State-of-the-Art Optoelectronic and Electronic Nanodevices in China

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanoelectronics, Nanosensors and Devices".

Deadline for manuscript submissions: closed (31 October 2021) | Viewed by 2845

Special Issue Editor


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Guest Editor
College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, China
Interests: novel optoelectronic and electronic devices

Special Issue Information

Dear Colleagues,

This is a Special Issue of the open access journal Nanomaterials (ISSN 2079-4991). This issue focuses on 2D/3D optoelectronic and electronic devices. The remarkable properties of graphene have renewed interest in two-dimensional materials with unique electronic and optical attributes. Any passivated, dangling-bond-free surface interacts with another by van der Waals forces. Additionally, any layered 2D material can be integrated with different dimensionality to form mixed-dimensional van der Waals heterostructures. Combining optical elements of large-bandgap 3D semiconductors such as n/p-doped Si, GaN, AlGaN, GaN, etc. with 2D materials would present an effective approach to designing transistors, photodetectors, electroluminescent devices, solar cells, thermo-photonic devices, etc. Meanwhile, we also encourage researchers to provide insights into various intriguing electronic properties such as band structure, carrier mobility, layer-coupling phenomena, topological states, valleytronics, and so on. We kindly invite you to submit high-quality critical reviews and/or original research articles to this Special Issue.

Prof. Dr. Shisheng Lin
Guest Editor

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Keywords

  • 2D material
  • van der Waals
  • heterojunction
  • charge transfer
  • optoelectronic
  • electronic devices

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Published Papers (1 paper)

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Research

10 pages, 6287 KiB  
Article
Van der Waals Integrated Silicon/Graphene/AlGaN Based Vertical Heterostructured Hot Electron Light Emitting Diodes
by Nallappagari Krishnamurthy Manjunath, Chang Liu, Yanghua Lu, Xutao Yu and Shisheng Lin
Nanomaterials 2020, 10(12), 2568; https://doi.org/10.3390/nano10122568 - 21 Dec 2020
Cited by 1 | Viewed by 2423
Abstract
Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illumination mechanism for the silicon-based LEDs. We designed [...] Read more.
Silicon-based light emitting diodes (LED) are indispensable elements for the rapidly growing field of silicon compatible photonic integration platforms. In the present study, graphene has been utilized as an interfacial layer to realize a unique illumination mechanism for the silicon-based LEDs. We designed a Si/thick dielectric layer/graphene/AlGaN heterostructured LED via the van der Waals integration method. In forward bias, the Si/thick dielectric (HfO2-50 nm or SiO2-90 nm) heterostructure accumulates numerous hot electrons at the interface. At sufficient operational voltages, the hot electrons from the interface of the Si/dielectric can cross the thick dielectric barrier via the electron-impact ionization mechanism, which results in the emission of more electrons that can be injected into graphene. The injected hot electrons in graphene can ignite the multiplication exciton effect, and the created electrons can transfer into p-type AlGaN and recombine with holes resulting a broadband yellow-color electroluminescence (EL) with a center peak at 580 nm. In comparison, the n-Si/thick dielectric/p-AlGaN LED without graphene result in a negligible blue color EL at 430 nm in forward bias. This work demonstrates the key role of graphene as a hot electron active layer that enables the intense EL from silicon-based compound semiconductor LEDs. Such a simple LED structure may find applications in silicon compatible electronics and optoelectronics. Full article
(This article belongs to the Special Issue State-of-the-Art Optoelectronic and Electronic Nanodevices in China)
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