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Crystals
Special Issues
Light-Emittting Silicon Nanostructures
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Light-Emittting Silicon Nanostructures

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Inorganic Crystalline Materials".

Deadline for manuscript submissions: closed (1 February 2020)

Special Issue Editor

Dr. Kateřina Kůsová

E-Mail Website
Guest Editor
Academy of Sciences of the Czech Republic, Prague, Czech Republic
Interests: photoluminescence; nanoparticles; bandstructure engineering

Special Issue Information

Dear Colleagues,

Silicon in its various forms is an omnipresent material, being a very common element in nature as well as the cornerstone of modern electronics. The traditional view of its unsuitability for light-emission-related applications due to its indirect bandgap in the bulk crystalline form is gradually changing into a more positive approach as the quasimomentum-conservation law underlying the poor light emission of indirect semiconductor crystals has been shown to relax in quantum-confined structures. Consequently, silicon in the form of nanocrystals and other low-dimensional structures becomes a much better light emitter than its bulk counterpart.

The same properties transforming silicon into the number one material in electronics, namely its availability, environmental friendliness and low inherent toxicity, also make it a perfect candidate for photonic-based applications. Indeed, the proof-of-concept of many applications ranging from solar concentrators to fluorescent markers for long-term cellular imaging or drug-delivery nanocarriers has already been provided. Moreover, the fact that low-dimensional silicon structures still fall somewhat behind archetypal light emitters such as CdSe or GaAs in terms of both the perfection of preparation methods and the understanding of the exact influence of the structural properties on the light emission implies that they are of interest for fundamental research.

Therefore, it is my honour to invite researchers to submit their papers covering this open and rapidly evolving field of light-emitting silicon nanostructures to this Special Issue. The potential topics include, but are not limited to, the following:

  • Fabrication of light-emitting silicon nanostructures including surface-termination or encapsulation techniques
  • Photophysical properties and their correlation with structure and surface chemistry
  • Doping and emission tuning
  • Theoretical modelling of silicon nanostructures and their light emission
  • Advanced optical as well as structural characterization
  • Toxicity, biodistribution and excretion of silicon nanostructures
  • Engineering silicon nanostructures towards a specific application, ranging from photovoltaics to cellular imaging

Dr. Kateřina Kůsová
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • low-dimensional silicon
  • photoluminescence
  • fabrication methods
  • surface termination
  • light sources
  • bio-applications
  • structural characterization
  • toxicity
  • theoretical modelling

Published Papers (2 papers)

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Research

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9 pages, 1932 KiB  
Article
Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals
by Batu Ghosh and Naoto Shirahata
Crystals 2020, 10(3), 143; https://doi.org/10.3390/cryst10030143 - 25 Feb 2020
Cited by 7 | Viewed by 2584
Abstract
In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function [...] Read more.
In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated. Full article
(This article belongs to the Special Issue Light-Emittting Silicon Nanostructures)
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Review

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19 pages, 5362 KiB  
Review
Towards a Germanium and Silicon Laser: The History and the Present
by Ivan Pelant and Kateřina Kůsová
Crystals 2019, 9(12), 624; https://doi.org/10.3390/cryst9120624 - 27 Nov 2019
Cited by 7 | Viewed by 5745
Abstract
Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While [...] Read more.
Various theoretical as well as empirical considerations about how to achieve lasing between the conduction and valence bands in indirect band gap semiconductors (germanium and silicon) are reviewed, starting from the dawn of the laser epoch in the beginning of the sixties. While in Ge the room-temperature lasing under electrical pumping has recently been achieved, in Si this objective remains still illusory. The necessity of applying a slightly different approach in Si as opposed to Ge is stressed. Recent advances in the field are discussed, based in particular on light-emitting Si quantum dots. Full article
(This article belongs to the Special Issue Light-Emittting Silicon Nanostructures)
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