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Advanced Packaging for MEMS and Sensors

A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Physical Sensors".

Deadline for manuscript submissions: closed (15 April 2023) | Viewed by 4927

Special Issue Editor


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Guest Editor
Department of Microelectronics and Integrated Circuits, Xiamen University, Xiamen 361005, China
Interests: advanced packaging for MEMS and sensors; microsystem integration; 3D IC

Special Issue Information

Dear Colleagues,

The emergence of advanced packaging such as three-dimensional (3D) integration and wafer level packaging (WLP) has paved the way for the manufacturing of cost-effective microelectromechanical systems (MEMSs) and sensors with a small size but high performance. Products incorporating such devices will be key to future advancements in 5G communication, mobile, Internet of Things (IoT), and automotive sectors. Despite decades of technical development, advanced packaging faces considerable challenges in the heterogeneous integration of MEMS/sensors with logic and memory chiplets for future microsystems.

The aim of this Special Issue is to bring together original research and review articles concerning issues arising in advanced packaging for MEMS and sensors. The Virtual Special Issue will serve as a point of reference for the 3D wafer level chip scale packaging (3D WLCSP), fan-out wafer level packaging (FO-WLP), 2.5D/3D integration using through-silicon via (TSV), or through-glass via (TGV), system in package (SiP) for RF devices, accelerometers, biosensors, microfluidic, imaging sensors, etc.

Prof. Dr. Daquan Yu
Guest Editor

Manuscript Submission Information

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Keywords

  • advanced packaging
  • MEMS/sensors
  • heterogeneous integration
  • wafer level packaging
  • 2.5D/3D integration
  • through-silicon via
  • fan-out
  • through-glass via

Published Papers (1 paper)

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Research

15 pages, 7069 KiB  
Article
Development of 3D Wafer Level Hermetic Packaging with Through Glass Vias (TGVs) and Transient Liquid Phase Bonding Technology for RF Filter
by Zuohuan Chen, Daquan Yu and Yi Zhong
Sensors 2022, 22(6), 2114; https://doi.org/10.3390/s22062114 - 9 Mar 2022
Cited by 8 | Viewed by 4074
Abstract
The development of 5G mobile communication created the need for high-frequency communication systems, which require vast quantities of radio frequency (RF) filters with a high-quality factor (Q) and low inband losses. In this study, the packaging of an RF filter with a through-glass [...] Read more.
The development of 5G mobile communication created the need for high-frequency communication systems, which require vast quantities of radio frequency (RF) filters with a high-quality factor (Q) and low inband losses. In this study, the packaging of an RF filter with a through-glass via (TGV) interposer was designed and fabricated using a three-dimensional wafer-level package (3D WLP). TGV fabrication is a high-yielding process, which can produce high precision vias without masking and lithography and reduce the manufacturing cost compared with the through silicon via (TSV) solution. The glass interposer capping wafer contains Cu-filled TGV, a metal redistribution layer (RDL), and the bonding layer. The RF filter substrate with Au bump is bonded to the capping wafer based on Au-Sn transient liquid phase (TLP) bonding at 280 °C with a 40 kN (approximately 6.5 MPa) bonding force. Experimental results show that shear strengths of approx. 54.5 MPa can be obtained, higher than the standard requirement (~6 MPa). In addition, a comparison of the electrical performance of the RF filter package after the pre-conditional level three (Pre-Con L3) and unbiased highly accelerated stress (uHAST) tests showed no difference in insertion attenuation across the passband (<0.2 dB, standard value: <1 dB). The final packages passed the reliability tests in the field of consumer electronics. The proposed RF filter WLP achieves high performance, low cost, and superior reliability. Full article
(This article belongs to the Special Issue Advanced Packaging for MEMS and Sensors)
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