Search for Articles:
Title / Keyword
Author / Affiliation / Email
Journal
Article Type
 
 
Advanced Search
 
Section
Special Issue
Volume
Issue
Number
Page
 
3.6
2.7
Journals
Crystals
Special Issues
Defects in Wide Bandgap Semiconductors
share announcement

Defects in Wide Bandgap Semiconductors

A special issue of Crystals (ISSN 2073-4352). This special issue belongs to the section "Crystalline Metals and Alloys".

Deadline for manuscript submissions: closed (15 September 2021) | Viewed by 7800

Special Issue Editors

Prof. Devki N. Talwar

E-Mail Website
Guest Editor
Department of Physics, University of North Florida, Jacksonville, FL 32224-7699, USA
Interests: II-VI (ZnO, Ga2O3); AlGaN; SiC; diamond
Dr. Sudhiranjan Tripathy

E-Mail Website
Guest Editor
Institute of Materials Research and Engineering, A*STAR , Singapore 138634, Singapore
Interests: compound semiconductors; gallium nitride; silicon carbide; wide bandgap power devices; RF electronics; optical spectroscopy

Special Issue Information

Dear Colleagues,

Wide bandgap (WBG) materials represent an exciting and challenging area of research due to their inherent physical properties—valuable to design diverse range of detectors for optical communications and higher breakdown voltages for energy needs. Defects in WBG are either present in starting materials and/or generated during device processing. In this Special issue, we are inviting experts to share their research to comprehend the evidence of the role played by defects on device performance, manufacturing yield, and long-term field-reliability, especially when devices are operating under extreme stressful environments.

Prof. Devki N. Talwar
Dr. Sudhiranjan Tripathy
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Crystals is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • HVPE; dry etch; selective epitaxy; semipolar and non-polar GaN planes; dislocations; growth; characterization; electron channeling contrast imaging
  • silicon carbide; point defect; carbon vacancy; excited state; high carrier injection; high voltage switching; avalanche energy; performance; reliability; basal plane dislocations; ultraviolet photoluminescence imaging; UVPL
  • Ga2O3:Nb; optical floating zone method; optical properties; electronic energy band
  • defects; semiconductors; power electronics; wide bandgap; R&D investment; workforce development
  •  AlN; GaN; HVPE; structural defects; impurities; self-compensation
  • 4H-SiC MOSFET; passivation; hole trap; bias–temperature instability; oxygen vacancy; carbon interstitial; MOSFET; reliability; oxide traps; defects; VT Instability
  • surface kinetics; surface morphology; computational fluid dynamics; kinetic Monte Carlo; sensitivity analysis

Published Papers (3 papers)

Download All Papers
Order results
Result details
Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:

Research

Jump to: Review

20 pages, 7221 KiB  
Article
Indium Ammoniates from Ammonothermal Synthesis: InAlF6(NH3)2, [In(NH3)6][AlF6], and [In2F(NH3)10]2[SiF6]5 ∙ 2 NH3
by Peter Becker, Toni Boris Cekovski and Rainer Niewa
Crystals 2021, 11(6), 679; https://doi.org/10.3390/cryst11060679 - 13 Jun 2021
Cited by 3 | Viewed by 1984
Abstract
The ammonothermal synthesis of three ammoniates of indium, namely InAlF6(NH3)2, [In(NH3)6][AlF6], and [In2F(NH3)10]2[SiF6]5 ∙ 2 NH3 was successful from [...] Read more.
The ammonothermal synthesis of three ammoniates of indium, namely InAlF6(NH3)2, [In(NH3)6][AlF6], and [In2F(NH3)10]2[SiF6]5 ∙ 2 NH3 was successful from near-ammononeutral conditions in the presence of fluoride ions. Initially, all these compounds were obtained upon corrosion of the applied liner and crucible material Si3N4, which also contains small amounts of aluminum. The syntheses were performed in supercritical ammonia (T = 753 K, p up to 307 MPa). The crystal structures were solved and refined from single crystal X-ray diffraction intensity data. InAlF6(NH3)2 crystallizes as a typical layer-type structure with corner-sharing [InF4(NH3)2]– and [AlF6]3− octahedra. [In(NH3)6][AlF6] features isolated [In(NH3)6]3+ and [AlF6]3− octahedra. The crystal structure of [In2F(NH3)10]2[SiF6]5 ∙ 2 NH3 contains [(NH3)5In–F–In(NH3)5]5+ octahedra doubles next to [SiF6]2− octahedra and ammonia molecules. All intermediates have strong hydrogen bonding systems. The results from vibrational spectroscopy are reported. Full article
(This article belongs to the Special Issue Defects in Wide Bandgap Semiconductors)
►▼ Show Figures

Figure 1

10 pages, 1970 KiB  
Article
Synthesis and Characterization of Ammonium Potassium Tellurium Polyoxomolybdate: (NH4)2K2TeMo6O22·2H2O with One-Dimensional Anionic Polymeric Chain [TeMo6O22]4−
by Lei Geng and Yunjian Wang
Crystals 2021, 11(4), 375; https://doi.org/10.3390/cryst11040375 - 03 Apr 2021
Cited by 2 | Viewed by 1867
Abstract
A new tellurium polyoxomolybdate hydrate (NH4)2K2TeMo6O22·2H2O was synthesized via the hydrothermal reaction method at 190 °C. The compound crystallizes in a one-dimensional tellurium polymolybdate [TeMo6O22]4− chain [...] Read more.
A new tellurium polyoxomolybdate hydrate (NH4)2K2TeMo6O22·2H2O was synthesized via the hydrothermal reaction method at 190 °C. The compound crystallizes in a one-dimensional tellurium polymolybdate [TeMo6O22]4− chain structure. The anionic polymeric chain is composed of Mo6O22 hexamers bridged together through sharing four corner oxygen atoms on the electron lone-paired TeO4 group. The Mo6O22 hexamer cluster is assembled from six distorted MoO6 octahedra in an edge-sharing manner. The ammonium and potassium cations distribute around the [TeMo6O22]4− chains and separate them from each other and maintain the charge balance. The thermal stability and optical properties of the compound were also investigated. The optical absorption data reveal that the compound is a wide band semiconductor with an optical band gap of 3.4 eV. Full article
(This article belongs to the Special Issue Defects in Wide Bandgap Semiconductors)
►▼ Show Figures

Figure 1

Review

Jump to: Research

18 pages, 3268 KiB  
Review
Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
by Nethala Manikanthababu, Hardhyan Sheoran, Pradeep Siddham and Rajendra Singh
Crystals 2022, 12(7), 1009; https://doi.org/10.3390/cryst12071009 - 21 Jul 2022
Cited by 14 | Viewed by 3144
Abstract
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range of compelling applications in power electronics. In this review, we have explored the available radiations in the atmosphere and the effects of radiation on the β-Ga [...] Read more.
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide range of compelling applications in power electronics. In this review, we have explored the available radiations in the atmosphere and the effects of radiation on the β-Ga2O3 material and devices. The focus in this review summarizes various studies covering different radiation such as swift heavy ions, protons, neutrons, electrons, Gamma, and X-rays to understand the radiation-induced effects on the structure and their reliable performance in harsh environments. In addition, we focused on the various pre-existing defects in β-Ga2O3 and the emergence of radiation-induced defects that provoke a severe concern, especially from the device performance point of view. This review presents the irradiation-induced effects on the devices such as high-power devices such as Schottky barrier diodes (SBDs), field-effect transistors (FETs), metal-oxide-semiconductor (MOS) devices, and photodetectors. Some key studies including the changes in carrier concentration with a removal rate, Schottky barrier height (SBH), ideality factor, defect dynamics dielectric damage, interface charge trapping, a thermally activated recovery mechanism for charge carriers at elevated temperature, and diffusion length of minority charge carriers. These reports show that β-Ga2O3-based devices could be deployable for space or high-radiation terrestrial applications. These results provide/suggest a better device design based on the radiation degradation studies in the state-of-the-art β-Ga2O3 devices. Full article
(This article belongs to the Special Issue Defects in Wide Bandgap Semiconductors)
►▼ Show Figures

Figure 1

Show export options expand_more Show export options expand_less
Select all
Export citation of selected articles as:
 
Displaying articles 1-3
Back to TopTop