Metal–Semiconductor Interfaces for Etching, Sensing, Catalysis, and Other Cutting-Edge Technologies
A special issue of Physchem (ISSN 2673-7167). This special issue belongs to the section "Surface Science".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 173
Special Issue Editor
Interests: semiconductor microstructuring by etching; low-dimensional structures; high-capacity Li-ion batteries; impedance spectroscopy; operando characterization of devices
Special Issue Information
Dear Colleagues,
Metal–semiconductor interfaces are crucial for different very relevant applications like etching, sensing, and catalysis due to their ability to control electron and hole transfer, which is essential for them. Being able to tune the characteristics of the interfaces, like the potential and band bending, makes them highly versatile for the development of the cited applications, and other cutting-edge technologies. In the case of metal-assisted chemical etching (MACE), the metal acts as a catalyst to generate electronic holes, and also forms a junction with the semiconductor to be etched, injecting the holes into it, producing etching. The nature of the metal–semiconductor interface greatly influences the size, shape, and porosity of etched structures. Metal–semiconductor interfaces are also the most important part of different optical and electrical sensors, while they enhance the sensing capabilities of chemical, electrochemical, and plasmonic sensors. In photocatalysis, metal–semiconductor interfaces are important for charge separation and transfer, being needed for driving chemical reactions. The scope (although this is not restrictive) of the Special Issue includes the following: metal-assisted chemical etching; stain etching; Schottky junction devices; chemical and electrochemical sensors; SERS; composite catalysts; other metal–semiconductor-based devices and applications.
Prof. Dr. Enrique Quiroga-González
Guest Editor
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Keywords
- metal–semiconductor junction
- interfaces
- etching
- sensing
- catalysis
- MACE
- Schottky contact
- SERS
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