CMOS Active Pixel Sensors
A special issue of Sensors (ISSN 1424-8220). This special issue belongs to the section "Optical Sensors".
Deadline for manuscript submissions: closed (10 September 2020) | Viewed by 313
Special Issue Editor
Special Issue Information
Dear Colleagues,
This Special Issue will focus on recent CMOS active pixel sensors (APSs) development and innovation across a wide range of application areas. The prime drivers for increasing usage of CMOS APSs is in consumer products, the rising demand for automobile driver assistance and, with higher resolution and lower-light picture capture, fuelling the demand for CMOS APS in security and surveillance systems. The scientific and healthcare domains continue to exploit and push the technology for applications ranging from fully depleted APS for vertex detectors in high-energy physics to wafer-scale devices to replace amorphous Si panels in radiology. Several foundries offer an increasing range of processes with a willingness to collaborate with the scientific community. Wafer thinning, back-illumination, columnar ADCs, and bump-bonding have translated from research topics to standard industrial processes. The noise floor of APSs is now on par with CCDs. While the commercial world is often driven by smaller and smaller pixels—the smartphone pixel wars—in some scientific and health-related applications the requirement is for large pixels, which can be equally challenging to optimise. The spectral sensing range extends far beyond the visible, and the last two decades have witnessed enormous progress in charged-particle detection. With this comes the need for increased radiation hardness and often speed. The boundary between the traditional divisions of counting detectors and integrating ones has become blurred. Plasmonic and other novel sensing methods will blur this boundary further.
This Special Issue welcomes the submission of manuscripts across the design, architecture, and application of CMOS APSs that exemplify the current and future status of the field. We would particularly appreciate contributions that chart the course from device design and fabrication through to application.
Topics of interest include, but are not limited to, the following:
- new devices and pixel structures;
- very small and very large pixels development, testing, and characterisation;
- 3D structures and hybrid sensors;
- plasmonic and other novel sensing methods;
- high frame rate image sensors;
- high dynamic range sensors;
- global shuttering and readout selection techniques;
- non-visible applications including electron multiplication;
- low noise readout circuitry, ADC designs, single photon/particle sensitivity;
- radiation damage and radiation hard imagers;
- applications across the commercial, scientific, and healthcare sectors
Prof. Nigel M. Allinson
Guest Editor
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