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Electronic Materials
Special Issues
Emerging Trends in Electronic Materials and Functional Nanostructures
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Emerging Trends in Electronic Materials and Functional Nanostructures

A Special Issue of Electronic Materials (ISSN 2673-3978).

Deadline for manuscript submissions: 31 December 2026 | Viewed by 3005

Editor

Dr. Zongjie Shen

E-Mail Website
Guest Editor
School of CHIPS, Xi'an Jiaotong-Liverpool University, Suzhou 215123, China
Interests: neuromorphic electronics; metal oxides; low-dimensional materials

Special Issue Information

Dear Colleagues,

This Special Issue is organized in cooperation with AICMSN2026—the 2nd Annual International Conference on Materials Science and Nanoscience, which will be held in Lisbon, Portugal, during April 13-15, 2026. Submissions from conference participants are welcomed, along with contributions from the broader scientific community.

This Special Issue focuses on sustainable advancements in materials science and functional nanotechnology for electronic applications. It highlights innovative research on the design, synthesis, and application of materials and nanomaterials that support clean energy, environmental protection, resource efficiency, and green engineering. Topics include sustainable nanomaterials, eco-friendly fabrication methods, electronic materials for energy conversion and storage, nanotechnology for environmental remediation, biodegradable and recyclable materials, and computational approaches for sustainable materials design.

Dr. Zongjie Shen
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-anonymized peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronic Materials is an international peer-reviewed open access quarterly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1200 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • sustainable materials
  • nanotechnology
  • nanomaterials
  • green fabrication
  • renewable energy materials
  • energy storage and conversion
  • environmental remediation
  • biodegradable materials
  • recyclable materials
  • computational materials science
  • functional materials
  • eco-friendly materials
  • materials for sustainability

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Further information on MDPI's Special Issue policies can be found here.

Published Papers (3 papers)

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Research

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19 pages, 10006 KB  
Article
A Fast-Response LDO Based on High-Temperature 0.18 μm SOI Technology
by Caiping Zheng, Muhammad Yasir Faheem, Qiaoying Gan, Sixian Li, Chengying Chen and Yufei Huang
Electron. Mater. 2026, 7(3), 16; https://doi.org/10.3390/electronicmat7030016 - 1 Jul 2026
Viewed by 431
Abstract
To meet the requirements of wide-temperature reliability and fast transient response in power management ICs for automotive, aerospace, and industrial applications, this paper presents a fast-response low-dropout regulator (LDO) based on a 0.18 μm high-temperature SOI process. Benefiting from the buried oxide isolation [...] Read more.
To meet the requirements of wide-temperature reliability and fast transient response in power management ICs for automotive, aerospace, and industrial applications, this paper presents a fast-response low-dropout regulator (LDO) based on a 0.18 μm high-temperature SOI process. Benefiting from the buried oxide isolation structure of the SOI technology, leakage current and parasitic effects under high-temperature conditions are effectively suppressed. The proposed LDO employs an NMOS power transistor, with an on-chip charge pump used to enhance the gate driving capability. In addition, a triple-loop regulation scheme consisting of a main negative feedback loop, an auxiliary positive feedback loop, and a current-mode feedback loop is adopted to improve transient performance and enhance loop stability. The fabricated chip occupies an area of 2840 μm × 1490 μm and supports an input voltage range of 3–5.5 V and an output voltage range of 1.2–3.3 V. Over a temperature range of −55 °C to 175 °C, the LDO can deliver a maximum load current of 400 mA. At 175 °C, the measured overshoot and undershoot voltages are 64 mV and 94 mV, respectively, with a maximum recovery time of 336 μs. Moreover, the power supply rejection ratio (PSRR) reaches 56.8 dB at 100 Hz. Experimental results demonstrate that the proposed LDO exhibits excellent high-temperature adaptability, strong load-driving capability, and superior transient response performance. Full article
(This article belongs to the Special Issue Emerging Trends in Electronic Materials and Functional Nanostructures)
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16 pages, 1406 KB  
Article
Monolayer and Bilayer MoS2 Under Proton Irradiation: Electronic Stopping and Charge Capture Revealed by Real-Time TDDFT
by Ligang Wang, Guanxiang Yang, Lihongye Liao and Qiang Zhao
Electron. Mater. 2026, 7(2), 14; https://doi.org/10.3390/electronicmat7020014 - 18 Jun 2026
Viewed by 680
Abstract
Monolayer and few-layer MoS2 are promising two-dimensional electronic materials, but proton irradiation can trigger ultrafast electronic excitation and charge transfer before defect formation. Here, real-time time-dependent density functional theory (RT-TDDFT) is used to investigate proton-induced electronic stopping and localized charge capture in [...] Read more.
Monolayer and few-layer MoS2 are promising two-dimensional electronic materials, but proton irradiation can trigger ultrafast electronic excitation and charge transfer before defect formation. Here, real-time time-dependent density functional theory (RT-TDDFT) is used to investigate proton-induced electronic stopping and localized charge capture in monolayer and bilayer MoS2 under normal incidence. Four impact positions are examined in monolayer MoS2, namely, the hollow channel, the Mo–S bond center, and two trajectories close to Mo and S atoms. Under hollow channel incidence, the stopping power shows a non-monotonic dependence on proton velocity. When comparing the different trajectories, the hollow channel path gives the lowest stopping power, whereas the Mo–S bond center path gives the highest values, indicating strong sensitivity to the in-plane valence charge distribution. By contrast, the time-averaged localized captured charge decreases with increasing velocity and is generally largest for the close to Mo trajectory. Under the same hollow channel condition, the monolayer stopping power exceeds the bilayer value in the main stopping region, whereas the bilayer generally shows slightly enhanced localized charge capture. These results show that electronic stopping and localized charge capture are distinct but coupled microscopic components of proton-induced electronic response in MoS2 and provide first-principles insight relevant to ion-beam processing and radiation-tolerant two-dimensional devices. Full article
(This article belongs to the Special Issue Emerging Trends in Electronic Materials and Functional Nanostructures)
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Review

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21 pages, 1821 KB  
Review
Tactile and Visual Artificial Synaptic Devices: Progress and Challenges
by Zhifeng Chen, Chengying Chen and Yufei Huang
Electron. Mater. 2026, 7(2), 8; https://doi.org/10.3390/electronicmat7020008 - 15 Apr 2026
Cited by 1 | Viewed by 1261
Abstract
The von Neumann architecture faces a “memory wall” problem due to the physical separation of memory and processor, posing major challenges to energy efficiency and latency in the era of artificial intelligence. To overcome these bottlenecks, artificial synaptic devices inspired by biological systems [...] Read more.
The von Neumann architecture faces a “memory wall” problem due to the physical separation of memory and processor, posing major challenges to energy efficiency and latency in the era of artificial intelligence. To overcome these bottlenecks, artificial synaptic devices inspired by biological systems have emerged as an important research direction. By integrating sensing and computing functions at the device level, these architectures provide a promising approach for the efficient processing of natural physical signals. Supported by advances in functional materials and artificial neural network (ANN) algorithms, artificial synaptic devices are capable of perceiving and processing various external stimuli, showing strong potential for applications in intelligent electronic skins, robotics, and edge computing. This review provides a comprehensive overview of recent advances in artificial synaptic devices, with particular emphasis on tactile and visual sensing applications. We discuss representative device types and operating mechanisms, analyze critical challenges from the perspectives of material engineering and functional integration, and further summarize potential solutions and future trends toward multimodal sensory–memory–computing systems. Full article
(This article belongs to the Special Issue Emerging Trends in Electronic Materials and Functional Nanostructures)
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