Functional Nanostructured Semiconductors: Design, Synthesis, Optoelectronic and Electronic Device Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 20 March 2026 | Viewed by 1063

Special Issue Editors


E-Mail Website
Guest Editor
School of Science, Inner Mongolia University of Technology, Hohhot 010051, China
Interests: semiconductor nanodots; sensors; photodetectors; LEDs; doping; heterostructures

E-Mail Website
Guest Editor
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China
Interests: wide-bandgap oxide semiconductor; chemical sensors; photodetectors

Special Issue Information

Dear Colleagues,

Functional nanostructured semiconductors have become a cornerstone in the development of next-generation electronic devices. Their unique properties, arising from nanoscale dimensions and quantum effects, offer unprecedented opportunities for innovation in electronics, optoelectronics, and photonics. The ability to design and synthesize these materials with precise control over their structural and optical properties enables the creation of devices with enhanced performance and new functionalities.

This Special Issue aims to showcase the latest research advances in the field of functional nanostructured semiconductors, focusing on their design, synthesis, optical properties, and applications in electronic devices. We invite authors to contribute original research articles, comprehensive reviews, and insightful communications that highlight cutting-edge developments and novel applications.

Potential topics include, but are not limited to, the following:

  • Design and Synthesis:
    • Innovative methods for synthesizing semiconductor nanostructures (e.g., quantum dots, nanowires, nanosheets).
    • Tuning structural properties through doping, alloying, and heterostructures.
    • Self-assembly techniques and template-directed growth.
    • Innovative methods for synthesizing semiconductor nanostructures (e.g., quantum dots, nanowires, nanosheets).
    • Tuning structural properties through doping, alloying, and heterostructures.
    • Self-assembly techniques and template-directed growth.
  • Optoelectronic and Electronic Device Applications:
    • The integration of nanostructured semiconductors in transistors, diodes, and other electronic devices.
    • The development of high-performance photodetectors, LEDs, and lasers.
    • Energy conversion devices such as solar cells piezoelectrics and thermoelectrics.
    • Chemical sensors and biosensors leveraging enhanced optical and electronic properties.
    • The integration of nanostructured semiconductors in flexible and wearable electronics.
  • Characterization and Modeling:
    • Advanced techniques for structural, optical, and electronic characterization.
    • The theoretical modeling and simulation of nanostructured semiconductor behavior.
    • Studies on charge transport, recombination mechanisms, and device physics.

Dr. Hai Zhang
Prof. Dr. Jun Zhu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • nanostructured semiconductors
  • electronic devices
  • optical properties
  • nanofabrication
  • quantum confined structures
  • optoelectronics
  • photonics
  • energy harvesting
  • sensing technologies
  • device integration

Benefits of Publishing in a Special Issue

  • Ease of navigation: Grouping papers by topic helps scholars navigate broad scope journals more efficiently.
  • Greater discoverability: Special Issues support the reach and impact of scientific research. Articles in Special Issues are more discoverable and cited more frequently.
  • Expansion of research network: Special Issues facilitate connections among authors, fostering scientific collaborations.
  • External promotion: Articles in Special Issues are often promoted through the journal's social media, increasing their visibility.
  • Reprint: MDPI Books provides the opportunity to republish successful Special Issues in book format, both online and in print.

Further information on MDPI's Special Issue policies can be found here.

Published Papers (1 paper)

Order results
Result details
Select all
Export citation of selected articles as:

Research

17 pages, 3956 KB  
Article
Synergistic LPCVD and PECVD Growth of β-Ga2O3 Thin Films for High-Sensitivity and Low-Dose Direct X-Ray Detection
by Lan Yang, Dingyuan Niu, Yong Zhang, Xueping Zhao, Xinxin Li, Jun Zhu and Hai Zhang
Nanomaterials 2025, 15(17), 1360; https://doi.org/10.3390/nano15171360 - 3 Sep 2025
Viewed by 744
Abstract
Ultra-wide bandgap β-Ga2O3 is a promising low-cost alternative to conventional direct X-ray detector materials that are limited by fabrication complexity, instability, or slow temporal response. Here, we comparatively investigate β-Ga2O3 thin films grown on c-sapphire by low-pressure [...] Read more.
Ultra-wide bandgap β-Ga2O3 is a promising low-cost alternative to conventional direct X-ray detector materials that are limited by fabrication complexity, instability, or slow temporal response. Here, we comparatively investigate β-Ga2O3 thin films grown on c-sapphire by low-pressure chemical vapor deposition (LPCVD) and plasma-enhanced CVD (PECVD), establishing a quantitative linkage between growth kinetics, microstructure, defect landscape, and X-ray detection figures of merit. The LPCVD-grown film (thickness ≈ 0.289 μm) exhibits layered coalesced grains, a narrower rocking curve (FWHM = 1.840°), and deep-level oxygen-vacancy-assisted high photoconductive gain, yielding a high sensitivity of 1.02 × 105 μC Gyair−1 cm−2 at 20 V and a thickness-normalized sensitivity of 3.539 × 105 μCGyair−1 cm−2 μm−1. In contrast, the PECVD-grown film (≈1.57 μm) shows dense columnar growth, higher O/Ga stoichiometric proximity, and shallow-trap dominance, enabling a lower dark current, superior dose detection limit (30.13 vs. 57.07 nGyair s−1), faster recovery, and monotonic SNR improvement with bias. XPS and dual exponential transient analysis corroborate a deep-trap persistent photoconductivity mechanism in LPCVD versus moderated shallow trapping in PECVD. The resulting high-gain vs. low-noise complementary paradigm clarifies defect–gain trade spaces and provides a route to engineer β-Ga2O3 thin-film X-ray detectors that simultaneously target high sensitivity, low dose limit, and temporal stability through trap and electric field management. Full article
Show Figures

Figure 1

Back to TopTop