Single-Photon Emitters in Wide-Bandgap Semiconductors
A special issue of Photonics (ISSN 2304-6732). This special issue belongs to the section "Quantum Photonics and Technologies".
Deadline for manuscript submissions: 30 June 2026 | Viewed by 53
Special Issue Editors
Interests: single-photon emitters; quantum dots; color centers; MOCVD; GaN
Special Issue Information
Dear Colleagues,
We are pleased to invite you to submit a manuscript for a Special Issue on "Single-Photon Emitters in Wide-Bandgap Semiconductors".
Single-photon emitters (SPEs) are essential for quantum information technologies, enabling secure satellite communications, precision quantum imaging, and high-speed quantum computing. Among the wide variety of solid-state systems explored to date, III-nitride-based quantum dots (QDs) and color centers have emerged as particularly promising candidates for practical, room-temperature operation. Their wide bandgap, strong excitonic binding energy, and exceptional robustness in harsh environments allow stable photon emission across the visible spectrum. Although GaN materials benefit from a mature epitaxial growth platform and well-established quantum light source fabrication techniques, GaN QDs and color centers still face several challenges. These include a low density of QD growth, the unclear origin of defect-based SPEs, and the lack of precise position control required to fully exploit their potential. Achieving high photon purity, particularly in electrically driven SPEs, remains an urgent priority.
This Special Issue on “Single-Photon Emitters in Wide-Bandgap Semiconductors" will welcome basic, methodological, and applied cutting-edge research contributions, as regular and review papers, dealing with the following:
- Materials and Fabrication: Development of advanced growth techniques for III-nitride QDs and color centers;
- Fundamental Physics: Elucidation of the origin and nature of defect-based SPEs in III-nitride materials and the physics studies of QDs;
- Device Engineering: Fabrication methods for the realization of optically pumped or electrically driven SPEs;
- Characterization: Implementation of advanced spectroscopic and optical methods to probe SPE properties under both room-temperature and cryogenic conditions;
- Applications: Integration of III-nitride SPEs into quantum devices for computing, communication, and sensing applications.
Dr. Chunyu Zhao
Dr. Xiaoxiao Sun
Guest Editors
Manuscript Submission Information
Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.
Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Photonics is an international peer-reviewed open access monthly journal published by MDPI.
Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.
Keywords
- single-photon emitters
- single-photon sources
- quantum dots
- color centers
- point defects
- quantum technologies
- quantum information technology
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