Perovskite Nanostructures: Synthesis, Properties and Applications

A special issue of Nanomaterials (ISSN 2079-4991). This special issue belongs to the section "Solar Energy and Solar Cells".

Deadline for manuscript submissions: closed (20 September 2024) | Viewed by 6493

Special Issue Editors


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Guest Editor
1. State Key Laboratory of Alternate Electrical Power System, North China Electric Power University, Beijing, China
2. Beijing Laboratory of Energy and Clean Utilization, North China Electric Power University, Beijing, China
Interests: semiconductor nanostructures and thin films; solar cells; optoelectronics

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Guest Editor
Beijing Key Laboratory of Energy Safety and Clean Utilization, School of Renewable Energy, North China Electric Power University, Beijing, China
Interests: semiconductor nanostructures and thin films; low-dimensional physics; solar cells; photodetectors; memristor

Special Issue Information

Dear Colleagues,

Perovskite nanostructures have gained significant attention in recent years due to their exceptional properties and promising applications in various fields. The enhanced light absorption, tunable bandgaps, high charge carrier mobility, and exceptional catalytic activity exhibited by perovskite nanostructures are results of their quantum confinement effects and surface/interface phenomena. They are affected strongly by synthesis approaches, so characterizing these properties and understanding their synthesis mechanisms, structure–property relationships, and manipulation techniques are vital for harnessing their full potential and advancing various technological domains, including solar cells, light-emitting diodes, photodetectors, sensors, field-effect transistors, catalysis, and energy storage devices.

The Special Issue focuses on the latest developments in and practical applications of perovskite nanostructures. It aims to attract both academic and industrial researchers in order to enhance the current knowledge on perovskite nanostructures and present new ideas for a wide range of future applications and technologies.

Prof. Dr. Jianxi Yao
Dr. Jia Xu
Guest Editors

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Keywords

  • perovskite nanostructures
  • perovskite thin film
  • synthesis
  • optoelectronics
  • solar cells
  • sensors
  • light-emitting diodes
  • energy storage
  • photodetectors
  • catalysis

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Published Papers (3 papers)

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Research

10 pages, 1806 KiB  
Article
Design and Simulation for Minimizing Non-Radiative Recombination Losses in CsGeI2Br Perovskite Solar Cells
by Tingxue Zhou, Xin Huang, Diao Zhang, Wei Liu and Xing’ao Li
Nanomaterials 2024, 14(20), 1650; https://doi.org/10.3390/nano14201650 - 14 Oct 2024
Viewed by 1559
Abstract
CsGeI2Br-based perovskites, with their favorable band gap and high absorption coefficient, are promising candidates for the development of efficient lead-free perovskite solar cells (PSCs). However, bulk and interfacial carrier non-radiative recombination losses hinder the further improvement of power conversion efficiency and [...] Read more.
CsGeI2Br-based perovskites, with their favorable band gap and high absorption coefficient, are promising candidates for the development of efficient lead-free perovskite solar cells (PSCs). However, bulk and interfacial carrier non-radiative recombination losses hinder the further improvement of power conversion efficiency and stability in PSCs. To overcome this challenge, the photovoltaic potential of the device is unlocked by optimizing the optical and electronic parameters through rigorous numerical simulation, which include tuning perovskite thickness, bulk defect density, and series and shunt resistance. Additionally, to make the simulation data as realistic as possible, recombination processes, such as Auger recombination, must be considered. In this simulation, when the Auger capture coefficient is increased to 10−29 cm6 s−1, the efficiency drops from 31.62% (without taking Auger recombination into account) to 29.10%. Since Auger recombination is unavoidable in experiments, carrier losses due to Auger recombination should be included in the analysis of the efficiency limit to avoid significantly overestimating the simulated device performance. Therefore, this paper provides valuable insights for designing realistic and efficient lead-free PSCs. Full article
(This article belongs to the Special Issue Perovskite Nanostructures: Synthesis, Properties and Applications)
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22 pages, 6490 KiB  
Article
Enhancing the Photocatalytic Activity of Halide Perovskite Cesium Bismuth Bromide/Hydrogen Titanate Heterostructures for Benzyl Alcohol Oxidation
by Huzaikha Awang, Abdo Hezam, Tim Peppel and Jennifer Strunk
Nanomaterials 2024, 14(9), 752; https://doi.org/10.3390/nano14090752 - 25 Apr 2024
Cited by 4 | Viewed by 1875
Abstract
Halide perovskite Cs3Bi2Br9 (CBB) has excellent potential in photocatalysis due to its promising light-harvesting properties. However, its photocatalytic performance might be limited due to the unfavorable charge carrier migration and water-induced properties, which limit the stability and photocatalytic [...] Read more.
Halide perovskite Cs3Bi2Br9 (CBB) has excellent potential in photocatalysis due to its promising light-harvesting properties. However, its photocatalytic performance might be limited due to the unfavorable charge carrier migration and water-induced properties, which limit the stability and photocatalytic performance. Therefore, we address this constraint in this work by synthesizing a stable halide perovskite heterojunction by introducing hydrogen titanate nanosheets (H2Ti3O7-NS, HTiO-NS). Optimizing the weight % (wt%) of CBB enables synthesizing the optimal CBB/HTiO-NS, CBHTNS heterostructure. The detailed morphology and structure characterization proved that the cubic shape of CBB is anchored on the HTiO-NS surface. The 30 wt% CBB/HTiO-NS-30 (CBHTNS-30) heterojunction showed the highest BnOH photooxidation performance with 98% conversion and 75% benzoic acid (BzA) selectivity at 2 h under blue light irradiation. Detailed optical and photoelectrochemical characterization showed that the incorporating CBB and HTiO-NS widened the range of the visible-light response and improved the ability to separate the photo-induced charge carriers. The presence of HTiO-NS has increased the oxidative properties, possibly by charge separation in the heterojunction, which facilitated the generation of superoxide and hydroxyl radicals. A possible reaction pathway for the photocatalytic oxidation of BnOH to BzH and BzA was also suggested. Furthermore, through scavenger experiments, we found that the photogenerated h+, e and •O2 play an essential role in the BnOH photooxidation, while the •OH have a minor effect on the reaction. This work may provide a strategy for using HTiO-NS-based photocatalyst to enhance the charge carrier migration and photocatalytic performance of CBB. Full article
(This article belongs to the Special Issue Perovskite Nanostructures: Synthesis, Properties and Applications)
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14 pages, 5866 KiB  
Article
Fabrication and Characterization of a Lead-Free Cesium Bismuth Iodide Perovskite through Antisolvent-Assisted Crystallization
by Salma Maneno Masawa, Chenxu Zhao, Jing Liu, Jia Xu and Jianxi Yao
Nanomaterials 2024, 14(7), 626; https://doi.org/10.3390/nano14070626 - 2 Apr 2024
Cited by 5 | Viewed by 2357
Abstract
Cesium bismuth iodide perovskite material offers good stability toward ambient conditions and has potential optoelectronic characteristics. However, wide bandgap, absorber surface roughness, and poor surface coverage with pinholes are among the key impediments to its adoption as a photovoltaic absorber material. Herein, bandgap [...] Read more.
Cesium bismuth iodide perovskite material offers good stability toward ambient conditions and has potential optoelectronic characteristics. However, wide bandgap, absorber surface roughness, and poor surface coverage with pinholes are among the key impediments to its adoption as a photovoltaic absorber material. Herein, bandgap modification and the tailoring of surface morphology have been performed through molar ratio variation and antisolvent treatment, whereby type III antisolvent (toluene) based on Hansen space has been utilized. XRD and Raman spectroscopy analyses confirm the formation of a 0D/2D mixed dimensional structure with improved optoelectronic properties when the molar ratio of CsI/BiI3 was adjusted from 1.5:1 to 1:1.5. The absorption results and Tauc plot determination show that the fabricated film has a lower bandgap of 1.80 eV. TRPL analysis reveals that the film possesses a very low charge carrier lifetime of 0.94 ns, suggesting deep defects. Toluene improves the charge carrier lifetime to 1.89 ns. The average grain size also increases from 323.26 nm to 444.3 nm upon toluene addition. Additionally, the inclusion of toluene results in a modest improvement in PCE, from 0.23% to 0.33%. Full article
(This article belongs to the Special Issue Perovskite Nanostructures: Synthesis, Properties and Applications)
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