Nanoelectronic Devices Based on 2D Materials

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (31 May 2021) | Viewed by 2967

Special Issue Editor


E-Mail Website
Guest Editor
Institute for Microelectronics (TU Wien) and Ioffe Institute
Interests: 2D materials; FETs with 2D channels; ultrathin insulators

Special Issue Information

Dear Colleagues,

The discovery of the electric field effect in graphene has unleashed a tremendous amount of research into the numerous 2D materials and shaped one of the most inspiring fields in modern nanoscience. The main motivation of this research consists in creating atomically thin electronic devices, which might one day revolutionize the nanoelectronics industry. In particular, realization of field-effect transistors with monolayer 2D channels should allow to overcome short-channel effects and thus extend the life of Moore’s law towards sub-5 nm channel dimensions. Additionally, thin 2D layers can be successfully applied in flexible and wearable electronics, optoelectronic devices, and sensing applications. However, bringing 2D nanoelectronic devices to the commercial market still presents a challenge, since many technological problems have not been addressed so far.

In order to summarize the most intriguing achievements in 2D device research and identify possible strategies to move forward, we invite scientists to contribute to the Special Issue on “Nanoelectronic Devices Based on 2D Materials”. This issue is intended to serve as a unique multidisciplinary forum covering broad aspects of fabrication, characterization, and modeling of various devices based on 2D materials.

The potential topics include but are not limited to:

  • Advanced fabrication techniques of FETs and other devices with 2D materials;
  • Comprehensive modeling and performance projection of 2D devices;
  • Optoelectronic devices based on 2D materials;
  • Steep-slope devices with 2D materials;
  • Electronic synapses made of 2D materials;
  • Scalable insulators for 2D FETs;
  • Reliability and stability of 2D nanoelectronic devices.

Dr. Yury Illarionov
Guest Editor

Manuscript Submission Information

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Keywords

  • 2D materials
  • Next-generation nanoelectronics
  • FETs with 2D channels
  • Optoelectronics
  • Scalable technologies
  • Ultrathin insulators
  • Extension of Moore’s law

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Published Papers (1 paper)

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Research

9 pages, 3675 KiB  
Article
Gold Nanocages as Saturable Absorbers for Passively Q-Switched Nd:YVO4 Lasers with Optimized Performance
by Bin Zhang, Xiaohan Chen, Haoyuan Li, Liwei Xu, Binghai Liu and Ping Li
Crystals 2020, 10(10), 903; https://doi.org/10.3390/cryst10100903 - 6 Oct 2020
Viewed by 2144
Abstract
Based on a gold nanocage saturable absorber (GNC-SA) with the surface plasmon resonance (SPR) absorption peak located at 1.06 μm, passively Q-switched Nd:YVO4 lasers with a center wavelength of 1064.1 nm were demonstrated. Q-switched pulses with the shortest pulse duration of 143 [...] Read more.
Based on a gold nanocage saturable absorber (GNC-SA) with the surface plasmon resonance (SPR) absorption peak located at 1.06 μm, passively Q-switched Nd:YVO4 lasers with a center wavelength of 1064.1 nm were demonstrated. Q-switched pulses with the shortest pulse duration of 143 ns and a pulse repetition rate of 467 kHz were achieved at transmittance T = 4% under a pump power of 5.98 W. Under a pump power of 3.95 W, the maximum average output power of 372 mW was obtained at a laser with transmittance of 10.8%, corresponding to an optical conversion efficiency of 9.4% and a slope efficiency of 14.1%. Our results reveal that for passively Q-switched lasers at a given wavelength, we are able to synthesize the most suitable GNC-SA to obtain the best output characteristics of lasers. Full article
(This article belongs to the Special Issue Nanoelectronic Devices Based on 2D Materials)
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