Search Results (251)

Efficient conversion of biomass-based platform molecules into high-value derivatives is recognized as one formidable challenge in biomass upgrading. In this work, a one-pot deep eutectic solvents-assisted solvothermal method was developed for the modification of the commercial Pt/C catalysts by introducing a secondary metal (M = Sn, Bi, Ge, Sb, Pb). The structural and electronic properties of the catalysts were precisely tuned. Among the screened metals, the addition of Sn yielded the most significant improvement in catalytic activity. The optimized PtSn_0.5/C-140 catalyst achieved superior furfural (FAL) conversion and furfuryl alcohol (FOL) selectivity under mild conditions (20 °C, 2 MPa H₂). Comprehensive characterizations, including XRD, HRTEM, XPS, and H₂-TPD, confirmed the formation of Pt-Sn solid-solution phase. Furthermore, Characterization and reaction results revealed that the electronic and geometric effects induced by Sn modulated Pt active sites, significantly enhancing the adsorption of the active H species. Additionally, the SnO_x species adjacent to the Pt-Sn sites served as hydrogen spillover acceptors, further accelerating the hydrogenation process. The synergy between the Pt-Sn solid-solution phase and SnO_x species is identified as the origin of the superior performance at room temperature. These findings provide a new strategy for the design of high-performance biomass conversion catalysts by upgrading commercial noble metal catalysts. Full article

This investigation comparatively examined the toxicological, chemical, phytochemical, and antimicrobial characteristics of Paliurus spina-christi Mill. seeds and their oils collected over two consecutive years from four distinct locations in Türkiye. In the seeds, HCN levels ranged from 1.11 to 1.43 g/kg and total phenolics from 6.84 to 15.48 mg GAE/g, while quinic, gallic, protocatechlic, and tannic acids, along with cosmosiin, were identified as the main phenolics in the phenolic profile. In the seed oils, α-tocopherol content ranged from 2178.5 to 2528.4 mg/kg, total phenolics from 96.99 to 118.87 mg GAE/g, and antioxidant activity from 0.147 to 0.150 mg TE/g. β-Sitosterol predominated among sterols (61.51–66.51%). Macrominerals P, S, K, and Ca and microminerals Si, Pt, Pd, Ge, and Sn were present in notable amounts. An antimicrobial activity test revealed the bacteriostatic effects of the seed oils. In conclusion, this study elucidates the toxicological, chemical, phytochemical, and antimicrobial attributes of P. spina-christi seeds and oils, showing that the proportions of the identified bioactive components varied according to harvest year and location. Based on this data, it is recommended that further research is conducted in the future regarding the potential use of P. spina-christi seeds/seed oil for human nutrition, in terms of standardization, bioavailability, and clinical validation. Full article

Some cast metallic alloys for ultra-high-temperature structural applications can have better mechanical properties compared with Ni-based superalloys. Research on the directional solidification (DS) of such alloys is limited. The production of DS components of these alloys with “tailor-made” microstructures in different parts of the component has not been considered. This paper attempts to address these issues. A bar of the RCCA/RM(Nb)IC with nominal composition 3.5Al–4Crc6Ge–1Hf–5Mo–36Nb–22Si–1.5Sn–20Ti–1W (at.%) was directionally grown using OFZ processing, where the growth rate R increased from 1.2 to 6 and then to 15 cm/h. The paper studies how the macrosegregation of the elements affected the microstructure in different parts of the bar. It was shown that the synergy of macrosegregation and growth rate produced microstructures from the edge to the centre of the OFZ bar and along the length of the OFZ bar that differed in type and chemical composition as R increased. Contamination with oxygen was confined to the “root” of the part of the bar that was grown with R = 1.2 cm/h. The concentrations of elements in the bar were related (a) to each of the parameters VEC, Δχ, and δ for different sections, (i) across the thickness and (ii) along the length of the bar, or to each other for different sections of the bar, and demonstrated the synergy and entanglement of processing, parameters, and elements. In the centre of the bar, the phases were the Nb_ss and Nb₅Si₃ for all R values. In the bar, the silicide formed with Nb/(Ti + Hf) less or greater than one. There was synergy of solutes in the solid solution and the silicide for all R values, and synergy and entanglement of the two phases. Owing to the synergy and entanglement of processing, parameters, elements, and phases, properties would “emerge” in each part of the bar. The creep and oxidation properties of the bar were calculated as guided by the alloy design methodology NICE. It was suggested that, in principle, a component based on a metallic UHTM with “functionally graded” composition, microstructure and properties could be directionally grown. Full article

With the discovery of amorphous oxide semiconductors, a new era of electronics opened. Indium gallium zinc oxide (IGZO) overcame the problems of amorphous and poly-silicon by reaching mobilities of ~10 cm²/Vs and demonstrating thin-film transistors (TFTs) are easy to manufacture on transparent and flexible substrates. However, mobilities over 30 cm²/Vs have been difficult to reach and other materials have been introduced. Recently, polycrystalline In₂O₃ has demonstrated breakthroughs in the field. In₂O₃ TFTs have attracted attention because of their high mobility of over 100 cm²/Vs, which has been achieved multiple times, and because of their use in scaled devices with channel lengths down to 10 nm for high integration in back-end-of-the-line (BEOL) applications and others. The present review focuses first on the material properties with the understanding of the bandgap value, the importance of the position of the charge neutrality level (CNL), the doping effect of various atoms (Zr, Ge, Mo, Ti, Sn, or H) on the carrier concentration, the optical properties, the effective mass, and the mobility. We introduce the effects of the non-parabolicity of the conduction band and how to assess them. We also introduce ways to evaluate the CNL position (usually at ~E_C + 0.4 eV). Then, we describe TFTs’ general properties and parameters, like the field effect mobility, the subthreshold swing, the measurements necessary to assess the TFT stability through positive and negative bias temperature stress, and the negative bias illumination stress (NBIS), to finally introduce In₂O₃ TFTs. Then, we will introduce vacuum and non-vacuum processes like spin-coating and liquid metal printing. We will introduce the various dopants and their applications, from mobility and crystal size improvements with H to NBIS improvements with lanthanides. We will also discuss the importance of device engineering, introducing how to choose the passivation layer, the source and drain, the gate insulator, the substrate, but also the possibility of advanced engineering by introducing the use of dual gate and 2 DEG devices on the mobility improvement. Finally, we will introduce the recent breakthroughs where In₂O₃ TFTs are integrated in neuromorphic applications and 3D integration. Full article

The effects of Ge⁴⁺ substitution on the microwave dielectric properties of inverse spinel Mg₂SnO₄ ceramics were systematically investigated. A series of Mg₂(Sn_1−xGe_x)O₄ (x = 0.00–0.05) ceramics were synthesized via solid-state reaction and sintered at 1450–1600 °C. X-ray diffraction confirmed single-phase inverse spinel structures (Fd-3 m) for compositions up to x = 0.03, while minor MgSnO₃ secondary phases appeared at x = 0.05. Rietveld refinement revealed a linear decrease in lattice parameter from 8.6579 Å (x = 0) to 8.6325 Å (x = 0.05), consistent with Vegard’s law for the substitution of smaller Ge⁴⁺ (0.53 Å, Shannon ionic radius, octahedral coordination) for Sn⁴⁺ (0.69 Å, Shannon ionic radius, octahedral coordination) in octahedral sites. Optimal dielectric properties were achieved at x = 0.03 sintered at 1550 °C; the dielectric constant (ε_r) increased from 7.6 to 8.0, while the quality factor (Qf) improved by 19% from 56,200 to 67,000 GHz, which is attributed to reduced phonon scattering from Ge-induced lattice contraction. The temperature coefficient of resonant frequency (τ_f) remained stable (−64 to −68 ppm/°C) across all compositions. Property degradation at x = 0.05 correlated with the onset of Ge⁴⁺ solubility limit and MgSnO₃ formation. These results demonstrate that controlled Ge⁴⁺ substitution effectively enhances the microwave dielectric performance of Mg₂SnO₄ ceramics for communication applications. Full article

Copper anode slime (CAS), obtained from non-standard anodes by pyro-hydrometallurgical electronic waste (e-waste) processing, contains high concentrations of lead, tin (as metastannic acid), and base (Cu, Fe, Zn), precious (Au, Ag), and technological metals (In, Ga, Ge), which limit the efficiency of conventional valorization methods. In this study, an integrated alkali fusion–leaching process was applied to non-standard CAS. Thermodynamic modeling defined the key parameters for selective phase transformations and efficient metal separation. These parameters were experimentally investigated, and the optimized fusion conditions (CAS:NaOH = 40:60, 600 °C, 60 min), followed by water leaching (200 g/dm³, 80 °C, 60 min, 250 rpm), resulted in >97% Sn removal efficiency. Simultaneously, Au and Ag losses were negligible, resulting in solid residue enrichment. Oxidant addition (NaNO₃) did not improve Sn removal but increased Fe, Pb, and Ag solubility, reducing selectivity. The scaled-up test confirmed process reproducibility, achieving 97.75% Sn dissolution and retention of precious metals in the PbO-based residue (99.99% Au, 99.78% Ag). Application of an integrated thermodynamic modeling, laboratory optimization, and scaled-up validation approach to non-standard CAS provides a relevant framework for a selective, efficient, and scalable method addressing industrial needs driven by increased e-waste co-processing, contributing to sustainable metal recovery. Full article

The creation of novel, effective materials with specific properties is necessary to advance technology. To do this, objective regularities between the material’s composition, structure, and properties must be found. A comparative analysis of glass-forming regions, arranged according to the systematic substitution of one element by its analog within a periodic system subgroup, provides a useful framework for discussing trends in glass formation in semiconductor alloys. In this review, the information on the glass formation in the chalcogenide systems GeSe₂–As₂Se₃–MeCh, where Me = Cu, Ag, Zn, Cd, Sn, Pb; Ch = Se, Te, was subjected to a thorough comparative analysis to establish objective patterns in the change in the glass-forming ability in these systems. The effect of MeCh on the formation of glass in the binary system GeSe₂–As₂Se₃ was traced. Full article

Gallium (Ga) enrichment in sphalerite has been widely recognized; however, its enrichment mechanisms remain insufficiently understood. The South Hunan district, located at the intersection of the Nanling Region and the Qin-Hang Metallogenic Belt in South China, is characterized by abundant Jurassic magmatic-hydrothermal Pb–Zn deposits, which typically host Ga-depleted sphalerite. Recently, Ga-enriched sphalerite (up to 385 ppm by LA-ICP-MS) has been identified in newly drilled cores at Zhaojinci, adding complexity to the regional Pb–Zn metallogenic framework. EPMA elemental mapping and LA-ICP-MS time-resolved spectra indicate that Ga is homogeneously distributed within sphalerite, excluding the presence of micron-scale Ga-bearing mineral inclusions. A strong positive correlation between Ga and Cu concentrations suggests that Ga incorporation is facilitated by the coupled substitution of Zn²⁺ by Cu⁺. Sphalerite geothermometry yields formation temperatures of 118–138 °C (average 126 °C for GGIMF is and ~129 °C for SPRFT), accompanied by intermediate sulfur fugacity conditions (lg fS₂ = −22.9 to −21.2), which appear to favor Ga enrichment in sphalerite. The trace element geochemistry of the Zhaojinci sphalerite (Ga-Ge-Cd-enriched and Mn-In-Sn-Co-depleted), combined with its formation under low-temperature (120–180 °C) and intermediate fS₂ conditions (within the pyrite stability field), is consistent with MVT-like mineralization. This interpretation is supported by multiple lines of geological evidence, including the strict confinement of stratabound Pb–Zn mineralization to the Devonian Xikuangshan Formation limestone, structural control by syn-sedimentary normal faults, pervasive dolomitization of the host rocks, and the absence of genetic relationship to magmatic activity. Moreover, the sphalerite geochemical signature, corroborated by an XGBoost-based machine learning classifier, reinforce the MVT-like affinity for the Zhaojinci mineralization. This study not only emphasizes the importance of low-temperature and intermediate-fS₂ conditions in Ga enrichment within sphalerite, but also highlights the significance of discovering MVT-like sphalerite for Pb–Zn resource exploration in the South Hunan district, providing valuable new insights and directions for mineral prospecting in this geologically important region of South China. Full article

The earth-abundant, ecologically friendly structure of kesterite Cu₂ZnSn(S,Se)₄ (CZTSe) solar cells, with their advantageous optoelectronic characteristics, including a direct bandgap (1.0–1.5 eV) and a high optical absorption coefficient (>10⁴ cm⁻¹), have made them a very promising member of thin-film photovoltaics. However, the path toward commercialization has been slowed down by restraint such as high open-circuit voltage deficits, deep-level defect states, and compositional inhomogeneities that lead to charge recombination and efficiency loss. Despite these obstacles, very recent advances in material processing and device engineering have revitalized this technology. Incorporating elements like Ge, Ag, and Li; optimizing interface properties; and introducing methods like hydrogen-assisted selenization have all contributed to raising device efficiencies by around 15%. This review discusses recent progress and evaluates how far CZTSSe has come and what remains to be done to realize its commercial promise. Full article

Ru₃Sn₇ crystallizes in the cubic Ir₃Ge₇-type structure (space group Im3m), a class of intermetallic compounds. Previous studies focused primarily on its crystal structure, band calculations, and basic transport properties. Here, we report a systematic investigation of high-quality single crystals via electrical resistivity, Hall effect, specific heat, and thermal transport measurements. The T₃X₇ intermetallic family—with its diverse electronic ground states—provides an ideal platform for exploring such topology–property relationships. Ru₃Sn₇ exhibits metallic behavior, with consistent Hall effect and Seebeck coefficient data indicating a compensated electron-hole two-band system. Temperature-dependent modulation of electronic states near the Fermi surface alters charge carrier transport, which may imply the presence of a Lifshitz transition in Ru₃Sn₇. More importantly, magnetic quantum oscillations are observed for the first time, confirming the presence of two Dirac points in its band structure. Full article

The Dulong Sn-polymetallic deposit in Yunnan Province of southwestern China serves as a unique case study for unraveling the evolution of skarn systems and tin mineralization. Four distinct garnet types (Grt I to Grt IV) were classified based on petrographic observations. Compositional analysis reveals a progression from Grt I to Grt III, marked by increasing andradite components, and elevated tin concentrations, peaking at 5039 ppm. These trends suggest crystallization from Sn-enriched magmatic-hydrothermal fluids. In contrast, Grt IV garnet exhibits dominant almandine components and minimal tin content (<2 ppm). Its association with surrounding rocks (schist) further implies its metamorphic origin, distinct from the magmatic origin of the other garnet types. Combined with previously published sulfur and lead isotopic data, as well as trace element compositions of garnet, our study suggests that Laojunshan granites supply substantial ore-forming elements such as S, Pb, W, Sn, In, and Ga. In contrast, elements such as Sc, Y, and Ge are inferred to be predominantly derived from, or buffered by, the surrounding rocks. The geochemical evolution of the garnets highlights the critical role of redox fluctuations and fluid chemistry in controlling tin mineralization. Under neutral-pH fluid conditions, early-stage garnets incorporated significant tin. As the oxygen fugacity of the ore-forming fluid declined, cassiterite precipitation was triggered, leading to tin mineralization. This study reveals the interplay between fluid redox dynamics, garnet compositional changes, and mineral paragenesis in skarn-type tin deposits. Full article

Uncooled microbolometers play a pivotal role in infrared detection owing to their compactness, low power consumption, and cost-effectiveness. This review comprehensively summarizes recent progress in thermistor materials and focal plane arrays (FPAs), highlighting improvements in sensitivity and integration. Vanadium oxide (VO_x) remains predominant, with Al-doped films via atomic layer deposition (ALD) achieving a temperature coefficient of resistance (TCR) of −4.2%/K and significant 1/f noise reduction when combined with single-walled carbon nanotubes (SWCNTs). Silicon-based materials, such as phosphorus-doped hydrogenated amorphous silicon (α-Si:H), exhibit a TCR exceeding −5%/K, while titanium oxide (TiO_x) attains TCR values up to −7.2%/K through ALD and annealing. Emerging materials including GeSn alloys and semiconducting SWCNT networks show promise, with SWCNTs achieving a TCR of −6.5%/K and noise equivalent power (NEP) as low as 1.2 mW/√Hz. Advances in FPA technology feature pixel pitches reduced to 6 μm enabled by vertical nanotube thermal isolation, alongside the 3D heterogeneous integration of single-crystalline Si-based materials with readout circuits, yielding improved fill factors and responsivity. State-of-the-art VO_x-based FPAs demonstrate noise equivalent temperature differences (NETD) below 30 mK and specific detectivity (D*) near 2 × 10¹⁰ cm⋅Hz ^1/2/W. Future advancements will leverage materials-driven innovation (e.g., GeSn/SWCNT composites) and process optimization (e.g., plasma-enhanced ALD) to enable ultra-high-resolution imaging in both civil and military applications. This review underscores the central role of material innovation and system optimization in propelling microbolometer technology toward ultra-high resolution, high sensitivity, high reliability, and broad applicability. Full article

Cubic phase SnSe-based materials have great potential in the field of thermoelectricity due to their reduced carrier scattering, increased band degeneracy, and ultra-low lattice thermal conductivity. Nevertheless, systematic studies on the influence of element doping on the thermoelectric properties of cubic SnSe-based materials are still relatively scarce. To enrich the research in this field, this work investigates the effects of Ge doping on the phase composition, electrical and thermal transport properties of cubic Sn_0.50Ag_0.25Bi_0.25Se_0.50Te_0.50 thermoelectric materials. X-ray diffraction (XRD) analysis confirmed that the Ge-doped samples exhibited a single cubic phase structure, while scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS) revealed a uniform distribution of elements within the samples. The results indicate that increasing the Ge doping content substantially enhances their electrical conductivity, albeit at the expense of elevated thermal conductivity. By optimizing the content of Ge-doping, the thermoelectric figure of merit (ZT) reached 0.74 at 750 K. Notably, while moderate Ge doping enhances electrical transport properties, excessive doping leads to a significant rise in thermal conductivity, ultimately constraining further thermoelectric performance gains. Full article

Germanium/tin-containing silicon oxide [SiO–(GeO/SnO)] nanoclusters have been designed with different Si/Ge/Sn particles and characterized as electrodes for magnesium-ion batteries (MIBs) due to forming MgBe [SiO–GeO], MgBe [SiO–SnO], MgCa [SiO–GeO], and MgCa [SiO–SnO] complexes. In this work, alkaline earth metals of magnesium (Mg), beryllium (Be), and calcium (Ca) have been studied in hybrid Mg-, Be-, and Ca-ion batteries. An expanded investigation on H capture by MgBe [SiO–(GeO/SnO)] or MgCa [SiO–(GeO/SnO)] complexes was probed using computational approaches due to density state analysis of charge density differences (CDD), total density of states (TDOS), and electron localization function (ELF) for hydrogenated hybrid clusters of MgBe [SiO–GeO], MgBe [SiO–SnO], MgCa [SiO–GeO], and MgCa [SiO–SnO]. Replacing Si by Ge/Sn content can increase battery capacity through MgBe [SiO–GeO], MgBe [SiO–SnO], MgCa [SiO–GeO], and MgCa [SiO–SnO] nanoclusters for hydrogen adsorption processes and could improve the rate performances by enhancing electrical conductivity. A small portion of Mg, Be, or Ca entering the Si–Ge or Si–Sn layer to replace the alkaline earth metal sites could improve the structural stability of the electrode material at high multiplicity, thereby improving the capacity retention rate. In fact, the MgBe [SiO–GeO] remarks a small enhancement in charge transfer before and after hydrogen adsorption, confirming the good structural stability. In addition, [SiO–(GeO/SnO)] anode material could augment the capacity owing to higher surface capacitive impacts. Full article

We performed the microscopic calculation of $\beta$-decay properties for waiting-point nuclei with neutron-closed magic shells. Allowed Gamow–Teller (GT) and first-forbidden (FF) transitions were simulated using a schematic model (SM) for waiting-point N = $50,82$ isotopes in the framework of a proton–neutron quasiparticle random phase approximation ($pn$-QRPA). The Woods–Saxon (WS) potential basis was used in our calculations. The $pn$-QRPA equations of allowed (GT) and (FF) transitions were utilized in both the particle–hole ($ph$) and particle–particle ($pp$) channels in the SM. We solved the secular equations of the GT and FF transitions for eigenvalues and eigenfunctions of the corresponding Hamiltonians. A spherical shape was assigned to each waiting-point nucleus in all simulations. Significantly, this study marks the first time that $\beta$-decay analysis has been applied to certain nuclei, including ⁸²Ge₅₀, ⁸³As₅₀, ⁸⁴Se₅₀, ⁸⁵Br₅₀ and ⁸⁷Rb₅₀ with $N=50$ isotones, and ¹³²Sn₈₂, ¹³³Sb₈₂, ¹³⁴Te₈₂, ¹³⁵I₈₂ and ¹³⁷Cs₈₂ with $N=82$ isotones. Since there is no prior theoretical research on these nuclei, this work is a unique addition to the field. We compared our results with the previous calculations and measured data, and our calculations agree with the experimental data and the other theoretical results. Full article