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Physics of Electronics: From Materials to Modern Semiconductor Devices
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Physics of Electronics: From Materials to Modern Semiconductor Devices

A special issue of Applied Sciences (ISSN 2076-3417). This special issue belongs to the section "Materials Science and Engineering".

Deadline for manuscript submissions: closed (30 June 2023) | Viewed by 2071

Special Issue Editors

Prof. Dr. Supriyo Bandyopadhyay

E-Mail Website
Guest Editor
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA 23173, USA
Interests: spintronics; straintronics; nanoelectronics
Special Issues, Collections and Topics in MDPI journals
Prof. Dr. Samit Ray

E-Mail Website
Guest Editor
Department of Physics, Indian Institute of Technology Kharagpur, Kharagpur, India
Interests: semiconductor quantum and heterostructures for nanoscale electronic and photonic devices

Special Issue Information

Dear Colleagues,

A electronics technology matures, it embraces advances in device design and materials. Device-material co-design is now the norm and modern devices increasingly incorporate new materials such as 2D materials (graphene, transition metal chalcogenides), topological insulators, van der Waal’s heterostructures, Weyl semimetals, multiferroics, ferroelectrics, dilute magnetic semiconductors, etc. This special issue seeks trend setting papers in device ideas embracing not just novel materials, but also traditional silicon and other semiconductors, as well as organic thin films.

Papers are solicited in areas of

  • Ultrafast and ultra-low-power electronic and photonic devices employing semiconductors
  • Non-volatile devices for Processor-in-Memory architectures
  • Multifunctional devices
  • Devices built with 2D materials
  • Devices incorporating topological insulators and/or Weyl semimetals
  • Magnetic/spintronic devices based on multiferroics or dilute magnetic semiconductors
  • Ferroelectric and/or antiferroelectric devices

Prof. Dr. Supriyo Bandyopadhyay
Prof. Dr. Samit Ray
Guest Editors

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Keywords

  • semiconductor devices for beyond Moore's law
  • ultrafast, ultrasmall and ultralow power semiconductor devices for electronics and photonics
  • 2D Material based devices
  • devices based on topological insulators and/or Weyl semimetals
  • non-volatile devices built with multiferroics, semiconductors, ferroelectrics, antiferroelectrics, magnets and antiferromagnets

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Published Papers (1 paper)

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Research

12 pages, 2048 KiB  
Article
Absence of Weak Localization Effects in Strontium Ferromolybdate
by Gunnar Suchaneck and Evgenii Artiukh
Appl. Sci. 2023, 13(12), 7096; https://doi.org/10.3390/app13127096 - 13 Jun 2023
Cited by 1 | Viewed by 1579
Abstract
Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications, since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K and a low-field magnetoresistance (LFMR). The magnetic, resistive and [...] Read more.
Sr2FeMoO6-δ (SFMO) double perovskite is a promising candidate for room-temperature spintronic applications, since it possesses a half-metallic character (with theoretically 100% spin polarization), a high Curie temperature of about 415 K and a low-field magnetoresistance (LFMR). The magnetic, resistive and catalytic properties of the double perovskite SFMO are excellent for spintronic (non-volatile memory), sensing, fuel cell and microwave absorber applications. However, due to different synthesis conditions of ceramics and thin films, different mechanisms of electrical conductivity and magnetoresistance prevail. In this work, we consider the occurrence of a weak localization effect in SFMO commonly obtained in disordered metallic or semiconducting systems at very low temperatures due to quantum interference of backscattered electrons. We calculate the quantum corrections to conductivity and the contribution of electron scattering to the resistivity of SFMO. We attribute the temperature dependence of SFMO ceramic resistivity in the absence of a magnetic field to the fluctuation-induced tunneling model. We also attribute the decreasing resistivity in the temperature range from 409 K to 590 K to adiabatic small polaron hopping and not to localization effects. Neither fluctuation-induced tunneling nor adiabatic small polaron hopping favors quantum interference. Additionally, we demonstrate that the resistivity upturn behavior of SFMO cannot be explained by weak localization. Here, the fitted model parameters have no physically meaningful values, i.e., the fitted weak localization coefficient (B′) was three orders of magnitude lower than the theoretical coefficient, while the fitted exponent (n) of the electron–electron interaction term (CnTn) could not be assigned to a specific electron-scattering mechanism. Consequently, to the best of our knowledge, there is still no convincing evidence for the presence of weak localization in SFMO. Full article
(This article belongs to the Special Issue Physics of Electronics: From Materials to Modern Semiconductor Devices)
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