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Photoelectric Device and Sensing Technologies

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (29 February 2024) | Viewed by 937

Special Issue Editors


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Guest Editor
School of Microelectronics, Hefei University of Technology, Hefei 230009, China
Interests: near-infrared photodetector; van der Waals photodiode; photoplethysmography (PPG) sensor; single-pixel imaging; two-dimensional photoelectric materials
School of Microelectronics, Hefei University of Technology, Hefei 230009, China
Interests: two-dimensional (2D) materials and device; photodetector; van der Waals heterostructure; perovskite-based optoelectronic device

Special Issue Information

Dear Colleagues,

Photoelectric sensing is showing increasing application in wearable electronics, providing opportunities for personal health and medical monitoring. With the development of wearable optoelectronic technologies, photoplethysmography has become a powerful technique for noninvasive, inexpensive and convenient cardiovascular disease monitoring. The photodetector is a vital component of the photoplethysmography platform, which is used to detect back-scattered or transmitted light response to variation in blood volume, in order to obtain physiological parameters. It is urgent to develop high-performance, low-cost photoelectric sensing for wearable electronics.

In this Special Issue, we invite you to contribute your novel research work and innovative progress regarding photoelectric devices and their sensing technologies in wearable electronics. We encourage manuscript submissions of work related to optical materials and devices and photodetectors. The purpose of this issue is to highlight the recent progress and trends in innovative photoelectric devices, sensing technologies and their applications in health monitoring and imaging. Areas of interest include (but are not limited to):

  • Photodetectors based on 2D materials or perovskites;
  • Photoelectric device for sensing;
  • Photodetector application for single-pixel image;
  • Flexible photoelectric sensors;
  • Photodetectors for visible NIR detection;
  • Photoplethysmography sensor, wave and signal processing;
  • Photoelectric device for heart rate and blood pressure monitoring;
  • Integrated photoelectric device for sensing applications.

Dr. Yongqiang Yu
Dr. Yan Zhang
Guest Editors

Manuscript Submission Information

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Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Sensors is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetector
  • flexible photoelectric sensors
  • photoplethysmography
  • health monitoring
  • imaging

Published Papers (1 paper)

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Research

14 pages, 5069 KiB  
Communication
Sol-Gel Synthesized Amorphous (InxGa1−x)2O3 for UV Photodetection with High Responsivity
by Yupeng Zhang, Ruiheng Zhou, Xinyan Liu, Zhengyu Bi, Shengping Ruan, Yan Ma, Xin Li, Caixia Liu, Yu Chen and Jingran Zhou
Sensors 2024, 24(3), 787; https://doi.org/10.3390/s24030787 - 25 Jan 2024
Cited by 1 | Viewed by 681
Abstract
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3 (x = [...] Read more.
β-Ga2O3 photodetectors have the advantages of low dark current and strong radiation resistance in UV detection. However, the limited photocurrent has restricted their applications. Herein, MSM UV photodetectors based on (InxGa1−x)2O3 (x = 0, 0.1, 0.2, 0.3) by a sol-gel method were fabricated and studied. The doping of indium ions in Ga2O3 leads to lattice distortion and promotes the formation of oxygen vacancies. The oxygen vacancies in (InxGa1−x)2O3 can be modulated by various proportions of indium, and the increased oxygen vacancies contribute to the enhancement of electron concentration. The results show that the amorphous In0.4Ga1.6O3 photodetector exhibited improved performances, including a high light-to-dark current ratio (2.8 × 103) and high responsivity (739.2 A/W). This work provides a promising semiconductor material In0.4Ga1.6O3 for high-performance MSM UV photodetectors. Full article
(This article belongs to the Special Issue Photoelectric Device and Sensing Technologies)
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