solar thermophotovoltaic (STPV) systems can break the Shockley–Queisser (SQ) limit through selective absorbers and emitters, whose ideal emissivity is crucial as a design target. In this paper, we systematically analyze the ideal selective spectrum and solve the conflict between energy and efficiency in photothermal conversion efficiency by modifying the corresponding equation. The ideal emissivity of the absorber is one in [$E_{\mathrm{c}}$, ∞] and zero out of this range. For actual design, if spectra deviation cannot be avoided, $E_{\mathrm{c}}$ is preferable to redshifting. The ideal emissivity of the emitter is one in $[E_{\mathrm{g}},E_{\max }]$ and the decrease in $E_{\min }$ should be suppressed relative to $E_{\max }$. Besides, the optimal bandwidth of the emitter is about 0.08 eV for different photovoltaic cells and working conditions, which gives a rough and valuable guide in practical design. The analytical progress and design strategies will give a reference and direction for the future design of STPV. Full article

Multiband solar cells offer a promising route to surpass the Shockley-Queisser limit by harnessing sub-bandgap photons through three active energy band transitions. However, realizing their full potential requires overcoming key challenges in material design and device architecture. Here, we propose a novel multiband stacked anti-parallel junction solar cell structure based on highly mismatched alloys (HMAs), in particular dilute GaAsN with ~1–4% N. An anti-parallel junction consists of two semiconductor junctions connected with opposite polarity, enabling bidirectional current control. The structures of the proposed devices are based on dilute GaAsN with anti-parallel junctions, which allow the elimination of tunneling junctions—a critical yet complex component in conventional multijunction solar cells. Semiconductors with three active energy bands have demonstrated the unique properties of carrier transport through the stacked anti-parallel junctions via tunnel currents. By leveraging highly mismatched alloys with tailored electronic properties, our design enables bidirectional carrier generation through forward- and reverse-biased diodes in series, significantly enhancing photocurrent extraction. Through detailed SCAPS-1D simulations, we demonstrate that strategically placed blocking layers prevent carrier recombination at contacts while preserving the three regions of photon absorption in a single multiband semiconductor p/n junction. Remarkably, our optimized five-stacked anti-parallel junctions structure achieves a maximum theoretical conversion efficiency of 70% under 100 suns illumination, rivaling the performance of state-of-the-art six-junctions III-V solar cells—but without the fabrication complexity of multijunction solar cells associated with tunnel junctions. This work establishes that highly mismatched alloys are a viable platform for high efficiency solar cells with simplified structures. Full article

Perylenediimide derivatives are materials that exhibit singlet fission (SF), capable of absorbing a single photon to generate multiple triplet excitons. This exciton multiplication process holds the potential to surpass the Shockley-Queisser limit. To effectively harness the energy of triplet excitons, they must possess sufficient diffusion capability. However, the diffusion of triplet excitons in perylenediimide derivatives has rarely been studied. In this work, we synthesized perylenediimide derivative crystals (C5) and fabricated composites (C5-Pe-QDs) by incorporating surface-ligand-functionalized quantum dots (Pe-QDs) at varying concentrations. The Pe-QDs act as traps within the C5 crystals, capturing triplet excitons when they diffuse into their capture range. The experimental and computational results indicate that the diffusion coefficient of triplet excitons in C5 crystals is approximately 3.58 × 10⁻⁵ cm² s⁻¹, with a diffusion length of about 50.9 nm. Using Monte Carlo simulations, we estimated the triplet exciton capture probability by Pe-QDs under ideal distribution conditions to be around 79.5%. The above findings indicate that, in the C5-Pe-QDs composites, triplet excitons can efficiently diffuse to the quantum dots, providing a novel and viable pathway for the effective utilization of triplet exciton energy in silicon-based photovoltaic systems. Full article

Perovskite/Si tandem solar cells (PSTSCs) have emerged as a leading candidate for surpassing the Shockley–Queisser (SQ) efficiency limit inherent to single-junction silicon solar cells. Following their inaugural demonstration in 2015, perovskite/Si tandem solar cells have experienced remarkable technological progression, reaching a certified power conversion efficiency of 34.9% by 2025. To elucidate pathways for realizing the full potential of perovskite/Si tandem solar cells, this review commences with an examination of fundamental operational mechanisms in multi-junction photovoltaic architectures. Subsequent sections systematically analyze technological breakthroughs across three critical PSTSC components organized by an optical path sequence: (1) innovations in perovskite photoactive layers through component engineering, additive optimization, and interfacial modification strategies; (2) developments in charge transport and recombination management via advanced interconnecting layers; and (3) silicon subcell architectures. The review concludes with a critical analysis of persistent challenges in device stability, scalability, structural optimization and fabrication method, proposing strategic research directions to accelerate the transition from laboratory-scale achievements to commercially viable photovoltaic solutions. Full article

Perovskite solar cells (PSCs) have emerged as a promising contender in photovoltaics, owing to their rapidly advancing power conversion efficiencies (PCEs) and compatibility with low-temperature solution processing techniques. Single-junction architectures reveal inherent limitations imposed by the Shockley–Queisser (SQ) limit, motivating adoption of a dual-absorber structure comprising Cs₄CuSb₂Cl₁₂ (CCSC) and Cs₂TiI₆ (CTI)—lead-free perovskite derivatives valued for environmental benignity and intrinsic stability. Comprehensive theoretical screening of 26 electron/hole transport layer (ETL/HTL) candidates identified SrTiO₃ (STO) and CuSCN as optimal charge transport materials, producing an initial simulated PCE of 16.27%. Subsequent theoretical optimization of key parameters—including bulk and interface defect densities, band gap, layer thickness, and electrode materials—culminated in a simulated PCE of 30.86%. Incorporating quantifiable practical constraints, including radiative recombination, resistance, and FTO reflection, revised simulated efficiency to 26.60%, while qualitative analysis of additional factors follows later. Furthermore, comparing multiple algorithms within this theoretical framework demonstrated eXtreme Gradient Boosting (XGBoost) possesses superior predictive capability, identifying CTI defect density as the dominant impact on PCE—thereby underscoring its critical role in analogous architectures and offering optimization guidance for experimental studies. Collectively, this theoretical research delineates a viable pathway toward developing stable, environmentally sustainable PSCs with high properties. Full article

Solar cells based on the hybrid perovskite absorbers had shown very high growth of their conversion efficiency almost reaching to the Shockley–Queisser limit during last decade. However, low stability prevents to widely use them in industry and in everyday life. Possible reasons and pathways to remedy of instability and degradation of the perovskite solar cells are considered in this review. Specific attention was paid to the thermodynamical analysis of the hybrid perovskite absorber. Full article

Intermediate-band photovoltaics promise single-junction efficiencies that exceed the Shockley and Queisser limit, yet viable material platforms and device geometries remain under debate. Here, we perform comprehensive two-dimensional device-scale simulations using Silvaco Atlas TCAD to analyze p-i-n In_0.20Ga_0.80N solar cells in which the intermediate band is supplied by In_0.35Ga_0.65N quantum dots located inside the intrinsic layer. Quantum-dot diameters from 1 nm to 10 nm and areal densities up to 116 dots per period are evaluated under AM 1.5G, one-sun illumination at 300 K. The baseline pn junction achieves a simulated power-conversion efficiency of 33.9%. The incorporation of a single 1 nm quantum-dot layer dramatically increases efficiency to 48.1%, driven by a 35% enhancement in short-circuit current density while maintaining open-circuit voltage stability. Further increases in dot density continue to boost current but with diminishing benefit; the highest efficiency recorded, 49.4% at 116 dots, is only 1.4 percentage points above the 40-dot configuration. The improvements originate from two-step sub-band-gap absorption mediated by the quantum dots and from enhanced carrier collection in a widened depletion region. These results define a practical design window centred on approximately 1 nm dots and about 40 dots per period, balancing substantial efficiency gains with manageable structural complexity and providing concrete targets for epitaxial implementation. Full article

Solar photovoltaic (PV) technology is developing quickly due to the continual rise in demand for energy and environmental protection. Solar thermal photovoltaic (STPV) systems can break the Shockley–Queisser limit of conventional PV systems by reshaping the solar spectrum using selective absorbers and emitters. However, the traditional design method relies on the designer’s experience, which fails to achieve rapid designing of STPV devices and greatly improve the performance. In this paper, an STPV thin-film selective emitter is inversely designed based on a genetic algorithm. The optimized structure consists of SiO₂ and SiC layers alternately stacked on a Cr substrate, whose emissivity can reach 0.99 at 1.86 μm. When combined with an InGaAsSb cell, the power conversion efficiency can be up to 43.3% at 1673 K. This straightforward and easily scalable film emitter can be designed quickly and gain excellent efficiency, which promotes the practical application of STPV systems. Full article