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Crystals
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Raman Scattering in Optical Crystals (Volume II)
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Raman Scattering in Optical Crystals (Volume II)

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (30 November 2023) | Viewed by 3793

Special Issue Editor

Dr. Sergei Smetanin

E-Mail Website
Guest Editor
Department of Laser Materials and Photonics, Prokhorov General Physics Institute of the Russian Academy of Sciences, Vavilov str. 38, Moscow 119991, Russia
Interests: active and nonlinear optical materials; devices for quantum electronics and photonics
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear Colleagues,

Following the remarkable success of the first volume of the Special Issue entitled “Raman Scattering in Optical Crystals” (https://www.mdpi.com/journal/crystals/special_issues/Raman_scattering_crystals), we are pleased to announce the second volume of this Special Issue.

The Raman effect, which was predicted theoretically by Adolf Smekal in 1923, was first reported in 1928 by Indian scientist C. V. Raman (the Nobel Prize in 1930) and his coworker K. S. Krishnan and independently by Soviet scientists G. S. Landsberg and L. I. Mandelstam. Exactly 60 years ago, in 1962, stimulated Raman scattering was first discovered by E. J. Woodbury and W. K. Ng, providing the basis for a new type of lasers: Raman lasers. Currently, Raman scattering is one of the most useful tools for studying the structure of crystals and, at the same time, is an efficient method for the generation and nonlinear conversion of coherent radiation in optical crystals. This Special Issue on “Raman Scattering in Optical Crystals” intends to provide a unique international forum aimed at covering a broad area of Raman scattering for studying new optical crystals, as well as the characterization and application of optical crystals as functional media for lasers and nonlinear converters. Scientists and engineers working with optical, nonlinear, and laser crystals are invited to contribute to this issue.

Dr. Sergei Smetanin
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Raman-active crystals
  • Raman spectroscopy
  • vibrational studies
  • stimulated Raman scattering in crystals
  • crystalline Raman lasers

Published Papers (4 papers)

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Research

24 pages, 6813 KiB  
Article
Influence of Ultrahigh Dilution Treatment of the Charge on the Growth and Spectroscopic Properties of Nd:MgMoO4 Potential Laser Crystal
by Kirill A. Subbotin, Yana S. Didenko, Anatolii I. Titov, Denis A. Lis, Sergei K. Pavlov, Pavel A. Volkov, Kristina I. Runina, Valerii V. Voronov, Elena V. Chernova, Olga N. Lis, Kristina V. Kuleshova and Yulia I. Zimina
Crystals 2024, 14(1), 100; https://doi.org/10.3390/cryst14010100 - 22 Jan 2024
Viewed by 855
Abstract
The influence of the charge treatment by ultrahigh dilution (UHD) technology on oxide single crystals grown by the Czochralski technique was studied for monoclinic MgMoO4 crystals doped by 1 at. % of Nd3+ ions. The series of 10 Nd:MgMoO4 crystals [...] Read more.
The influence of the charge treatment by ultrahigh dilution (UHD) technology on oxide single crystals grown by the Czochralski technique was studied for monoclinic MgMoO4 crystals doped by 1 at. % of Nd3+ ions. The series of 10 Nd:MgMoO4 crystals was grown from the charges that were subjected to UHD treatment, as well as from the charges treated with two types of control or with no special treatment at all. The grown crystals were studied by X-ray powder diffraction analysis, inductively coupled plasma atomic emission spectroscopy, mass-spectrometry, optical absorption, emission spectroscopy and luminescence kinetic analysis. We found that: (i) wetting of MgO + MoO3 mixture by a water-ethanol solution before calcining leads to some enrichment of the mixture with MoO3, whereas the wetting of the charge after the calcining leads to some enrichment of it with MgO; (ii) congruent melting composition of MgMoO4 crystal is in the field of some MoO3 excess; (iii) the solid-phase solubility of the excess MoO3 in MgMoO4 probably does not depend on temperature, whereas the solid-phase solubility of the excess MgO in MgMoO4 crystal depends on temperature. We suggest that the corresponding solidus line passes through the range of retrograde solubility; (iv) the crystals grown within this range are characterized by the enhanced Nd3+ segregation coefficient between the crystal and the melt (approximately 0.006 versus 0.004); (v) unit cell parameters of MgMoO4 crystal with the excess of MoO3 are larger than those of the crystal of the stoichiometric composition and of the crystal with the excess of MgO; (vi) the shapes of the optical absorption and luminescence spectra of Nd:MgMoO4 crystal do not depend on the charge treatment; (vii) luminescence decay kinetics are single-exponential for all the studied crystals, the luminescence decay time being different for the crystals grown from the charges that underwent different types of treatment; (viii) the luminescence intensity of Nd:MgMoO4 crystal grown from the charge that underwent UHD treatment before calcining (solid-phase synthesis) is reduced by an order of magnitude in comparison with the other studied crystals. Full article
(This article belongs to the Special Issue Raman Scattering in Optical Crystals (Volume II))
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11 pages, 984 KiB  
Article
Raman Spectroscopic Study of Ruddlesden—Popper Tetragonal Sr2VO4
by Romain Viennois, David Bourgogne and Julien Haines
Crystals 2023, 13(11), 1541; https://doi.org/10.3390/cryst13111541 - 27 Oct 2023
Viewed by 819
Abstract
The lattice dynamics of tetragonal Sr2VO4 with a Ruddlesden—Popper-layered crystal structure was studied via Raman spectroscopy. We observed three of the four expected Raman-active modes under ambient conditions. Mode Grüneisen parameters and the implicit fractions of two A1g Raman-active [...] Read more.
The lattice dynamics of tetragonal Sr2VO4 with a Ruddlesden—Popper-layered crystal structure was studied via Raman spectroscopy. We observed three of the four expected Raman-active modes under ambient conditions. Mode Grüneisen parameters and the implicit fractions of two A1g Raman-active modes were determined from high-pressure and high-temperature Raman spectroscopy experiments. The low-energy A1g Raman-active mode involving Sr motions along the c direction has a large isothermal Grüneisen parameter about seven times larger than that of the high-energy A1g Raman-active mode involving apical O motions along the c direction and is, therefore, more anharmonic. The thermodynamic Grüneisen parameter is significantly smaller in Sr2VO4 than in Sr2TiO4 due to the smaller Grüneisen parameter of the high-energy A1g Raman-active mode and other vibrational modes that still need to be identified. The explicit contribution of the low-energy A1g Raman-active mode is negative, and the implicit contribution due to volume change is much larger. Both volume implicit and anharmonic explicit contributions of the high-energy A1g Raman-active mode have similar positive values. The Raman experiment in the air shows that Sr2VO4 begins to decompose above 200 °C. Full article
(This article belongs to the Special Issue Raman Scattering in Optical Crystals (Volume II))
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18 pages, 4461 KiB  
Article
Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices
by Fang Zhou, Yujing Zhao, Feiya Fu, Li Liu and Zhixin Luo
Crystals 2023, 13(10), 1506; https://doi.org/10.3390/cryst13101506 - 17 Oct 2023
Cited by 4 | Viewed by 917
Abstract
Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets [...] Read more.
Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors. Full article
(This article belongs to the Special Issue Raman Scattering in Optical Crystals (Volume II))
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11 pages, 1789 KiB  
Article
Efficient Continuous-Wave Eye-Safe Nd:GdVO4/KGW Raman Laser and Sum Frequency Generation for Deep-Red Emission
by Hsin-Jia Huang, Yu-Han Fang, Di Li, Chun-Ling Chen, Hsing-Chih Liang and Yung-Fu Chen
Crystals 2023, 13(8), 1172; https://doi.org/10.3390/cryst13081172 - 28 Jul 2023
Viewed by 881
Abstract
A concise, efficient continuous-wave eye-safe Nd:GdVO4/KGW Raman laser at 1525 nm is here demonstrated. A Nd:GdVO4 crystal was used to produce the fundamental field at 1341 nm and a KGW crystal generated the intracavity Stokes field at 1525 nm via [...] Read more.
A concise, efficient continuous-wave eye-safe Nd:GdVO4/KGW Raman laser at 1525 nm is here demonstrated. A Nd:GdVO4 crystal was used to produce the fundamental field at 1341 nm and a KGW crystal generated the intracavity Stokes field at 1525 nm via wavelength conversion of stimulated Raman scattering. The output power of the Stokes field at 1525 nm could achieve 2.1 W under the pump power of 30 W. Furthermore, two different lithium triborate (LBO) crystals with critical phase matching were exploited to obtain deep-red emission at 714 nm via the intracavity sum frequency generation of 1341 and 1525 nm waves. One cutting angle was in the XY plane and the other was in the XZ plane. The empirical thermo-optical coefficients for the LBO crystal were exploited to systematically analyze the critical phase matching conditions. Numerical results revealed that the type-I phase matching angle in the XY plane was near θ = 90° and ϕ = 3.3° at room temperature, whereas the type-I phase matching angle in the XZ plane was near θ = 86.3° and ϕ = 0° at a temperature around 47 °C. The numerical values for the optimal temperatures for the two different cutting angles were found to be in good agreement with experimental results. At the pump power of 30 W, the output power at 714 nm was approximately 2.9 W by using the LBO crystal with the cutting angle in the XY plane. On the other hand, the maximum output power at 714 nm could be up to 3.2 W under the pump power of 30 W by using the cutting angle in the XZ plane. Furthermore, the linewidth of the SFG emission was confirmed to be nearly the same for the two different cutting angles. The overall linewidth could be narrower than 0.2 nm. The developed laser at 714 nm can be useful in the exploration of ionic and atomic radium isotopes with laser spectroscopy. Full article
(This article belongs to the Special Issue Raman Scattering in Optical Crystals (Volume II))
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