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Nanomaterials
Special Issues
State-of-the-Art Nanostructured Photodetectors
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State-of-the-Art Nanostructured Photodetectors

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Nanophotonics Materials and Devices".

Deadline for manuscript submissions: 25 November 2025 | Viewed by 565

Special Issue Editors

Dr. Qijin Cheng

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Xiamen University, Xiamen 361005, China
Interests: wide-gap semiconductors; two-dimensional materials; photodetectors; transistors; solar cells; Li-ion batteries
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Fabi Zhang

E-Mail Website
Guest Editor
School of Information and Communication, Guilin University of Electronic Technology, Guilin 541004, China
Interests: wide-gap semiconductors; two-dimensional materials; photodetectors; transistors

Special Issue Information

Dear Colleagues,

Recent advances in nanostructured photodetectors have opened up new avenues for high-performance optoelectronic devices. Photodetectors play a crucial role in imaging, sensing, and communication systems, and the integration of nanostructures has significantly enhanced their responsivity, speed, and spectral selectivity. Nanostructured materials, such as quantum dots, nanoparticles, nanowires, and two-dimensional materials, enable improved light absorption, carrier transport, and photoconductive gain through quantum confinement and surface engineering. Additionally, plasmonic nanostructures and metamaterials have been employed to enhance light–matter interactions, extending detection ranges to ultraviolet, visible, and infrared wavelengths.

This Special Issue of Nanomaterials aims to highlight cutting-edge research on nanostructured photodetectors, bridging fundamental discoveries to technological innovations. We invite contributions addressing novel material designs, device engineering strategies, and mechanistic studies, as well as reviews that critically assess progress in the field. Topics of interest include, but are not limited to, the following:

  • Ultra-sensitive photodetectors based on quantum-confined nanostructures.
  • Wide-bandgap and narrow-bandgap nanostructured photodetectors for UV/IR sensing.
  • Self-powered and energy-efficient nanostructured photodetector designs.
  • Two-dimensional material-based photodetectors (e.g., graphene, transition metal dichalcogenides).
  • Plasmonic and metamaterial-enhanced photodetection.
  • Hybrid organic–inorganic nanostructured photodetectors.
  • Scalable fabrication techniques for industrial adoption.

Dr. Qijin Cheng
Prof. Dr. Fabi Zhang
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Nanomaterials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • photodetectors
  • nanostructures
  • two-dimensional materials
  • quantum confinement
  • plasmons
  • metamaterials

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Published Papers (1 paper)

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Research

14 pages, 3436 KB  
Article
O2-to-Ar Ratio-Controlled Growth of Ga2O3 Thin Films by Plasma-Enhanced Thermal Oxidation for Solar-Blind Photodetectors
by Rujun Jiang, Bohan Xiao, Yuna Lu, Zheng Liang and Qijin Cheng
Nanomaterials 2025, 15(18), 1397; https://doi.org/10.3390/nano15181397 - 11 Sep 2025
Viewed by 325
Abstract
Ga2O3 is an ultra-wide bandgap semiconductor material that has attracted significant attention for deep ultraviolet photodetector applications due to its excellent UV absorption capability and reliable stability. In this study, a novel plasma-enhanced thermal oxidation (PETO) method has been proposed [...] Read more.
Ga2O3 is an ultra-wide bandgap semiconductor material that has attracted significant attention for deep ultraviolet photodetector applications due to its excellent UV absorption capability and reliable stability. In this study, a novel plasma-enhanced thermal oxidation (PETO) method has been proposed to fabricate Ga2O3 thin films on the GaN/sapphire substrate in the gas mixture of Ar and O2. By adjusting the O2-to-Ar ratio (2:1, 4:1, and 8:1), the structural, morphological, and photoelectric properties of the synthesized Ga2O3 films are systematically studied as a function of the oxidizing atmosphere. It is demonstrated that, at an optimal O2-to-Ar ratio of 4:1, the synthesized Ga2O3 thin film has the largest grain size of 31.4 nm, the fastest growth rate of 427.5 nm/h, as well as the lowest oxygen vacancy concentration of 16.61%. Furthermore, the nucleation and growth of Ga2O3 thin films on the GaN/sapphire substrate by PETO is proposed. Finally, at the optimized O2-to-Ar ratio of 4:1, the metal–semiconductor–metal-structured Ga2O3-based photodetector achieves a specific detectivity of 2.74×1013 Jones and a solar-blind/visible rejection ratio as high as 116 under a 10 V bias. This work provides a promising approach for the cost-effective fabrication of Ga2O3 thin films for UV photodetector applications. Full article
(This article belongs to the Special Issue State-of-the-Art Nanostructured Photodetectors)
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