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Developments in Perovskite Solar Cells
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Developments in Perovskite Solar Cells

A special issue of Solar (ISSN 2673-9941).

Deadline for manuscript submissions: 30 May 2025 | Viewed by 7009

Special Issue Editor

Dr. Terry Chien-Jen Yang

E-Mail Website
Guest Editor
Department of Chemical Engineering and Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, UK
Interests: photovoltaic materials; perovskite solar cells; multijunction solar cells; silicon
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Welcome to this Special Issue of the open-access journal Solar on the topic of “Developments in Perovskite Solar Cells”. Perovskites are a type of material with the same crystal structure as the mineral calcium titanium oxide (the first perovskite crystal that was discovered). In general, perovskite compounds have the formula, ABX3, where A and B are cations and X is an anion that bonds to both. Ever since the first perovskite solar cell was reported by Miyasaka et al. in 2009 with an efficiency of 3.8%, perovskite solar cells have rapidly become a hot research topic as a promising photovoltaic technology due to their significant potential for high efficiency and low production costs. Furthermore, perovskites are a versatile material that allows for high tunability compared to conventional silicon-based solar cells. Single-junction perovskite solar cells have since surpassed 25% with the highest perovskite-based tandem device (perovskite/silicon) over 32%. This Special Issue is open to a broad range of topics within the perovskite solar cell field, including but not limited to the following:

  • Long-term stability
  • Lead-free non-toxic solutions
  • Deposition methods and techniques
  • Tandem and multijunction devices
  • Commercialization aspects
  • Perovskite materials characterization
  • Perovskite nanocrystals, quantum well, or quantum dots
  • Reverse bias, hysteresis, and ion migration studies
  • Interfaces and surface recombination
  • Electron and hole transport materials
  • Machine learning, deep learning, and artificial intelligence

Additional related topics in the field of perovskite solar cells are most welcome and we look forward to your submission.

Dr. Terry Chien-Jen Yang
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Solar is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • perovskite
  • solar cells
  • efficiency
  • stability
  • non-toxic
  • bandgap
  • tandem
  • multijunction

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Published Papers (2 papers)

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Research

17 pages, 5705 KiB  
Article
Development of n-Type, Passivating Nanocrystalline Silicon Oxide Films via Plasma-Enhanced Chemical Vapor Deposition
by Gurleen Kaur, Antonio J. Olivares and Pere Roca i Cabarrocas
Solar 2024, 4(1), 162-178; https://doi.org/10.3390/solar4010007 - 11 Mar 2024
Viewed by 1883
Abstract
Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with varied applications in solar cells as a transparent front contact, intermediate reflector, back reflector layer, and even tunnel layer for passivating contacts, owing to the easy tailoring of its optical properties. In this work, [...] Read more.
Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with varied applications in solar cells as a transparent front contact, intermediate reflector, back reflector layer, and even tunnel layer for passivating contacts, owing to the easy tailoring of its optical properties. In this work, we systematically investigate the influence of the gas mixture (SiH4, CO2, PH3, and H2), RF power, and process pressure on the optical, structural, and passivation properties of thin n-type nc-SiOx:H films prepared in an industrial, high-throughput, plasma-enhanced chemical vapor deposition (PECVD) reactor. We provide a detailed description of the n-type nc-SiOx:H material development using various structural and optical characterization techniques (scanning electron microscopy (SEM), energy dispersive X-ray (EDX), Raman spectroscopy, and spectroscopic ellipsometry) with a focus on the relationship between the material properties and the passivation they provide to n-type c-Si wafers characterized by their effective carrier lifetime (τeff). Furthermore, we also outline the parameters to be kept in mind while developing different n-type nc-SiOx:H layers for different solar cell applications. We report a tunable optical gap (1.8–2.3 eV) for our n-type nc-SiOx:H films as well as excellent passivation properties with a τeff of up to 4.1 ms (implied open-circuit voltage (iVoc)~715 mV) before annealing. Oxygen content plays an important role in determining the crystallinity and hence passivation quality of the deposited nanocrystalline silicon oxide films. Full article
(This article belongs to the Special Issue Developments in Perovskite Solar Cells)
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15 pages, 5751 KiB  
Article
Simulation of Lead-Free Heterojunction CsGeI2Br/CsGeI3-Based Perovskite Solar Cell Using SCAPS-1D
by Abraham Dimitri Kapim Kenfack, Nicolas Matome Thantsha and Mandla Msimanga
Solar 2023, 3(3), 458-472; https://doi.org/10.3390/solar3030025 - 7 Aug 2023
Cited by 4 | Viewed by 4142
Abstract
This paper presents the simulation of the novel prototype of a heterojunction perovskite solar cell (PSC) based on CSGeI2Br/CSGeI3. The device consists of two absorber layers (CSGeI2Br, CSGeI3 [...] Read more.
This paper presents the simulation of the novel prototype of a heterojunction perovskite solar cell (PSC) based on CSGeI2Br/CSGeI3. The device consists of two absorber layers (CSGeI2Br, CSGeI3), an electron transport layer (ETL) chosen as TiO2 and a hole transport layer (HTL) given as poly(3-hexylthiophene) (P3HT). Within the simulation, the effects of thickness, doping and defect density in each absorber layer and different back contact metal electrodes on electrical parameters (efficiency, short circuit current, open circuit voltage, and fill factor) are evaluated. In addition, the contribution of the HTL (doping density and thickness), temperature, shunt and series resistance were also checked on the same electrical parameters. The simulations are conducted in standard test conditions with the irradiation normalized as 0.1 W/cm2 using the SCAPS-1D platform. The maximum efficiency obtained within the simulation of this device was about 31.86%. For this device, the thickness of the CSGeI3 layer should be around 900 nm, while that of the CsGeI2Br should be around 100 nm to facilitate optimal absorption of the incident photons. The doping density in the absorber layer is such that in CsGeI3 should be around 1018 cm−3 and around 1016 cm−3 in the CsGeI2Brlayer. The defects densities in both layers of the perovskite materials should be around 1014 cm−3. Concerning the HTL, the thickness and the doping density of the P3HT should be around 50 nm and  1018 cm−3, respectively. In terms of the back contact electrode, the work function of the metal should be at least equal to 5 eV, corresponding to gold (Au) metal. The series resistance due to the connection of the cell to the external load should be very small, while the shunt resistance due to the leakage current in the solar cell should be high. Furthermore, the operating temperature of the new PSC should be maintained at an ambient level of around 25 °C in order to deliver high efficiency. Full article
(This article belongs to the Special Issue Developments in Perovskite Solar Cells)
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