Magnetoelectric Thin-Film Based Devices

Dear Colleagues,

Magnetoelectric (ME) materials and their thin-film heterostructures, in which two or more ferroic orders exist simultaneously, have attracted ever-increasing research interests. The strong cross-coupling between magnetic and electric orders in ME materials provides alternative routes towards new functional devices with high scalability, speed and low-power consumption—hence making ME-based devices a promising candidate for the beyond-CMOS technology.

This Special Issue aims to highlight the recent advances in new device concepts and architecture, material innovations, and system integrations in ME thin-film-based devices for logic, memory, sensoric, communication, and energy harvesting applications. Specific focus for this issue includes, but is not limited to: voltage-control spintronics for logic and memory devices, ME-based MEMS magnetic field sensors, miniaturized ME antennas, ME energy harvester, and voltage tunable microwave devices. In addition, recent advances in thick-film/bulk ME laminates will also be addressed in this issue.

Dr. Tianxiang Nan
Dr. Zhongqiang Hu
Dr. Zhaoqiang Chu
Guest Editors

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