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Semiconductor Sensors towards Optoelectronic Device Applications

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A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Electronic Sensors".

Deadline for manuscript submissions: closed (30 September 2023) | Viewed by 4794

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Special Issue Editors

Dr. Zhihua Li

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Guest Editor

Institute of Microelectronics Chinese Academy of Sciences, Beijing, China
Interests: silicon photonics technology

Dr. Manwen Liu

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Guest Editor

Institute of Microelectronics Chinese Academy of Sciences, Beijing 100029, China
Interests: silicon detector; semiconductor sensor; X-ray detection; near-infrared detection; radiation detector; 3D detector; pixel detector; APD; SPAD; SiPM

Dr. Yunyun Fan

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Guest Editor

The Institute of High Energy Physics, Chinese Academia of Science, Beijing 100049, China
Interests: silicon detector; radiation hardness silicon detector; low gain avalanche diodes; X-ray detector

Dr. Zhijun Liang

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Guest Editor

The Institute of High Energy Physics, Chinese Academia of Science, Beijing 100049, China
Interests: semiconductor sensor; radiation hardness silicon detector; timing detector; X-ray detection

Special Issue Information

Dear Colleagues,

With the growing demand for semiconductor optoelectronic sensor chips in scientific research, aerospace, biomedical and industrial, it is urgent to develop low cost, high performance, fast response and radiation resistant sensors. We would like to invite you to submit your contributions to the Special Issue “Semiconductor Sensors towards Optoelectronic Device Applications”. The Special Issue aims to comprehensively display state-of-the-art optoelectronic sensor/detector technology, including design, simulation, process manufacturing, and measurement. Its applications include full spectrum photon and particle detection, such as detection modules used in quantum information processing, quantum secure communication, Lidar, cosmology, and other fields, photonic sensors for wearable healthcare and medical imaging technologies, X-ray detector with radiation hardness properties, and so on. Both theoretical research, process methods and system measurements are welcome to contribute.

Dr. Zhihua Li
Dr. Manwen Liu
Dr. Yunyun Fan
Dr. Zhijun Liang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

optoelectronic sensor
particle detection
photonic sensors
lidar
photodiode
semiconductor sensor
radiation hardness detector
3D detector
pixel detector
avalanche photodiode

Published Papers (3 papers)

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Research

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10 pages, 3160 KiB

Open AccessCommunication

PbS QD-Coated Si Micro-Hole Array/Graphene vdW Schottky Near-Infrared Photodiode for PPG Heart Rate Measurement

by Mingyuan Xu, Yinghao Cui, Tao Zhang, Mengxue Lu and Yongqiang Yu

Sensors 2023, 23(16), 7214; https://doi.org/10.3390/s23167214 - 16 Aug 2023

Cited by 1 | Viewed by 1228

Abstract

Near-infrared (NIR) photodetectors (PDs) have attracted much attention for use in noninvasive medical diagnosis and treatments. In particular, self-filtered NIR PDs are in high demand for a wide range of biomedical applications due to their ability for wavelength discrimination. In this work, we designed and then fabricated a Si micro-hole array/Graphene (Si MHA/Gr) van der Waals (vdW) Schottky NIR photodiode using a PbS quantum dot (QD) coating. The device exhibited a unique self-filtered NIR response with a responsivity of 0.7 A/W at −1 V and a response speed of 61 μs, which is higher than that seen without PbS QD coating and even in most previous Si/Gr Schottky photodiodes. The light trapping of the Si MHA and the PbS QD coating could be attributed to the high responsivity of the vdW photodiode. Furthermore, the presented NIR photodiode could also be integrated in photoplethysmography (PPG) for real-time heart rate (HR) monitoring. The extracted HR was in good accord with the values measured with the patient monitor—determined by analyzing the Fourier transform of the stable and reliable fingertip PPG waveform—suggesting its potential for practical applications. Full article

(This article belongs to the Special Issue Semiconductor Sensors towards Optoelectronic Device Applications)

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14 pages, 3875 KiB

Open AccessArticle

Pixel-Grouping G(E) Functions for Estimating Dose Rates from Unknown Source Distributions with a Position-Sensitive Detector

by Hojik Kim, Junhyeok Kim, Jisung Hwang, Kilyoung Ko and Gyuseong Cho

Sensors 2023, 23(10), 4591; https://doi.org/10.3390/s23104591 - 9 May 2023

Viewed by 1111

Abstract

Estimating accurate radiation doses when a radioactive source’s location is unknown can protect workers from radiation exposure. Unfortunately, depending on a detector’s shape and directional response variations, conventional G(E) function can be prone to inaccurate dose estimations. Therefore, this study estimated accurate radiation doses regardless of source distributions, using the multiple G(E) function groups (i.e., pixel-grouping G(E) functions) within a position-sensitive detector (PSD), which records the response position and energy inside the detector. Investigations revealed that, compared with the conventional G(E) function when source distributions are unknown, this study’s proposed pixel-grouping G(E) functions improved dose estimation accuracy by more than 1.5 times. Furthermore, although the conventional G(E) function produced substantially larger errors in certain directions or energy ranges, the proposed pixel-grouping G(E) functions estimate doses with more uniform errors at all directions and energies. Therefore, the proposed method estimates the dose with high accuracy and provides reliable results regardless of the location and energy of the source. Full article

(This article belongs to the Special Issue Semiconductor Sensors towards Optoelectronic Device Applications)

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Other

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12 pages, 2820 KiB

Open AccessPerspective

Design and Fabrication of Broadband InGaAs Detectors Integrated with Nanostructures

by Bo Yang, Yizhen Yu, Guixue Zhang, Xiumei Shao and Xue Li

Sensors 2023, 23(14), 6556; https://doi.org/10.3390/s23146556 - 20 Jul 2023

Cited by 2 | Viewed by 1528

Abstract

A visible–extended shortwave infrared indium gallium arsenide (InGaAs) focal plane array (FPA) detector is the ideal choice for reducing the size, weight and power (SWaP) of infrared imaging systems, especially in low-light night vision and other fields that require simultaneous visible and near-infrared light detection. However, the lower quantum efficiency in the visible band has limited the extensive application of the visible–extended InGaAs FPA. Recently, a novel optical metasurface has been considered a solution for a high-performance semiconductor photoelectric device due to its highly controllable property of electromagnetic wave manipulation. Broadband Mie resonator arrays, such as nanocones and nanopillars designed with FDTD methods, were integrated on a back-illuminated InGaAs FPA as an AR metasurface. The visible–extended InGaAs detector was fabricated using substrate removal technology. The nanostructures integrated into the Vis-SWIR InGaAs detectors could realize a 10–20% enhanced quantum efficiency and an 18.8% higher FPA response throughout the wavelength range of 500–1700 nm. Compared with the traditional AR coating, nanostructure integration has advantages, such as broadband high responsivity and omnidirection antireflection, as a promising route for future Vis-SWIR InGaAs detectors with higher image quality. Full article

(This article belongs to the Special Issue Semiconductor Sensors towards Optoelectronic Device Applications)

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